ISMET Search Results

E326295

Abstract: XPGWHT-L1-0000-00H51 114R2 led XP-G CLD-DS20
Contextual Info: Cree XLamp® XP-G LEDs Data Sheet The XLamp XP-G LED delivers unprecedented levels of light output and efficacy for a single die LED. The XLamp XP-G LED continues Cree’s history of innovation in LEDs for lighting applications with wide viewing angle, symmetrical package, unlimited floor life

Contextual Info: T M S 551 60, T M S 551 61, T M S 551 70, T M S 5 5 1 71 2 6 21 44 BY 16-BIT M U L T IP O R T VIDEO RAMS S M V S 4 6 4 -MARCHI 996 + Organization: • 1 DRAM: 262144 Words S A M : 256 W o r d s • • x 16 B i t s D a t a f ro m t h e D R A M to O n e - H a l f o f t he

Contextual Info: 16Mb: x16 SDRAM M IC R O N I TECHNOLOGY, INC. M T 4 8 L C 1 M 1 6 A 1 S - 5 1 2 K X 16 X 2 b a n k s SYNCHRONOUS DRAM F or the la te st full-length data sheet, please re fe r to the M icron Web site : www. m icron, com /m ti/m sp/htm l/datasheet. htm ! FEATURES

DQ131

Abstract: MT48LC16M16A2TG8E
Contextual Info: ADVANCE M IC R O N * I 2 56 M b : xV TCCHW LOOY.INC. SYNCHRONOUS DRAM nV ,1,5 SD R A M MT48LC64M4A2 - 16 Meg x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks For the latest data sh ee t revisions, p le a s e refer to the Micron

Contextual Info: M il“ C a a iS J I L IL z 64Mb: x4, x8, x16 SDRAM M T48LC16M 4A2 -4 Meg x 4 x 4 banks M T48LC 8M 8A 2- 2 Meg x 8 x 4 banks M T48LC4M 16A2 -1 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest data sheet, please refer to the Micron Web site: www,micron.com/mti/msp/html/datasheet.html

Contextual Info: HY5RS123235FP 512M 16Mx32 GDDR3 SDRAM HY5RS123235FP Revision 1.1 This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

48LC2M8A1

Abstract: 16Mb SDRAM MICRON
Contextual Info: MICRON I 1 6 MEG: x4, x8 SDRAM TOtWOLOGT, INC. M T 4 8 L C 4 M 4 A 1 /A 2 S - 2 M e g x 4 x 2 b a n k s M T 4 8 L C 2 M 8 A 1 /A 2 S - 1 M e g x 8 x 2 b a n k s SYNCHRONOUS DRAM FEATURES PIN A S S I G N M E N T Top View * PCI 00-com pliant, includes CONCURRENT AUTO

marking code KJJ

Contextual Info: ADVANCE 1 28 MEG: x4, x8, x1 6 SDRAM MT48LC32M4A1/A2 -8 Meg x 4 x 4 banks MT48LC16M8A1/A2-4 Meg x 8 x 4 banks MT48LC8M16A1/A2 -2 Meg x 16 x 4 banks SYNCHRONOUS DRAM FEATURES PIN A S S I G N M E N T Top View * PCI 00-com pliant, in clu d es CONCURRENT AUTO

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

HY5RS123235

Abstract: CLAMSHELL HYNIX and zq A2K1 136ball GDDR3 SDRAM 256Mb HY5RS123235FP nanya ba1g
Contextual Info: HY5RS123235FP 512M 16Mx32 GDDR3 SDRAM HY5RS123235FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

C4003

Abstract: amp 822153 C0623
Contextual Info: - ee- AO Diaf 53 LT * M K * I» T I< M »!rr T " REVISÉO PER 0030-0018-96 A HOUSING-MATERIAL i LIQUID-CRYSTAL-POLYMER. & CONTACT-MATERIAL i PH05. BRONZE. A LA TCH-MATERIAL . BRASS, A C O N T A C T - P L A T E 0.00127 ALL OVER. NICKEL PLATE. C.0000503 MIN NICKEL

Contextual Info: PRELIMINARY 128Mb: x4, x8, x16 SDRAM MICRON' I TECHNOLOGY, INC. M T48LC32M 4A2 - 8 Meg x 4 x 4 banks M T48LC16M 8A2 - 4 Meg x 8 x 4 banks M T48LC8M 16A2 - 2 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest full-length data sheet, please refer to the Micron

Contextual Info: ADVANCE MICRON' I 256M b:X\ * 8 , X 1 6 TCCHWLOOY.INC. S D R A I V I MT48LC64M4A2 - 1 6 M e g x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest data sheet revisions, please refer to the Micron

Contextual Info: ADVANCE 64Mb: x32 SDRAM MICRON8 I TEOWOLOOV, INC. SYNCHRONOUS DRAM MT48LC2M32B1 - 2 Meg x 32 x 4 banks F o r the late st data sheet revisions, plea se re fe r to the Micron Web site: w w w .m icron.com /m ti/m sp/htm l/datasheet.htm l FEATURES • PC I00-com pliant; includes CONCURRENT AUTO

HY5RS123235

Abstract: ELPIDA DDR User BA2-H10
Contextual Info: HY5RS123235F 512M 16Mx32 GDDR3 SDRAM HY5RS123235F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.

PC133 registered reference design

Contextual Info: M l^ n n N I L IL z 64Mb: x4, x8, x16 SDRAM MT48LC16M4A2-4 Meg x 4 x 4 banks MT48LC8M8A2 - 2 Meg x 8 x 4 banks MT48LC4M16A2 -1 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest full-length data sheet, please refer to the Micron Web site: www.m icron.com/mti/m sp/htm l/datasheet.htm l

Contextual Info: 16“b:x16 MICRON' I TCCHWLOOY.INC. S SYNCHRONOUS DRAM M T 4 8 L C 1 M 1 6 A 1 - 5 1 2 K X 16 X 2 R A I V I b a n ks F o r the late st data sheet revisions, plea se re fe r to the Micron Web site: w w w .m icron.com /m ti/m sp/htm l/datasheet.htm l FEATURES

Contextual Info: ADVANCE 128 MEG: x4, x8, x16 SDRAM MICRON I TECHNOLOGY, INC. SYNCHRONOUS DRAM MT48LC32M4A1 /A2 - 8 Meg x 4 x 4 banks MT48LC16M8A1 /A2 -4 Meg x 8 x 4 banks MT48LC8M16A1/A2 -2 Meg x 16 x 4 banks FEATURES • PCIOO-compliant, includes CONCURRENT AUTO PRECHARGE

Contextual Info: 16 M E G :x4,x8 MICRON I TECHNOLOGY, INC. Q FEATURES 44-Pin TSOP x4 NC DQ0 NC DQ1 - MARKING 4M 4 2M 8 - - • W RITE Recovery OWR/tDPL *WR = 1 CLK *WR = 2 CLK C on tact facto ry for availability.) Al A2 • Plastic Package - OCPL 44-pin TSOP (400 mil) Note:

Contextual Info: 64M b:xV n a,xi6 MICRON' I TCCHWLOOY.INC. S D R A I V I MT48LC16M4A2 - 4 Meg x 4 x 4 banks MT48LC8M8A2 - 2 Meg x 8 x 4 banks MT48LC4M16A2 - 1 Meg x 16x 4 banks SYNCHRONOUS DRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html

Contextual Info: 64 M E G :X 4e X nnX A M MICRON I TECHNOLOGY, INC. Q ^ ^ jy j MT48LC16M4A1 /A2 -4 Meg x 4 x 4 banks MT48LC8M8A1/A2 - 2 Meg x 8 x 4 banks MT48LC4M16A1/A2 -1 Meg x 16 x 4 banks SYNCHRONOUS DRAM FEATURES • PCIOO-compliant, includes CONCURRENT AUTO PRECHARGE

Contextual Info: 2SÔ*lbb2 ODDTÎbQ bIT «CVP b5E ]> CY7B134 CYPRESS SEMICONDUCTOR CY7B135 _ CY7B1342 Features Functional Description 0.8-micron BiCMOS for high performance High-speed access — 20 ns commercial — 25 ns (military) Automatic power-down

Contextual Info: HY5RS123235FP 512M 16Mx32 GDDR3 SDRAM HY5RS123235FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HY5RS123235FP 512M 16Mx32 GDDR3 SDRAM HY5RS123235FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.