IW TRANSISTOR Search Results

BC450

Contextual Info: BC450 PNF SILICON TRANSISTOR « w w w w w w iw iw iw im m w w w w w n n n n n n n n n n n w iw iw iw iw iw w w w w w w w w w w w in n í^ ^ DESCRIPTION P4.68CÛ.18J BC450 is PNP silicon planar transistor designed for use as high voltage driver and output transistor. Particularly

O2-A2

Abstract: V61C16
Contextual Info: iw* VITELIC V61C16 FAMILY HIGH PERFORMANCE LOW POWER 2 K x 8 BIT CMOS STATIC RAM Description Features m • ■ ■ ■ ■ ■ ■ High Speed • Maximum access time of 45/55/70 ns • Equal access and cycle times Low Power • 200 mW typical operating • 0.5 |iW typical standby

KD 334

Contextual Info: SGS-THOMSON BCW30 iW SMALL SIGNAL PNP TRANSISTORS Type M arking BC W 30 C2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING ciR currs LOW LEVEL AUDIO AMPLIFICATION AND SWITCHING INTERNAL SCHEMATIC DIAGRAM

Contextual Info: SGS-THOMSON 2N6059 iW SILICON NPN POWER DARLINGTON TRANSISTOR . . • . ■ ■ SGS-THOMSON PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE A PP LICA TIO N S i LINEAR AND SWITCHING INDUSTRIAL

Contextual Info: 2SA1426 TOSHIBA 2SA1426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • High hpE : hjrE = 100~320 IW Output Applications. Complementary to 2SC3666. 7 .1 MAX MAXIMUM RATINGS (Ta = 25°C)

2SC2641

Abstract: 10ID
Contextual Info: TOSHIBA 2SC2641 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2641 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS Output Power : Po = 6W Min. (f = 470MHz, V e e = 12.6V, Pi = IW) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT

Contextual Info: j à s t Æ Ê T * c g iw c ii H»nilr«nfliirffir coro. CJD122 NPN CJD127 PNP flnWlIII^NniVBwWSwl COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DftKI!" g8FW DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured

Contextual Info: Afa Iw V f Satellite C om m unications Power Transistor PH 1600-1.5 1.5 Watts, 1.55-1.65 GHz Features Outline Drawing • CW Operation • Internal Impedance Matching • Common Base Configuration • Multilayer Metal / Ceramic Package • Gold Metallization System

3gg22

Abstract: itt 2222 ITT 2222 A Philips 809 08003 mcb882 BLF277 sot-119 Q03GG1 MCB86
Contextual Info: 003001Ô Philips Semiconductors TST IW A P X Product specification VHF power MOS transistor BLF277 N AMER PHILIPS/DISCRETE FE A T U R E S b^E ]> PIN CONFIGURATION • High power gain • Easy power control • Gold metallization ensures excellent reliability

Contextual Info: BF821 BF823 SILICON EPITAXIAL TRANSISTORS P-N-P transistors Marking BF821 = IW BF823 = ÎY PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _J.0_ 2.8 0.14 Ö.09 0.48 0.38 0.70 0.50 3 Pin configuration 1.4 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 1.2 2.4 R0.1 .004 '

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon MMBT6428LT1 MMBT6429LT1 COLLECTOR 3 % EMITTER 1 iW 2 MAXIMUM RATINGS Symbol 6428LT1 6429LT1 Unit C ollector-Em itter Voltage Rating VCEO 50 45 Vdc C o lle c to r-B a s e Voltage VCBO 60

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VHF/UHF Transistor MMBT918LT1 NPN Silicon COLLECTOR 3 2 EMITTER MAXIMUM RATINGS 1% iW 2 Rating Symbol Value Unit CoHector-Emitter Voltage VCEO 15 Vdc C ollector-B ase Voltage VCBO 30 Vdc E m itter-B ase Voltage vebo 3.0

15D transistor

Abstract: 2DI75M-050 1S120 yv-10
Contextual Info: 2DI75M-050 75A % ± '< r7-*:ï>n.-)V IW fé 'tffè : Outline Drawings POWER TRANSISTOR MODULE Features High DC Current Gain ¡ ft& T A v+ 'sV High Speed Switching IffliÊ : A pplications ÿ lÏÏ'f> '< —9 General Purpose Inverter Uninterruptible Power Supply

Contextual Info: N AUER PHXLIPS/DISCRETE ooa7Dao 4 fl?D D y v r « a IW T - Z h o l PLASTIC RF TRANSISTORS INSTRUMENTATION' COMMUNICATIONS • Wideband Preamplifiers Oscilloscopes • Spectrum Analyzers ^ Frequency .Counters •' •VHF/UHF Amplifiers • Log Amplifiers /c-» CATV/MATV Amplifiers

buy48

Contextual Info: SGS-THOMSON BUY48 iW SILICON NPN TRANSISTOR . . • . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS i GENERAL PURPOSE SWITCHING C 3 DESCRIPTION 2 The BUY48 is a silicon epitaxial planar NPN transistor in jedecTO-39 metal case. It is used in

transistor 1107

Abstract: 1109L
Contextual Info: TOSHIBA RN1107-RN1109 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RM11D7mg •RM R« M « ■w 1 ■ i■n iw r a g ■ ■v 1 ■ in ■ q v ■* ■V ■ ■ SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS.

str f 6238

Abstract: XS800NS Frequency Locked Loop FLL DC Motor Speed Controller
Contextual Info: 5 7 . SGS-THOMSON L6238 iW SENSORLESS SPINDLE MOTOR CONTROLLER PRODUCT PREVIEW 2.5A, THREE-PHASE OUTPUT DRIVE PRECISION DIGITAL PLL FULLY-INTEGRATED ALIGN + GO START-UP ALGORITHM D IG ITALBEM F PROCESSING MASTER/SLAVE SYNCHRONIZATION BIDIRECTIONAL SERIAL PORT

2-7D101A

Abstract: 2SA1426 2SC3666
Contextual Info: TOSHIBA 2SA1426 2 S A1 426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • High hpE : h]?E —100~320 IW Output Applications. Complementary to 2SC3666. 7.1 MAX 2.7MAX M A X IM U M RATINGS (Ta = 25°C)

transistor fn 155

Contextual Info: HMSn'wìnt-t r* «nnS 140Commerce Drive iW llC f U S B n it Montgomeryville, PA18936-1013 Tei: 215 631-9840 F?»#>&s&P&nüerùtt£>v SD 1143 RF & MICROWAVE TRANSISTORS 130. 230MHz FM MOBILE APPLICATIONS FM CLASS C TRANSISTOR FREQUENCY 175MHz VOLTAGE 12.5V

Gex DIODE

Contextual Info: 6D I50M -050 50 a IW f i T t i i • Outline Drawings POWER TRANSISTOR MODULE ■ t t f t : Features • SfthpE • High DC Current Gain High Speed Switching : Applications • illffl- fV - 'i—^ General Purpose Inverter • mznwM Uninterruptible Power Supply

C5001

Contextual Info: SGS-THOMSON 2N5154 iW SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR A PP LICA TIO N S • GENERAL PURPOSE SWITCHING D ESCRIP TIO N The 2N5154 is a silicon epitaxial planar NPN transistors in Jedec TO-39 metal case intended tor use in switching applications.

MRD810

Contextual Info: M R D 8 1 0 silicon 35 VOLTS NPN SILICON PHOTO TRANSISTOR NPN SILICON PHOTO TRANSISTOR 2 5 0 M IL L IW A T T S . . . designed fo r application in card and tape readers, optica! char­ acter recognition, shaft encoders, industrial inspection, processing and

ff 0401

Contextual Info: SGS-THOMSON 2N5657 iW SILICON NPN TRANSISTOR . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR D ESCRIP TIO N The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended tor use output amplitiers, low current, high voltage converters and AC line relays.

2N 5682

Abstract: transistor 2n 568
Contextual Info: SGS-THOMSON 2N5681 2N5682 iW SILICON NPN TRANSISTOR . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR A PP LICA TIO N S • GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIERS ^ 3 D ESCRIP TIO N The 2N5681, 2N5682 are high voltage silicon epitaxial planar NPN transistors in Jedec TO-39