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IXYS Corporation IXBK64N250 IGBTs BIMOSFET 2500V 75A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXBK64N250		44			1 $145.02 10 $128.54 100 $128.54 1000 $128.54 10000 $128.54	Buy Now
TTI ()	IXBK64N250	Tube			300	1 - 10 - 100 - 1000 $171.38 10000 $171.38	Buy Now
	IXBK64N250	Tube			300	1 - 10 - 100 - 1000 $171.38 10000 $171.38	Buy Now
TME	IXBK64N250				1	1 $171.33 10 $143.63 100 $138.5 1000 $138.5 10000 $138.5	Get Quote
New Advantage Corporation	IXBK64N250		20		1	1 $372.51 10 $372.51 100 $343.86 1000 $343.86 10000 $343.86	Buy Now
Littelfuse Inc IXBK64N250 Disc Igbt Bimsft-Veryhivolt To-264(3)/ Tube \|Littelfuse IXBK64N250
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXBK64N250	Bulk			300	1 - 10 - 100 $134.7 1000 $134.7 10000 $134.7	Buy Now
RS	IXBK64N250	Bulk		8 Weeks	300	1 - 10 - 100 - 1000 $186.87 10000 $180.91	Get Quote

IXBK64N250 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
IXBK64N250		IXYS	BIMOSFET 2500V 75A MONO TO-247AD		Original	PDF	197.34KB

IXBK64N250 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXBX64N250 Abstract: IC100 IXBK64N250 PLUS247 Contextual Info: High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC110 = 2500V = 64A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXBK64N250 IXBX64N250 IC110 O-264 IC100 64N250 5-10-A IXBX64N250 IC100 IXBK64N250 PLUS247	PDF
IXBX64N250 Abstract: IXBK64N250 64N250 IXBX 64N250 PLUS247 128a Contextual Info: Preliminary Technical Information High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC25 = 2500 = 75 ≤ 3.0 VCE sat Monolithic Bipolar MOS Transistor V A V TO-264 (IXBK) Symbol Test Conditions VCES TJ = 25°C to 150°C VGES Maximum Ratings 2500	Original	IXBK64N250 IXBX64N250 O-264 IC110 PLUS247TM 64N250 IXBX64N250 IXBK64N250 64N250 IXBX 64N250 PLUS247 128a	PDF
64n250 Contextual Info: High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC110 = 2500V = 64A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IXBK64N250 IXBX64N250 IC110 O-264 IC100 64N250 8-12-11B	PDF
Contextual Info: High Voltage, High Gain BiMOSFETTM VCES IC110 IXBK64N250 IXBX64N250 = 2500V = 64A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	IC110 IXBK64N250 IXBX64N250 O-264 IC100 64N250 8-12-11B	PDF
IXGF30N400 Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 Contextual Info: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers	Original	O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250	PDF
IXBK55N300 Abstract: IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250 Contextual Info: POWER Efficiency Through Technology N E W PR O D U C T BR I E F High Voltage BiMOSFETsTM IXYS expands its bimosfet tm porTfolio to 3kv with the introduction of its new hv bimosfetsTM september 2009 OVERVIEW IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking	Original	E153432) com/IXAN0022 IXBK55N300 IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250	PDF