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    IXBN75N170A Search Results

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    IXBN75N170A Price and Stock

    IXYS Corporation IXBN75N170A

    IGBT MOD 1700V 75A 625W SOT227B
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    Future Electronics IXBN75N170A Tube 26 Weeks 10
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    TME IXBN75N170A 2 1
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    IXBN75N170A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXBN 75N170A IXYS BIMOSFET Monolithic Bipolar MOS Transistor Original PDF
    IXBN75N170A IXYS Bipolar MOS Transistor Original PDF

    IXBN75N170A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor VCES IC90 IXBN75N170A VCE sat tfi(typ) = = ≤ = 1700V 42A 6.00V 60ns SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBN75N170A OT-227B, E153432 Kelv60V 75N170A PDF

    IXBN75N170A

    Abstract: IXBN 75N170A transistor 600 volts.50 amperes
    Text: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBN75N170A VCES IC90 VCE sat tfi(typ) = = ≤ = 1700V 42A 6.00V 60ns SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBN75N170A OT-227B, E153432 75N170A IXBN75N170A IXBN 75N170A transistor 600 volts.50 amperes PDF