BB629
Abstract: ITT Intermetall
Text: ITT SEP1IC0ND/ INTERMETALL 50E ]> • 4bfi2711 D0D2b5D E4T m i S I 'TOI-lOj BB629 Tuner Diode Silicon Epitaxial Planar Capacitance Diode in MiniMELF case MELF = Metal ELectrodes Face-bonding especially suited for automatic insertion with very high effective capacitance
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Q02b5G
BB629
BB629
ITT Intermetall
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BB701
Abstract: itt diodes ITT DIODE tv ITT DIODE 125 itt diodes 125 ITT diode DIODE ITT 12 diode ITT G0317 INTERMETALL
Text: ITT SEIUCOND/ INTERMETALL hlE ] • 4bû2711 □G0317? Ô75 M I S I BB701 Tuner Diode Si Epitaxial Planar Capacitance Diode for tuning the fre quency range of 950 MHz to 1750 MHz, especially for satel lite TV tuner. These diodes are available as singles or as matched sets of
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G0317?
BB701
Mbfl271]
00Q317Ã
BB701
itt diodes
ITT DIODE tv
ITT DIODE 125
itt diodes 125
ITT diode
DIODE ITT 12
diode ITT
G0317
INTERMETALL
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BB601
Abstract: E711
Text: ITT SEflICOND/ INTERMETALL SÜE J> WÊ 4fc,fl27]jl 0002b4G 3TD « I S I BB601 Tuner Diode Si Epitaxial Planar Capacitance Diode for tuning the fre quency range of 950 MHz to 1750 MHz, especially for satel lite TV tuner. TTr 71 These diodes are available as singles or as matched sets of
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4bfl2711
0002b4G
BB601
QQ02b41
BB601
E711
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ITT BA159
Abstract: diode ITT 157 ba ba159 ITT BA157 ba159 diode BA157 BA157 200 BA158 DIODE BA159 BA159 switching diode
Text: ITT SEMICON»/ INTERMETALL 50E D 4bA2711 OODBMSS S74 M I S I 13 BA157 . BA159 Fast General Purpose Silicon Rectifiers for high speed switching applications, e. g. as clamping diode in colour TV receivers J * - max 3.2 islI f I Cathode Mark ^0.8 i> Plastic case
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4bfl2711
BA157
BA159
BA157
BA158
BA159
4b62711
BA157:
ITT BA159
diode ITT 157 ba
ITT BA157
ba159 diode
BA157 200
DIODE BA159
BA159 switching diode
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BA282 itt
Abstract: BA282 ITT ba283 ITT ba 283 BA283 BA283 Diode
Text: ITT SEMICOND/ INTERflETALL 50E D 4bA2711 0002631 1ST M I S I BA282, BA283 Silicon Epitaxial Planar Diode Switches for electronic bandswitching in radio and TV tuners in the frequency range of 50 . 1000 MHz. The dynamic forward resistance is constant and very small over a wide range of
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4bfl2711
BA282,
BA283
DO-35
BA283
BA282
BA282 itt
ITT ba283
ITT ba 283
BA283 Diode
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BA244A
Abstract: ITT Intermetall BA243A
Text: ITT SEMICOND/ INTERMETALL SÜE D 4bûE711 DDGafiaT STI IISI T-cfM$ BA243A, BA244A Silicon Epitaxial Planar Diode Switches for electronic bandswitching in radio and TV tuners in the frequency range of 50 . 1000 MHz. The dynamic forward resistance is constant and very small over a wide range of
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BA243A,
BA244A
4bflE711
DO-35
BA243A
BA244A
ITT Intermetall
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Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC 30E D • - S b4B75SS 002^042 4 ■ LIGHT EM ITT IN G D IO D E S E 1 0 0 3 -C GaAIAs on G a As INFRARED EM ITTING DIODE DESCRIPTION The SE1003-C is a GaAIAs on GaAs Infrared Em itting Diode which is mounted on the lead frames and molded in plastic. On
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b4B75SS
SE1003-C
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M74C14N
Abstract: 74C14M
Text: O ctober 1987 Revised Ja nuary 1999 S E M IC O N D U C T O R !!^ MM74C14 Hex Schmitt Trigger General Description All inputs are protected from dam age due to static dis charge by diode clam ps to Vc c and GND. The M M 74C 14 Hex S chm itt Trigger is a m onolithic com ple
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MM74C14
M74C14N
74C14M
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DIODE BA244
Abstract: 1n4148 ITT 30M5R DIODE BA243 BA244 ITT 1N4150 155pa3 BA243 BAX13 ITT44
Text: ITT Sem iconductors Diodes Epitaxial Pianar Diode Sw itches R E F E R E N C E T A B L E . Forr.f. bandsw itching up to 1000 M H z Code Switching Band V BH| min. V R F max. at l F O mA C max. pf BA243 B A244 VHF UHF 20 20 1.0 0.5 2 2 10 10 at V„ V Outline
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BA243
BA244
277MR
27729F
BA157
3M13R
BA158
30914G
BA159
3091SE
DIODE BA244
1n4148 ITT
30M5R
DIODE BA243
ITT 1N4150
155pa3
BAX13
ITT44
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4N25A
Abstract: No abstract text available
Text: Optoisolator Specifications 4N25, 4N25A, 4N26, 4N27, 4N28 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor MIN. T h e 4 N 2 5 , 4N 25A , 4 N 2 6 , 4 N 2 7 , 4 N 2 8 d e v ic e s c o n s is t o f a g a lliu m a rs e n id e in fra re d e m itt in g d io d e c o u p le d w ith a s ilic o n p h o to t r a n s is to r
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4N25A,
4N25-4N28
4N25A
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sx3704
Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
Text: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are
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ircD376
BD234
VT854,
VT855â
VT854*
iTT44,
BZX79-C24,
BZX83-C24,
BZX88-C24
sx3704
BRC157
BRC-116
Germanium Diode aa143
1n4148 ITT
TRANSISTOR BC147
BC107/spice model bf199
BY238
SN76226DN
tungsram
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KSD5076
Abstract: No abstract text available
Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5076 COLOR TV HORIZONTAL OUTPUT APPLICATION NO Damper Diode • High Collector-Base Voltage (Vcgo=1500V) • High Speed Switching (tf. max=0.4uS) ABSOLUTE MIXIMUM RATING C haracteristic S ym bol R ating U nit
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KSD5076
KSD5076
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SAA 1251
Abstract: ZPD ITT diode 3 3 ZPD ITT SAA1251 ZPD ITT 10 ITT ZPD SAA 1250 itt saa 1024 RY130 ZPD* ITT
Text: SAA 1250 Infrared Remote-Control Transm itter IC This integrated CMOS circu it has been developed fo r in frared rem ote control of co lo r TV receivers, but can also be used fo r other re m o te -co n tro l applications with advantage. It consum es a minimal current and, due to its large in stru c
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2030/CCU
2050/CCU
1290/SAA
SAA 1251
ZPD ITT diode 3 3
ZPD ITT
SAA1251
ZPD ITT 10
ITT ZPD
SAA 1250
itt saa 1024
RY130
ZPD* ITT
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diode code ae 89A
Abstract: diode AE 89A 377 hall sensor ITT INTERMETALL ITT semiconductors ITT 30 15 an 220 diode ITT specification
Text: Edition May 7,1997 6251-345-4PD ITT INTER METALL 4^82711 GOObSflG TIE HAL300 PRELIMINARY DATA SHEET Marking Code Differential Hall Effect Sensor 1C in CMOS technology Type Tem serature Riinge Release Notes: Revision bars indicate significant changes to the previous edition.
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6251-345-4PD
HAL300
diode code ae 89A
diode AE 89A
377 hall sensor
ITT INTERMETALL
ITT semiconductors
ITT 30 15 an 220
diode ITT specification
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TF861
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2089 SMALL SCREEN COLOR TV HORIZONTAL OUTPUT APPLICATIONS WITH NO HEAT SINKING. Unit in mm 1 5 .5 ± 0 .5 I- 3.6 ± 0 .3 3.0 ± 0 .3 . Designed for Heat Sinking Less Applications of Horiaontal Output in Small Screen Color TV.
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2SD2089
2S02089
TF861
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22a ic
Abstract: IC22A 2SD2089 2482 npn
Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2089 SMALL SCREEN COLOR TV HORIZONTAL OUTPUT APPLICATIONS WITH NO HEAT SINKING. Unit in mm 1 5 .5 ± 0 . 5 3 -6 ± 0 . 3 3 0 ± 0 .3 . Designed for Heat Sinking Less Applications of Horiaontal Output in Small Screen Color TV.
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2SD2089
22a ic
IC22A
2SD2089
2482 npn
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BS250
Abstract: diode ITT 172 ITT Intermetall bs250 ITT DIODE
Text: BS250 P-Channel Enhancement Mode DMOS Transistor Features - high input impedance - high-speed switching - no minority carrier storage time - CMOS logic compatible input - no thermal runaway - no secondary breakdown On special request, this transistor is also manufactured
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BS250
500mA
BS250
diode ITT 172
ITT Intermetall bs250
ITT DIODE
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a467
Abstract: TS802C09 ts802c PUAR
Text: TS802C09< ioa SCHOTTKY BARRIER DIODE Features • »»*#1*^116 Surface mount device. • 1fcVF Low VF • X-f Xl£-KA *#*i:3fc\,' Super high speed switching. •w s& s* Connection Diagram • TV-*- Jt t f t f l MRt t High reliability by planer design. ■ £ ! & : Applications
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TS802C09
500ns,
TS802C09(
a467
ts802c
PUAR
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ITT DIODE tv
Abstract: ITT DIODE ITT DIODE 60
Text: BS850 P-Channel Enhancement Mode DMOS Transistor Features - high input impedance - high-speed switching - no minority carrier storage time - CMOS logic compatible input - no thermal runaway - no secondary breakdown Pin configuration 1 = Drain, 2 = Gate, 3 = Source
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BS850
OT-23
BS85Q
ITT DIODE tv
ITT DIODE
ITT DIODE 60
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Untitled
Abstract: No abstract text available
Text: OIXYS MEO 450-12DA Preliminary Data Fast Recovery Epitaxial Diode FRED Module V RSM ^RRM 1200V 1200V Symbol • frm s ^favm IFRM Test Conditions 2460 A A A A A A A 6 4 0 453 < 10 ^ S' reP- ratin9> pulse width limited by TVJM TVJ = 150°C TVJ = 45° C TVJ = 150°C
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450-12DA
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ITT DIODE 129
Abstract: diode ITT 129 bs108 ITT DIODE ITT Intermetall bs108 transistor ITT
Text: BS108 N-Channel Enhancement Mode DMOS Transistor Features - high breakdown voltage - high input impedance - low gate threshold voltage - low drain-source ON resistance - high-speed switching - no minority carrier storage time - CMOS logic compatible input
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BS108
1000mA
ITT DIODE 129
diode ITT 129
bs108
ITT DIODE
ITT Intermetall bs108
transistor ITT
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TS802C09
Abstract: Collmer SC
Text: TS802C09< ioa SCHOTTKY BARRIER DIODE Features • »»*#1*^116 Surface mount device. • 1fcVF Low VF • X-f Xl£-KA *#*i:3fc\,' •w s& s* Connection Diagram Super high speed switching. • TV-*- Jt t f t f l MRt t High reliability by planer design. ■ £ ! & : Applications
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TS802C09
500ns,
TS802C09(
Collmer SC
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n-p-n power transistor planar
Abstract: horizontal transistor
Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5064 COLOR TV HORIZONTAL OUTPUT APPLICATIONS No Damper Diode • High Collector-Base Voltage (VCbo=1500V) • High Speed Switching (tf. max=0.4uS) ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit
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KSD5064
n-p-n power transistor planar
horizontal transistor
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VCU 2136
Abstract: DPU2553 MSP2400 LED TV Screen working Theory ADC2311 IRT1250 DTI2223 APU2471 VCU2136 DIGIT2000
Text: DIGIT2000 DIGITAL TV SYSTEM ITT SEMICOND/ INTERHETALL SDE ]> • MbfiE?]»! 00 0E 475 aSfi « I S I - T - m
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DIGIT2000
DIGIT2000"
DO-41
DO-35
DO-34
55s0iS
VCU 2136
DPU2553
MSP2400
LED TV Screen working Theory
ADC2311
IRT1250
DTI2223
APU2471
VCU2136
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