ITT RTA SWITCH Search Results

itt rt-a

Abstract: itt rotary switch 14 positions itt cannon GS rotary coded switch 12 positions itt rta 103B03 108B08 itt rotary switch bcd coded itt industries rotary k itt rta switch
Contextual Info: C&K RTA Series 1-4 Poles Coded Rotary Switches Features/Benefits Typical Applications • PCB or hand soldering versions • Appliances • Bushing mounting • Electronic alarm systems • Multiple poles • Medical • Decimal and hexadecimal codes • Building automation

Contextual Info: RF Coaxial Connectors IT T C a n n o n is a com pany with th e in -d ep th ex p e rien c e o f an 80-plus year history a n d the innovative spirit o f a dynam ic en te rp rise. As a key p a rt o f this e n te rp rise IT T C a n n o n RF P ro d u cts has b e e n providing highly reliable coaxial c o n n e cto rs for

AM336-1

Abstract: ZPD 6.8 ITT ZPD ITT ZPD ITT 6,8 ITT ZPD 4.7 ZPD ITT diode 3 3 ZPD 15 ITT ZPD ITT 10 Zener ZPD 24 blue BST60
Contextual Info: IC FOR OPTO DETECTOR AM 336 FEATURES GENERAL DESCRIPTION • 2 Operation Modes Proximity and Barrier • External Synchronisation in the Barrier Mode • Ambient Light Rejection • Adjustable Threshold and Hysteresis • Normally Open and Normally Closed

RT1N234X

Abstract: RT1P234C RT1P234M RT1P234T2 RT1P234U RT1P234X
Contextual Info: T r a n s is to r RT1P234X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION HT1P234X is a OUTLINE one chip transistor RT1P234U with built-in bias resistor.NPN type Is RT1N234X UNIT mm DRAWING R T1P 234C 23

ZPD 5.1 ITT

Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Contextual Info: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers

Mounting tray arinc 404

Abstract: D SUB connector ITT Cannon MIL-DTL-24308 Coaxial Connectors iec 169-13 Coaxial Connectors IEC 169-13 RF 75 734A coaxial cable circuit diagram of car central lock system Car Central lock system cannon plug standard pin TZC75024
Contextual Info: Electronic Components 75 Ohm Connectors Customer Support Locations AMERICAS 100 New Wood Road Watertown, CT 06796 Tel: 860.945.0206 Toll Free: 800.683.7666 Fax: 860.645.0303 Cannon 75 Ohm Connectors ASIA Unit 901 & 912, West Tower, Shun Tak Center 168-200 Connaught Road

k 3918 TRANSISTOR

Abstract: K 3918 MOSFET igbt to 60 kHz transistor k 3918 single phase SPWM IC
Contextual Info: “i 1-1- 1-1- 1-1-1- 1-1- 1-1-1- 1-1- 1-1-1- 1-1- 1-r ACT5101 HIGH VOLTAGE 3-PHASE BRUSHLESS DC MOTOR DRIVE J I I I I I I I I I I I I I Features • 500 VDC RATING 40 AMP CONTINUOUS CURRENT UP TO 85 C

sw359a

Abstract: 359AT SW-359A sw030
Contextual Info: > M Â € ô t1 m an A M P com pany 2 Watt Cellular T/R and Antenna Changeover Switch DC-2.0 GHz SW-358,359A Features • • • • • • SSOP-8 Low Cost Plastic SSOP-8 Package Both Positive a n d /o r N egative 3 to 10 V Control Low Insertion Loss: 0.4 dB

Contextual Info: PD 9.1462A International IOR Rectifier IRG4PC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

LB1881V

Abstract: lb1881 EN4456 LB1881M
Contextual Info: O rd e rin g nu m b er :E N 4 4 5 6 Monolithic Digital 1C LB1881V Three-Phase Brushless Motor Driver Overview Package Dimensions The LB 188I V is a three-phase brushless molor driver IC designed for use as a cam corder capstan or drum motor driver, or as a digital audio tape player/recorder

ITT DIODE

Contextual Info: 18-Channel Analog Multiplexer/Demultiplexer This device connect* together the output« of 8 sw itches, thus achieving an 8 Channel M ultiplexer. The binary code placed on the A, 8, and C select line* determ ine which one of the eight sw itches in "o n ", and connects one of the eight inputs

2SJ211

Abstract: N15j
Contextual Info: •At In MOS FIELD EFFECT TRANSISTOR 2SJ211 P-CHANNEL MOS FET FOR SWITCHING T he 2 S J 2 1 1 , P-channel vertical ty p e M O S F E T , is a sw itching device PACKAGE DIMENSIONS Unit : mm source. 2.8 ±0.2 1.5 w hich can be driven d ire c tly by the o u tp u t o f ICs having a 5 V p ow er

2SJ197

Abstract: 2SK1483
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ197 P-CHANNEL MOS FET FOR SWITCHING The 2SJ197, P-channel vertical type MOS F E T , is a switching P A C K A G E D IM E N S IO N S U n it : mm device which can be driven directly by the o u tp ut o f ICs having a 5

SO45

Contextual Info: CS-2516 W SCS-2516 Pulse-load Battery Monitor D e sc r ip t io n The CS-2516 is designed for use in bat­ tery powered medical, security, or environmental systems where prior notification of impending power source failure is a requirement. The IC effectively provides continuous moni­

Contextual Info: 19-0199, Rev1, 8/95 JVVÆXAJVV Programmable DTE/DCE, +5V RS-232 Transceiver _ Features ♦ Eliminates Null Modem Cables _ Applications ♦ Receivers Active in Shutdown ♦ Programmable DTE or DCE Serial Port ♦ 1pF Charge-Pump Capacitors

TTL RS232 Level Converter

Abstract: 232CAB
Contextual Info: VMyJXIVM 19-0199; Rev 0; 10/93 Program m able DTE/DCE, +SV R S-232 Transceiver _ A p p lic a tio n s F e a tu r e s ♦ Eliminates Null Modem Cables ♦ Programmable DTE or DCE Serial Port ♦ 1fiF Charge-Pump Capacitors ♦ 116kbps Data Rate—Guaranteed

Contextual Info: Ordering number : ENN5917 M o n o lith ic D igital 1C LB1981V Three-Phase Brushless Motor Driver Overview Package Dimensions T h e L B 19 8 1 V is a th re e -p h a s e b ru s h le s s m o to r d riv e r u n it: m m e s p e c ia lly s u ite d f o r u s e m a in ly w ith d ru m m o to rs o f

Til 160

Abstract: TIL111 TIL116 d1607 TIL114 TIL117 752a5
Contextual Info: TIL111, TIL114. TIL116, TIL117 OPTOCOUPLERS SOOS040 D1607, N O V E M B E R 1 9 7 3 -R E V IS E O FEBR U AR Y 19S3 C O M P A T IB L E W IT H S T A N D A R D T T L IN T E G R A T E D C IR C U IT S • G allium Arsenide Diode Infrared Source O ptically Coupled

FDK IN 089

Abstract: FDK DC S028 TDA8705 TDA8705T
Contextual Info: Product specification Philips Semiconductors 6-bit high-speed dual Analog-to-Digital Converter ADC TDA8705 FEATURES APPLICATIONS • 2 times 6-bit resolution High-speed analog-to-digital conversion for: • Sampling rate up to 40 MHz • DBS (Digital Broadcast Satellite)

mbm27c128

Abstract: 27C128-25
Contextual Info: FU JITSU CMOS UV ERASABLE 131072-BIT READ ONLY MEMORY MBM 27C128-17 MBM 27C128-20 MBM 27C128-25 CMOS 131072 B IT U V ERASABLE A N D EL E C T R IC A L LY PROG RAM M ABLE REA D O N L Y M EM O RY The Fujitsu MBM 27C128 is a high speed 131,072 b it static com plem entary

1sbl

Abstract: LS132 schematic diagram inverter LS13 SN74LS19A SN74LS24A TS14 ls24a
Contextual Info: SN74LS1SA, SN74LS24A SCHMITT-TRIGGER POSITIVE NAND GATES AND INVERTERS WITH TOTEM-POLE OUTPUTS SDLS138 JANUARY 1981 - REVISED MARCH 1388 • Functionally and Mechanically Identical to 'L S 1 3, T S 1 4 , and L S 132, Respectively • Improved Line-Receiving Characteristics

7MBR50SB140

Abstract: IC-254
Contextual Info: This Maieri? and ihe inlormstion herein Is the property o f fuji Elee me Co. Ltd. They shall be neither «produced, copied, lent, or disclosed Jn any way whatsoever for the use of any ihlrd part^nor used for the manufacturing pur poses w ith o u t ihe express written consent o< Fuji Electric Co.Ltd,

sis 965

Contextual Info: SIEMENS Window Discriminator TCA 965 B B ip o la r 1C P relim inary F eatures • • • • T w o w in d o w settings - d irect se ttin g o f lo w e r and upper edge vo lta g e w in d ow edges - indirect se ttin g by w in d o w center vo lta g e and half w in d o w w idth

TT 2188 transistor

Abstract: 12w transistor 82331
Contextual Info: QQB PWR-82331 and PWR-82333 ILC DATA DEVICE _ CORPORATIONS_ SMART POWER 3-PHASE MOTOR DRIVES ê: DESCRIPTION APPLICATIONS The PWR-82331 and PW R-82333 are 30 A 3-phase m otor drive hybrids. The PWR-82331 has a +200 V rating and uses M O SFETs in the output stage