ISSI 543 Search Results

cp019

Abstract: CP019-1B ISSI 614 7306-11 86038-8
Contextual Info: ISSI REPRESENTATIVES Integrated Silicon Solution, Inc. ISSI Regional Sales Offices Headquarters 800-379-4774 Tel. 408-588-0806 Fax Northeast Office 603-594-4176 Tel. 603-594-4181 Fax Central Office 972-488-9691 Tel. 972-488-9690 Fax West Coast Office Europe Office

Contextual Info: 2 2 issi W hat HEWLETT mL'Hm P a ck a rd Silicon Bipolar Monolithic Variable Gain Amplifier Technical Data HPVA-0180 Features • 3 dB Bandwidth: DC to 2.5 GHz • Temperature Compensated Bias • Single Ended or Differential Operation • Low Cost Plastic Surface

Contextual Info: ISSI IS27HC512 65,536 x 8 HIGH-SPEED CMOS EPROM FEATURES DESCRIPTION • Fast access time: 45 ns The IS S IIS27HC512 is an ultra-high-speed 512K-bit Ultravio­ let Erasable CMOS Programmable Read-Only Memory. It utilizes the standard JEDEC pinout making it functionally

ISSI 543

Contextual Info: ISSI I S 2 7 H C 5 1 2 65,536 X 8 HIGH-SPEED CMOS EPROM FEATURES DESCRIPTION • Fast access time: 45 ns The IS S IIS27HC512 is an ultra-high-speed 512K-bit Ultravio­ let Erasable CMOS Programmable Read-Only Memory. It utilizes the standard JEDEC pinout making it functionally

BC723

Abstract: 56800E DSP56852UM 56800e OCMDR View Sonic lcd monitor power supply circuit diagram 56F800E reference manual 7914 freescale superflash
Contextual Info: 56852 User Manual 56852 Digitial Signal Controller 12 13 14 15 16 DSP56852UM Rev. 4 06/2005 freescale.com 17 18 This manual is one of a set of three documents. For complete product information, it is necessary to have all three documents. They are: 56800E Reference Manual, 56852 User Manual, and

Contextual Info: 64K x 32 SYNCHRONOUS PIPELINE STATIC RAM PRELIMINARY JUNE 1997 FEATURES DESCRIPTION • Internal self-timed write cycle The ISSIIS61S6432 is a high-speed, low-power synchronous static RAM designed to provide a burstable, high-perfor­ mance, secondary cache for the Pentium , 680X0™, and

JTAG 2mm

Abstract: 56800E CS4218 DSP56800E DSP56852 DSP56852EVMUM jack p4 2.1mm CR1243
Contextual Info: 56852 Evaluation Module User Manual 56F850 16-bit Digital Signal Controllers DSP56852EVMUM Rev. 3 07/2005 freescale.com TABLE OF CONTENTS Preface vii Chapter 1 Introduction 1.1 1.2 1.3 56852EVM Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-1

transistor bf 458

Abstract: transistor bf458 transistor bf 459
Contextual Info: 25C D • fl235b as 00044^5 T H S IE 6 ' rBF 457 BF 458 BF 459 NPN Silicon RF Transistors _"'-5C 0 4 4 9 5 SIE M E N S A K T IEN G ESE LLSC H A F for video and AF output stages BF 457, BF 4 58 and BF 4 5 9 are epitaxial NPN silicon planar transistors in TO 126 plastic

Contextual Info: MODEL IMS-2 Inductors M ilitary, M IL-C-15305 Qualified, Type LT and Com m ercial, Molded, Shielded, M iniature FEATURES • Flame retardant coating • Electromagnetic shield Epoxy molded construction provides superior moisture protection • Small package for a

IS31LT3380

Abstract: 31LT3380 100603-01 PAR/MR11
Contextual Info: IS31LT3380 40V/1.2A LED DRIVER WITH SWITCH DIMMING OCTOBER 2011 GENERAL DESCRIPTION The IS31LT3380 is a continuous mode inductive step-down converter, designed for driving a single LED or multiple series connected LEDs efficiently from a voltage source higher than the LED voltage. The chip operates

PAR/MR11

Contextual Info: IS31LT3380 40V/1.2A LED DRIVER WITH SWITCH DIMMING OCTOBER 2011 GENERAL DESCRIPTION The IS31LT3380 is a continuous mode inductive step-down converter, designed for driving a single LED or multiple series connected LEDs efficiently from a voltage source higher than the LED voltage. The chip operates

PAR/MR11

Contextual Info: IS31LT3360 40V/1.2A LED DRIVER WITH INTERNAL SWITCH GENERAL DESCRIPTION The IS31LT3360 is a continuous mode inductive step-down converter, designed for driving a single LED or multiple series connected LEDs efficiently from a voltage source higher than the LED voltage. The chip operates

Contextual Info: SA MS UNG E L E C T R O N I C S INC 42E D Bi 0011103 1 BSflGK PRELIMINARY KM23C16000FP CMOS MASK ROM 16M-Bit 2M X8/1M X16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization 2,097,152 x 8 (byte mode) 1,048,576 x 16 (word mode) • Fast access time: 150ns (max.)

IS31LT3360

Abstract: PAR/MR11
Contextual Info: IS31LT3360 40V/1.2A LED DRIVER WITH INTERNAL SWITCH GENERAL DESCRIPTION The IS31LT3360 is a continuous mode inductive step-down converter, designed for driving a single LED or multiple series connected LEDs efficiently from a voltage source higher than the LED voltage. The chip operates

8464a

Abstract: MB8464A-10-W heme LC mb8464a
Contextual Info: October 1989 Edition 1.0 F u jrrs u DATA SHEET MB8464A-10-w/-15-w CMOS 64K-BIT LOW POWER SRAM 8,192WORDS x 8BIT CMOS STATIC RAM WITH LOW POWER AND DATA RETENTION The Fujitsu MB8464A Is a 8 192-word by 8-bit static random access memory fabricated with a CMOS silicon gate process. The memory utilizes asynchronous circuitry and may be

Contextual Info: 5KP SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE 5.0 to 200 Volts PEAK PULSE POWER 5000 Watts P-600 Unit: inch mm FEATURES 1.0(25.4)MIN. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • 5000W Peak Pulse Power capability at on 10/1000µs waveform

MB8464A-10

Abstract: fujitsu mb8464a MB8464A MB8464 fujitsu 1988 777T7
Contextual Info: FUJITSU MICROELECTRONICS 47E D 37^7^2 DDlöRHS T • F U I cP April 1990 Edition 3.0 FUJITSU DATA SHEET MB8464A-80/-80U-80LL/-10/-10U-1OLL/-15/- 15U-15LL CMOS 64K BIT LOW POWER SRAM 8K Words x 8 Bits CMOS Static RAM with Low Power and Data Retention The Fujitsu MB8464A is a 8,192 words x 8 bits static random access memory

Contextual Info: BENCHÏ1ARÛ niCROELEC bûE D 137001=] 0001547 150 « B E N bq4015/bq4015Y BENCHMARQ 512Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4015 is a nonvolatile 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The

Contextual Info: High Performance 32Kx9 CMOS SRAM II AS7C259 AS7C259L 32Kx9 CMOS SRAM Common I/O FEATURES Organization: 32,768 words x 9 bits • 2.0V data retention (L version) High speed • Equal access and cycle times - 12/15/20/25/35 ns address access tíme • Easy memory expansion with CE1, CE2, and OE inputs

Contextual Info: IS39LV512 / IS39LV010 / IS39LV040 512 Kbit / 1Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V • Memory Organization - IS39LV512: 64K x 8 512 Kbit - IS39LV010: 128K x 8 (1 Mbit)

IS39LV010

Abstract: A114 ESD IS39LV040
Contextual Info: IS39LV512 / IS39LV010 / IS39LV040 512 Kbit / 1Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V • Memory Organization - IS39LV512: 64K x 8 512 Kbit - IS39LV010: 128K x 8 (1 Mbit)

Contextual Info: IS39LV512 / IS39LV010 / IS39LV040 512 Kbit / 1Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V • Memory Organization - IS39LV512: 64K x 8 512 Kbit - IS39LV010: 128K x 8 (1 Mbit)

Contextual Info: IS39LV512 / IS39LV010 / IS39LV040 512 Kbit / 1Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V • Memory Organization - IS39LV512: 64K x 8 512 Kbit - IS39LV010: 128K x 8 (1 Mbit)

a1718

Abstract: 128ET
Contextual Info: 56852 Data Sheet Technical Data 56800E 16-bit Digital Signal Controllers DSP56852 Rev. 7 06/2005 freescale.com DSP56852 General Description • 120 MIPS at 120MHz • Interrupt Controller • 6K x 16-bit Program SRAM • General Purpose 16-bit Quad Timer • 4K x 16-bit Data SRAM