ITS08C12 Search Results
ITS08C12 Datasheets Context Search
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Contextual Info: S i GEC P L ES SE Y NOVEMBERS SEMI CO NDUC TOR S ADVANCE INFORMATION DS4752-2.1 ITS08C12 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS08C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage |
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DS4752-2 ITS08C12 ITS08C12 | |
DS4752Contextual Info: ITS08C12 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Novem ber 1997 version, DS4752 - 2.1 The ITS08C12 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r |
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ITS08C12 DS4752 ITS08C12 | |
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Contextual Info: ITS08C12 M ITEL S E M IC O N D U C T O R Powerline N-Channel IGBTW ith Ultrafast Diode Advance Information S upersedes N ovem ber 1997 version, DS4752 - 2.1 The ITS08C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for |
OCR Scan |
ITS08C12 DS4752 ITS08C12 |