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    ISS226

    Abstract: ISS184 ISV128 fet 2sK161 Low frequency amplifier ISV99 2SK117 2SK30ATM 2sk241 mos fet ISS181
    Contextual Info: Sb TOSHIBA íDISCRET E/O PTO> 9097250 '•i, D I S C R E T E / OPTO _ 5bC TOSHIBA Di f1| c] 0 ci 7 e S D 07 103 □□□71D3 D 0 3 - ° ^ .c; . V FET - _ A p plication Typ e Low frequency amplifier Low noise low 2SK 209 frequency amplifier FM R F


    OCR Scan     		1017ESD DDD71G3 2SK208 2SK30ATM 2SK209 2SK117 2SK210 2SK192A 2SK211 2SK161 ISS226 ISS184 ISV128 fet 2sK161 Low frequency amplifier ISV99 2SK117 2SK30ATM 2sk241 mos fet ISS181 PDF

    ISS184

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS184 Switching Diode SOT-23 FEATURES y Low forward voltage : VF 3 =0.9V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1.ANODE MARKING: B3 2. ANODE 3. CATHODE Maximum Ratings @TA=25℃


    Original     		OT-23 1SS184 OT-23 100mA ISS184 ISS184 PDF

    ISS184

    Abstract: MARKING b3 MARKING B3 SOT-23 1SS184
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS184 Switching DIODES SOT-23 FEATURES y Low forward voltage : VF 3 =0.9V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1.ANODE MARKING: B3 2. ANODE 3. CATHODE Maximum Ratings @TA=25℃


    Original     		OT-23 1SS184 OT-23 100mA ISS184 ISS184 MARKING b3 MARKING B3 SOT-23 1SS184 PDF