Contextual Info: EMH2308 Ordering number : ENA1445 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EMH2308 General-Purpose Switching Device Applications Features • • The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,

EMH2308

Contextual Info: EMH2308 Ordering number : ENA1445 SANYO Semiconductors DATA SHEET EMH2308 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,

Contextual Info: EMH2801 Ordering number : ENA1821 SANYO Semiconductors DATA SHEET MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode EMH2801 General-Purpose Switching Device Applications Features • • • • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package

Contextual Info: EMH2801 注文コード No. N A 1 8 2 1 三洋半導体データシート N MOSFET : P チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード EMH2801 汎用スイッチングデバイス 特長 ・ P チャネル MOS 型電界効果トランジスタとショットキバリアダイオードを 1 パッケージに内蔵した複合タイプ

Contextual Info: EMH2308 Ordering number : ENA1445A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EMH2308 General-Purpose Switching Device Applications Features • • • • The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,

Contextual Info: EMH2308 Ordering number : ENA1445A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EMH2308 General-Purpose Switching Device Applications Features • • • • The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,

it134

Contextual Info: EMH2604 Ordering number : EN9006A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2604 General-Purpose Switching Device Applications Features • • • • Nch + Pch MOSFET ON-resistance Nch : RDS on 1=34mΩ(typ.) Pch : RDS(on)1=65mΩ(typ.)

Contextual Info: EMH2801 Ordering number : ENA1821 SANYO Semiconductors DATA SHEET MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode EMH2801 General-Purpose Switching Device Applications Features • • • • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package

Contextual Info: Ordering number : EN9006A EMH2604 Power MOSFET http://onsemi.com 20V, 4A, 45mΩ, –20V, –3A, 85mΩ, Complementary Dual EMH8 Features • • • • Nch + Pch MOSFET ON-resistance Nch : RDS on 1=34mΩ(typ.) Pch : RDS(on)1=65mΩ(typ.) 1.8V drive Halogen free compliance

Contextual Info: EMH2801 Ordering number : ENA1821A SANYO Semiconductors DATA SHEET MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode EMH2801 General-Purpose Switching Device Applications Features • • • • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package

EN9006

Contextual Info: EMH2604 Ordering number : EN9006 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2604 General-Purpose Switching Device Applications Features • • • • Nch + Pch MOSFET ON-resistance Nch : RDS on 1=34mΩ(typ.) Pch : RDS(on)1=65mΩ(typ.)

A1445-3

Abstract: EMH2308
Contextual Info: EMH2308 注文コード No. N A 1 4 4 5 三洋半導体データシート N EMH2308 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ 低オン抵抗超高速スイッチングの P チャネル MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した

Contextual Info: Ordering number : ENA1445A EMH2308 P-Channel Power MOSFET http://onsemi.com –20V, –3A, 85mΩ, Dual EMH8 Features • • • • The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting

Contextual Info: EMH2604 Ordering number : EN9006A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2604 General-Purpose Switching Device Applications Features • • • • Nch + Pch MOSFET ON-resistance Nch : RDS on 1=34mΩ(typ.) Pch : RDS(on)1=65mΩ(typ.)

Contextual Info: Ordering number : ENA1445A EMH2308 P-Channel Power MOSFET http://onsemi.com –20V, –3A, 85mΩ, Single EMH8 Features • • • • The EMH2308 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting

Contextual Info: Ordering number : ENA1821A EMH2801 P-Channel Power MOSFET http://onsemi.com –20V, –3A, 85mΩ, Single EMH8 with Schottky Diode Features • • • • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package