2044B
Abstract: 2SA1732 ITR04435 ITR04436 ITR04437 ta1210 N-313
Text: 注文コード No. N 3 1 3 6 2SA1732 N3136 20400 2SA1732 特長 PNP エピタキシァルプレーナ形シリコントランジスタ 高速度スイッチング用 ・FBET, MBIT プロセス採用。 ・電流容量が大きい。 ・コレクタ・エミッタ飽和電圧が低い。
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2SA1732
N3136
2044B
ITR04442
ITR04439
ITR04443
ITR04444
2044B
2SA1732
ITR04435
ITR04436
ITR04437
ta1210
N-313
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2SA1732
Abstract: 2044B ITR04435
Text: Ordering number:ENN3136 PNP Epitaxial Planar Silicon Transistor 2SA1732 High-Speed Switching Applications Package Dimensions • Adoption of FBET processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.
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ENN3136
2SA1732
2045B
2SA1732]
2044B
2SA1732
2044B
ITR04435
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2044B
Abstract: 2SA1732 ITR04435
Text: Ordering number:ENN3136 PNP Epitaxial Planar Silicon Transistor 2SA1732 High-Speed Switching Applications Package Dimensions • Adoption of FBET processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.
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Original
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PDF
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ENN3136
2SA1732
2045B
2SA1732]
2044B
2044B
2SA1732
ITR04435
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