ITT DIODE TV Search Results

BB629

Abstract: ITT Intermetall
Contextual Info: ITT SEP1IC0ND/ INTERMETALL 50E ]> • 4bfi2711 D0D2b5D E4T m i S I 'TOI-lOj BB629 Tuner Diode Silicon Epitaxial Planar Capacitance Diode in MiniMELF case MELF = Metal ELectrodes Face-bonding especially suited for automatic insertion with very high effective capacitance

BB701

Abstract: itt diodes ITT DIODE tv ITT DIODE 125 itt diodes 125 ITT diode DIODE ITT 12 diode ITT G0317 INTERMETALL
Contextual Info: ITT SEIUCOND/ INTERMETALL hlE ] • 4bû2711 □G0317? Ô75 M I S I BB701 Tuner Diode Si Epitaxial Planar Capacitance Diode for tuning the fre­ quency range of 950 MHz to 1750 MHz, especially for satel­ lite TV tuner. These diodes are available as singles or as matched sets of

BB601

Abstract: E711
Contextual Info: ITT SEflICOND/ INTERMETALL SÜE J> WÊ 4fc,fl27]jl 0002b4G 3TD « I S I BB601 Tuner Diode Si Epitaxial Planar Capacitance Diode for tuning the fre­ quency range of 950 MHz to 1750 MHz, especially for satel­ lite TV tuner. TTr 71 These diodes are available as singles or as matched sets of

ITT BA159

Abstract: diode ITT 157 ba ba159 ITT BA157 ba159 diode BA157 BA157 200 BA158 DIODE BA159 BA159 switching diode
Contextual Info: ITT SEMICON»/ INTERMETALL 50E D 4bA2711 OODBMSS S74 M I S I 13 BA157 . BA159 Fast General Purpose Silicon Rectifiers for high speed switching applications, e. g. as clamping diode in colour TV receivers J * - max 3.2 islI f I Cathode Mark ^0.8 i> Plastic case

BA282 itt

Abstract: BA282 ITT ba283 ITT ba 283 BA283 BA283 Diode
Contextual Info: ITT SEMICOND/ INTERflETALL 50E D 4bA2711 0002631 1ST M I S I BA282, BA283 Silicon Epitaxial Planar Diode Switches for electronic bandswitching in radio and TV tuners in the frequency range of 50 . 1000 MHz. The dynamic forward resistance is constant and very small over a wide range of

BA244A

Abstract: ITT Intermetall BA243A
Contextual Info: ITT SEMICOND/ INTERMETALL SÜE D 4bûE711 DDGafiaT STI IISI T-cfM$ BA243A, BA244A Silicon Epitaxial Planar Diode Switches for electronic bandswitching in radio and TV tuners in the frequency range of 50 . 1000 MHz. The dynamic forward resistance is constant and very small over a wide range of

Contextual Info: N E C ELECTRONICS INC 30E D • - S b4B75SS 002^042 4 ■ LIGHT EM ITT IN G D IO D E S E 1 0 0 3 -C GaAIAs on G a As INFRARED EM ITTING DIODE DESCRIPTION The SE1003-C is a GaAIAs on GaAs Infrared Em itting Diode which is mounted on the lead frames and molded in plastic. On

M74C14N

Abstract: 74C14M
Contextual Info: O ctober 1987 Revised Ja nuary 1999 S E M IC O N D U C T O R !!^ MM74C14 Hex Schmitt Trigger General Description All inputs are protected from dam age due to static dis­ charge by diode clam ps to Vc c and GND. The M M 74C 14 Hex S chm itt Trigger is a m onolithic com ple­

DIODE BA244

Abstract: 1n4148 ITT 30M5R DIODE BA243 BA244 ITT 1N4150 155pa3 BA243 BAX13 ITT44
Contextual Info: ITT Sem iconductors Diodes Epitaxial Pianar Diode Sw itches R E F E R E N C E T A B L E . Forr.f. bandsw itching up to 1000 M H z Code Switching Band V BH| min. V R F max. at l F O mA C max. pf BA243 B A244 VHF UHF 20 20 1.0 0.5 2 2 10 10 at V„ V Outline

4N25A

Contextual Info: Optoisolator Specifications 4N25, 4N25A, 4N26, 4N27, 4N28 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor MIN. T h e 4 N 2 5 , 4N 25A , 4 N 2 6 , 4 N 2 7 , 4 N 2 8 d e v ic e s c o n s is t o f a g a lliu m a rs e n id e in fra re d e m itt in g d io d e c o u p le d w ith a s ilic o n p h o to t r a n s is to r

sx3704

Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
Contextual Info: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are

KSD5076

Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5076 COLOR TV HORIZONTAL OUTPUT APPLICATION NO Damper Diode • High Collector-Base Voltage (Vcgo=1500V) • High Speed Switching (tf. max=0.4uS) ABSOLUTE MIXIMUM RATING C haracteristic S ym bol R ating U nit

SAA 1251

Abstract: ZPD ITT diode 3 3 ZPD ITT SAA1251 ZPD ITT 10 ITT ZPD SAA 1250 itt saa 1024 RY130 ZPD* ITT
Contextual Info: SAA 1250 Infrared Remote-Control Transm itter IC This integrated CMOS circu it has been developed fo r in­ frared rem ote control of co lo r TV receivers, but can also be used fo r other re m o te -co n tro l applications with advantage. It consum es a minimal current and, due to its large in stru c­

diode code ae 89A

Abstract: diode AE 89A 377 hall sensor ITT INTERMETALL ITT semiconductors ITT 30 15 an 220 diode ITT specification
Contextual Info: Edition May 7,1997 6251-345-4PD ITT INTER METALL 4^82711 GOObSflG TIE HAL300 PRELIMINARY DATA SHEET Marking Code Differential Hall Effect Sensor 1C in CMOS technology Type Tem serature Riinge Release Notes: Revision bars indicate significant changes to the previous edition.

TF861

Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2089 SMALL SCREEN COLOR TV HORIZONTAL OUTPUT APPLICATIONS WITH NO HEAT SINKING. Unit in mm 1 5 .5 ± 0 .5 I- 3.6 ± 0 .3 3.0 ± 0 .3 . Designed for Heat Sinking Less Applications of Horiaontal Output in Small Screen Color TV.

22a ic

Abstract: IC22A 2SD2089 2482 npn
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2089 SMALL SCREEN COLOR TV HORIZONTAL OUTPUT APPLICATIONS WITH NO HEAT SINKING. Unit in mm 1 5 .5 ± 0 . 5 3 -6 ± 0 . 3 3 0 ± 0 .3 . Designed for Heat Sinking Less Applications of Horiaontal Output in Small Screen Color TV.

BS250

Abstract: diode ITT 172 ITT Intermetall bs250 ITT DIODE
Contextual Info: BS250 P-Channel Enhancement Mode DMOS Transistor Features - high input impedance - high-speed switching - no minority carrier storage time - CMOS logic compatible input - no thermal runaway - no secondary breakdown On special request, this transistor is also manufactured

a467

Abstract: TS802C09 ts802c PUAR
Contextual Info: TS802C09< ioa SCHOTTKY BARRIER DIODE Features • »»*#1*^116 Surface mount device. • 1fcVF Low VF • X-f Xl£-KA *#*i:3fc\,' Super high speed switching. •w s& s* Connection Diagram • TV-*- Jt t f t f l MRt t High reliability by planer design. ■ £ ! & : Applications

ITT DIODE tv

Abstract: ITT DIODE ITT DIODE 60
Contextual Info: BS850 P-Channel Enhancement Mode DMOS Transistor Features - high input impedance - high-speed switching - no minority carrier storage time - CMOS logic compatible input - no thermal runaway - no secondary breakdown Pin configuration 1 = Drain, 2 = Gate, 3 = Source

Contextual Info: OIXYS MEO 450-12DA Preliminary Data Fast Recovery Epitaxial Diode FRED Module V RSM ^RRM 1200V 1200V Symbol • frm s ^favm IFRM Test Conditions 2460 A A A A A A A 6 4 0 453 < 10 ^ S' reP- ratin9> pulse width limited by TVJM TVJ = 150°C TVJ = 45° C TVJ = 150°C

ITT DIODE 129

Abstract: diode ITT 129 bs108 ITT DIODE ITT Intermetall bs108 transistor ITT
Contextual Info: BS108 N-Channel Enhancement Mode DMOS Transistor Features - high breakdown voltage - high input impedance - low gate threshold voltage - low drain-source ON resistance - high-speed switching - no minority carrier storage time - CMOS logic compatible input

TS802C09

Abstract: Collmer SC
Contextual Info: TS802C09< ioa SCHOTTKY BARRIER DIODE Features • »»*#1*^116 Surface mount device. • 1fcVF Low VF • X-f Xl£-KA *#*i:3fc\,' •w s& s* Connection Diagram Super high speed switching. • TV-*- Jt t f t f l MRt t High reliability by planer design. ■ £ ! & : Applications

n-p-n power transistor planar

Abstract: horizontal transistor
Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5064 COLOR TV HORIZONTAL OUTPUT APPLICATIONS No Damper Diode • High Collector-Base Voltage (VCbo=1500V) • High Speed Switching (tf. max=0.4uS) ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit

VCU 2136

Abstract: DPU2553 MSP2400 LED TV Screen working Theory ADC2311 IRT1250 DTI2223 APU2471 VCU2136 DIGIT2000
Contextual Info: DIGIT2000 DIGITAL TV SYSTEM ITT SEMICOND/ INTERHETALL SDE ]> • MbfiE?]»! 00 0E 475 aSfi « I S I - T - m