ISO9000 INVERTER Search Results

high voltage current mirror

Abstract: RBS 2111 HIP5600 "high voltage current mirror" irf450 mosfet drive circuit diagram Automatic voltage regulator RBS HIP2500 1N4000 1N5622 HIP5500
Contextual Info: Application Note 9335 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without

Y5 smd

Abstract: y6 smd transistor ACS04MS "silicon on sapphire" cmos SENSOR 15um SMD TRANSISTOR Y1 smd transistor y5 y4 smd transistor ACS04DMSR-03 ACS04HMSR-03
Contextual Info: ACS04MS Data Sheet November 1998 File Number Radiation Hardened Hex Inverter Features The Radiation Hardened ACS04MS is a Hex Inverter. This device simply inverts the level present on each input. All inputs are buffered and the outputs are designed for balanced propagation delay and transition times.

AN9105

Abstract: SCHEMATIC POWER SUPPLY WITH IGBTS inverter 3kw schematic 3kw inverter GS601 RUR860 SP601 half-bridge converter 230vac to 30vdc transformer half-bridge switching gate driver
Contextual Info: HVIC/IGBT Half-Bridge Converter Evaluation Circuit Application Note May 1992 AN9105.1 Author: George Danz The HVIC high voltage integrated circuit is designed to drive n-channel IGBTs or MOSFETs in a half-bridge configuration up to 500VDC. Power supply and motor control inverters can

iso9000 inverter

Abstract: y6 smd transistor 5962F9671201VCC 5962F9671201VXC ACTS04HMSR ACTS04MS
Contextual Info: ACTS04MS Radiation Hardened Hex Inverter January 1996 Features Pinouts • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96712 and Intersil’s QM Plan 14 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835

y4 smd

Abstract: 5962F9860201V9A 5962F9860201VCC 5962F9860201VXC ACS05DMSR-03 ACS05MS
Contextual Info: ACS05MS Data Sheet Radiation Hardened Hex Inverter with Open Drain Outputs The Radiation Hardened ACS05MS is a Hex Inverter with open drain outputs. This device inverts a HIGH level on each input to a LOW level on the corresponding Y output. A LOW level on the input causes the corresponding Y output to enter

IC 7585

Abstract: y6 smd transistor 5962F9671201VCC 5962F9671201VXC ACTS04HMSR ACTS04MS
Contextual Info: ACTS04MS TM Radiation Hardened Hex Inverter January 1996 tle TS S ia- Features Pinouts • Devices QML Qualified in Accordance with MIL-PRF-38535 • Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96712 and Intersil’s QM Plan

FDD6637-F085

Contextual Info: FDD6637_F085 P-Channel PowerTrench MOSFET -35V, -21A, 18mΩ Features Applications „ Typ rDS on = 9.7mΩ at VGS = -10V, ID =- 14A „ Inverter „ Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A „ Power Supplies „ Typ Qg(10) = 45nC at VGS = -10V „ „ High performance trench technology for extremely low

FDD4685

Abstract: 84A2
Contextual Info: FDD4685_F085 P-Channel PowerTrench MOSFET -40V, -32A, 35mΩ Features Applications „ Typ rDS on = 23mΩ at VGS = -10V, ID = -8.4A „ Inverter „ Typ rDS(on) = 30mΩ at VGS = -4.5V, ID = -7A „ Power Supplies „ Typ Qg(TOT) = 19nC at VGS = -5V „ High performance trench technology for extremely low

FDD4243

Abstract: FDD4243-F085
Contextual Info: FDD4243_F085 P-Channel PowerTrench MOSFET -40V, -14A, 64mΩ Features Applications „ Typ rDS on = 36mΩ at VGS = -10V, ID = -6.7A „ Inverter „ Typ rDS(on) = 48mΩ at VGS = -4.5V, ID = -5.5A „ Power Supplies „ Typ Qg(TOT) = 21nC at VGS = -10V „ High performance trench technology for extremely low

Contextual Info: FDD8447L_F085 N-Channel PowerTrench MOSFET 40V, 50A, 11.0mΩ Features Applications ̈ Typ rDS on = 7.0mΩ at VGS = 10V, ID = 14A ̈ Inverter ̈ Typ rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 11A ̈ Power Supplies ̈ Fast Switching ̈ Automotive Engine Control

FDD8447L

Abstract: FDD8447L-F085 fdd*8447l N-Channel 40V MOSFET FDD8447
Contextual Info: FDD8447L_F085 N-Channel PowerTrench MOSFET 40V, 50A, 11.0mΩ Features Applications „ Typ rDS on = 7.0mΩ at VGS = 10V, ID = 14A „ Inverter „ Typ rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 11A „ Power Supplies „ Fast Switching „ Automotive Engine Control

Contextual Info: FDD4685_F085 P-Channel PowerTrench MOSFET -40V, -32A, 35mΩ Features Applications ̈ Typ rDS on = 23mΩ at VGS = -10V, ID = -8.4A ̈ Inverter ̈ Typ rDS(on) = 30mΩ at VGS = -4.5V, ID = -7A ̈ Power Supplies ̈ Typ Qg(TOT) = 19nC at VGS = -5V ̈ High performance trench technology for extremely low

Contextual Info: FDD4243_F085 P-Channel PowerTrench MOSFET -40V, -14A, 64mΩ Features Applications ̈ Typ rDS on = 36mΩ at VGS = -10V, ID = -6.7A ̈ Inverter ̈ Typ rDS(on) = 48mΩ at VGS = -4.5V, ID = -5.5A ̈ Power Supplies ̈ Typ Qg(TOT) = 21nC at VGS = -10V ̈ High performance trench technology for extremely low

Contextual Info: FDD6637_F085 P-Channel PowerTrench MOSFET -35V, -21A, 18mΩ Features Applications ̈ Typ rDS on = 9.7mΩ at VGS = -10V, ID =- 14A ̈ Inverter ̈ Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A ̈ Power Supplies ̈ Typ Qg(10) = 45nC at VGS = -10V ̈ ̈ High performance trench technology for extremely low

AN9860

Contextual Info: The Importance of the Free Wheeling Diode Application Note October 1999 AN9860 Authors: Sampat Shekhawat, Jon Gladish, Praveen Shenoy, and Barry Wood In full-bridge inverters and DC to DC power supply circuits, the Free Wheeling Diode FWD reverse recovery current and

HCTS04D

Abstract: irlml 4015m HCTS04HMSR HCTS04K HCTS04KMSR HCTS04MS HCTS04DMSR
Contextual Info: HCTS04MS TM Radiation Hardened Hex Inverter August 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg

CD74HC04

Abstract: 74HCT 74LS CD54HC04 CD54HCT04 CD74HC04E CD74HC04M CD74HCT04 CD74HCT04E CD74HCT04M
Contextual Info: CD54HC04, CD54HCT04, CD74HC04, CD74HCT04 S E M I C O N D U C T O R High Speed CMOS Logic Hex Inverter August 1997 Features Description • Buffered Inputs The Harris CD54HC04, CD54HCT04, CD74HC04 and CD74HCT04 logic gates utilize silicon gate CMOS technology to achieve operating speeds similar to LSTTL gates with

MAX828

Abstract: TB379 ICL828 ICL828IH-T
Contextual Info: ICL828 TM Data Sheet June 2000 Switched-Capacitor Voltage Inverter Features The ICL828 IC performs supply voltage conversions from positive to negative for an input range of +1.5V to +5.5V resulting in complementary output voltages of -1.5V to -5.5V. The ICL828 has a 12kHz internal oscillator and requires two

ICL828

Abstract: ICL828IH-T MAX828 TB379
Contextual Info: ICL828 TM Data Sheet June 2000 Switched-Capacitor Voltage Inverter Features The ICL828 IC performs supply voltage conversions from positive to negative for an input range of +1.5V to +5.5V resulting in complementary output voltages of -1.5V to -5.5V. The ICL828 has a 12kHz internal oscillator and requires two

HCS05D

Abstract: HCS05DMSR HCS05HMSR HCS05K HCS05KMSR HCS05MS
Contextual Info: HCS05MS Radiation Hardened Hex Inverter with Open Drain September 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si)

HCS04D

Abstract: HCS04DMSR HCS04HMSR HCS04K HCS04KMSR HCS04MS
Contextual Info: HCS04MS Radiation Hardened Hex Inverter August 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg

IRLM6302

Abstract: HFA3925 AM79C930 AN9812 ICL7660 MMBT2222 MMBT2907 QA transistor PCMCIA Design
Contextual Info: Elimination of Transient Start-Up Logic State in PRISM 2.4GHz Direct Sequence Reference Radio Application Note July 1998 AN9812 Author: Richard L. Abrahams Introduction This Application Note describes circuitry to eliminate a transient start-up logic state in the AMD AM79C930

HCS04D

Abstract: HCS04DMSR HCS04HMSR HCS04K HCS04KMSR HCS04MS
Contextual Info: HCS04MS Radiation Hardened Hex Inverter August 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg

HCTS04D

Abstract: HCTS04DMSR HCTS04HMSR HCTS04K HCTS04KMSR HCTS04MS
Contextual Info: HCTS04MS Radiation Hardened Hex Inverter August 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg