ITH725G Search Results
ITH725G Datasheets Context Search
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 7.1 GHz to 7.9 GHz • High gain |
OCR Scan |
TIM7179-8L MW51000196 TIM7179-8L itH725G |