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    SCH1417

    Abstract: No abstract text available
    Text: SCH1417 Ordering number : ENN8164 N-Channel Silicon MOSFET SCH1417 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    PDF SCH1417 ENN8164 900mm2 SCH1417

    SCH1417

    Abstract: SCH2817 SS05015SH Vgs mosfet TB-00001069
    Text: SCH2817 注文コード No. N 8 1 5 5 MOSFET : N チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード SCH2817 汎用スイッチングデバイス 特長 ・N チャネル MOS 形電界効果トランジスタ(SCH1417)


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    PDF SCH2817 SCH1417 SS05015SH 900mm2 TB-00001069 IT06804 IT06805 IT06806 SCH1417 SCH2817 Vgs mosfet

    8162-2

    Abstract: 8162 MCH3456
    Text: MCH3456 Ordering number : EN8162A SANYO Semiconductors DATA SHEET MCH3456 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C


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    PDF MCH3456 EN8162A 900mm2 8162-2 8162 MCH3456

    SCH1417

    Abstract: SCH2817 SS05015SH TB-00001069
    Text: SCH2817 Ordering number : ENN8155 SCH2817 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-Channel Silicon MOSFET SCH1417 and a Schottky Barrier Diode (SS05015SH)


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    PDF SCH2817 ENN8155 SCH1417) SS05015SH) SCH1417 SCH2817 SS05015SH TB-00001069

    MCH3456

    Abstract: No abstract text available
    Text: MCH3456 Ordering number : ENN8162 MCH3456 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    PDF MCH3456 ENN8162 900mm2 MCH3456

    Untitled

    Abstract: No abstract text available
    Text: MCH3456 Ordering number : EN8162A MCH3456 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    PDF EN8162A MCH3456 900mm2

    MCH3456

    Abstract: MCH5826 SS05015SH
    Text: MCH5826 Ordering number : ENN8163 MCH5826 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with a N-Channel Silicon MOSFET MCH3456 and a Schottky Barrier Diode (SS05015SH)


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    PDF MCH5826 ENN8163 MCH3456) SS05015SH) MCH3456 MCH5826 SS05015SH

    SCH1417

    Abstract: 8164-2
    Text: SCH1417 注文コード No. N 8 1 6 4 SCH1417 N チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・超高速スイッチング。 ・1.8V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃


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    PDF SCH1417 900mm2 IT08583 900mm2 IT08684 IT08685 SCH1417 8164-2