AS7C259 Search Results

Contextual Info: High Performance 32Kx9 CMOS SRAM II AS7C259 AS7C259L 32Kx9 CMOS SRAM Common I/O FEATURES Organization: 32,768 words x 9 bits • 2.0V data retention (L version) High speed • Equal access and cycle times - 12/15/20/25/35 ns address access tíme • Easy memory expansion with CE1, CE2, and OE inputs

ci 3860, 8 pin

Abstract: 22Z3
Contextual Info: High Performance 32Kx9 CMOS SRAM 11 W ESW . AS7C259 AS7C259L 32K x 9 C M O S S R A M C o m m o n I/O IF E A T U R E S • O rganization: 32,768 w ords x 9 bits • 2.0V data retention (L version) • H igh S peed - Industry's fastest O E A ccess Tim e 12/15/20/25/35 ns A ddress access tim e

taa 723

Abstract: concord
Contextual Info: High Performance 32Kx9 CMOS SRAM AS7C259 AS7C259L 32K×9 CMOS SRAM Common I/O FEATURES • Organization: 32,768 words × 9 bits • 2.0V data retention (L version) • High speed • Equal access and cycle times – 12/15/20/25/35 ns address access time

Contextual Info: High Performance 32Kx9 CMOS SRAM 11 AS7C259 AS7C259L 32Kx9 CMOS SRAM Common I/O IF E A T U R E S • O rganization: 32,768 w ords x 9 bits • 2.0V data retention (L version) • H igh S peed - Industry's fastest O E A ccess Tim e 12/15/20/25/35 ns A ddress access tim e

Contextual Info: High Performance 32Kx9 CMOS SRAM II AS7C259 AS7C259L 32 Kx 9 C M O S S R A M C o m m o n I/O {F E A TU R E S • Organization: 32,768 words x 9 bits • 2.0V data retention (L version) • High Speed - Industry's fastest OE Access Time 12/15/20/25/35 ns Address access time

Contextual Info: AS7C259 5 V 3 2 K X 9 CM O S SRAM O rganization: 3 2 ,7 6 8 w ords X 9 bits H igh speed - 1 5 /2 0 /2 5 ns address access tim e - 4 / 5 / 6 n s o u t p u t e n a b le acc ess tim e Low p o w e r co n su m p tio n - Active: 633 m W m ax 10 ns cycle - Standby: 11 m W max, CMOS I/O

IC SRAM 8K X 8

Abstract: MTSC2568 AS7CI64 CY7CI88 7405M dram cross reference CY7C18S 2kx8 sram cross reference AS19F TC55328
Contextual Info: h u lu s in A Industry mss rei ti t n l r Fast SRAM Vendor Cypress Code ASC Code Description Code ASC Code CY7CIÛ06 AS7C1028 25bK*4 HPD4368 AS7C11>4 8K*8 CY7C18S AS7CI64 8Kx8 HPD43258A AS7C256 32K.X8 Vendor Description CY7CI88 AS7C2 59 3:.Kx9 HPD432S9A AS7C259

Contextual Info: 32Kx9 Fast SRAM AS7C259 Features Logic Block Diagram ♦ High Performance CMOS: tAA=12-35 ns ♦ Fast OE access: t0 E=3-8 ns Vcc GND ♦ Low power - 633 mW @ 100 MHz - 11 mW @ 10 MHz standby AO A1 - 2.75 mW @ 10 MHz standby: L version A2 A3 ♦ Automatic CE1/CE2 power down

DRAM 256 X 1, 18 PDIP

Abstract: 64K X 4 SRAM mmui
Contextual Info: A Contents Fast SRAM Low Voltage Fast SRAM Short Form 1995 AS7C164 8K x 8 3 AS7C256 32K x 8 4 AS7C259 32K x 9 5 AS7C512 64K x 8 6 AS7C1024 128K x 8 300/400 mil 7 AS7C1028 256K x 4 400 mil 8 AS7C3256 32K x 8 3.3V 9 AS7C3512 64K x 8 3.3V 10 AS7C31024 128K x 8

0Q004

Abstract: 41516 taa 723
Contextual Info: High Performance 32Kx9 CMOS SRAM II AS7C259 AS7C259L 32Kx9 CMOS SRAM Common I/O FEATU RES Organization: 32,768 words x 9 bits • 2.0V data retention (L version) High speed • Equal access and cycle times - 12/15/20/25/35 ns address access tim e • Easy memory expansion with CE1, CE2, and OE inputs

Contextual Info: AS7C259 5V32KX9 CMOS SRAM O rganization: 3 2 ,7 6 8 w ords X 9 bits H igh speed - 1 5 /2 0 /2 5 ns address access tim e - 4 / 5 / 6 n s o u t p u t e n a b le acc ess tim e Low p o w e r co n su m p tio n - Active: 633 m W m ax 10 ns cycle - Standby: 11 m W max, CMOS I/O

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

AS7C259-15PC

Abstract: AS7C259-15JC
Contextual Info:  $6& 9.ð&02665$0 HDWXUHV • Low power consumption - Active: 633 mW max 10 ns cycle) - Standby: 11 mW max, CMOS I/O - Very low DC component in active power • 2.0V data retention • Equal access and cycle times /RJLFEORFNGLDJUDP 3LQDUUDQJHPHQW

3d graphics

Contextual Info: H .irl lisi ¡ i l ” \ l | l i i i l ) l i ( ni pur l l i s ! i i uj Product number Product density/description . Page number AS29F010 128Kx 8 equal sector Flash. 237

32Kx16

Abstract: Intel EEPROM 32kx8
Contextual Info: Alliance Semiconductor Memories SRAM 64K - 3 . 3 Volt All densities in bits 512K 1M 256K 32Kx8 A sy n ch ro no u s/ burst •5 Volt X 8Kx8 X 64KX8 1 32KX16 128KX8 X 32KX8 64KX8 X 32Kx9 i 32KX16 2M 4M 64KX32 512KX8 64KX16 X 32KX32 256KX16 X 128Kx8 X 256KX4

AAA1M304

Abstract: tc514256 UM6164 um6164b DYNAMIC RAM CROSS REFERENCE tc554256 M5M44C256 MB82005 NMB Semiconductor IS61C256A
Contextual Info: Cross Reference & Fast Static RAM Vendor Cypress Fujitsu Hitachi IDT ISSI Micron Mltsubish P/N Alliance P/N Description P/N Alliance P/N CY7C106 AS7C1028 256K x 4 MCM32A32 AS7M32D128 128K module CY7C185 AS7C164 8Kx8 MCM32A64 AS7M32D256 256K module CY7C188

AS4C2M8

Contextual Info: A Till ! ni T .i h I e ( *I i i m i e il i s L (h i i t 'l l i \ Page number Product guide. 3 Cross

EPM5128LC

Abstract: EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1 5962-8867812rx
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 5962-8753903LX 5962-8753902LX CY21L49-55C CY21L49-45C CY7C281 CY7C281A 5962-8863701LX 5962-8753902LX CY6116A-45C CY6116A-35C CY7C286 CY27H512 5962-8867003LX 5962-8867002LX CY6116A-55C CY6116A-45C

Contextual Info: High Performance 32KX9 A S7C 259 A S7C 259L C M O S SRA M 3 2 K x 9 CMOS SRAM • Easy memory expansion with CEI, CE2, and OE inputs • TTL-compatible, three-state 1/O • 32-pin JEDEC standard packages - 300 mil PDIP and SOJ • ESD protection > 2 0 0 0 volts