IXFH 26 N 49 Search Results

gs 1117 ax

Abstract: 1XFH Diode SMD SJ 97 Diode SMD SJ 24 Diode SMD SJ 0B
Contextual Info: v DSS HiPerFET Power MOSFETs DS on 500 V 21 A 0.25 a 500 V 24 A 0.23 Q 500 V 26 A 0.20 il IXFH/IXFM21 N50 IXFH/IXFM 24 N50 IXFH26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family p ^D25 t„ < 250 ns ?D G As Maximum Ratings Symbol Test Conditions

DSE 130 -06A

Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01

Contextual Info: VDSS HiPerFETTM Power MOSFETs Q-Class IXFH/IXFT 30N50Q IXFH/IXFT 32N50Q Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C IDM TC = 25°C,

IXFH120N15P

Contextual Info: PolarHTTM HiPerFET Power MOSFET IXFH 120N15P IXFT 120N15P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ

Contextual Info: PolarHTTM HiPerFET Power MOSFET IXFH 120N15P IXFT 120N15P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ

32N50Q

Abstract: IXFH32N50Q
Contextual Info: HiPerFETTM Power MOSFETs Q-Class IXFH 32N50Q IXFT 32N50Q Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM IAR TC = 25°C, pulse width limited by TJM

32N50Q

Contextual Info: HiPerFETTM Power MOSFETs Q-Class IXFH 32N50Q IXFT 32N50Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C TC = 25°C, pulse width limited by TJM

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

Contextual Info: HiPerFETTM Power MOSFETs IXFH23N80Q IXFT23N80Q Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS = 800 V ID25 = 23 A RDS on = 0.42 Ω trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

IXFH23N80Q

Abstract: transistor N 343 AD
Contextual Info: HiPerFETTM Power MOSFETs IXFH23N80Q IXFT23N80Q VDSS = 800 V = 23 A ID25 RDS on = 0.42 Ω Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

1XFH12n100

Abstract: transistor 13n80
Contextual Info: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure

IXFP76N15T2

Abstract: IXFA76N15T2
Contextual Info: Preliminary Technical Information IXFA76N15T2 IXFP76N15T2 IXFH76N15T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 = 150V = 76A   20m RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier TO-263 AA (IXFA) G S D (Tab) TO-220AB (IXFP)

PC MOTHERBOARD IBM BARBADOS

Abstract: APC UPS CIRCUIT DIAGRAM ibm barbados motherboard PC MOTHERBOARD BARBADOS IBM APC UPS es 500 CIRCUIT DIAGRAM inverter welding machine circuit board UPS APC CIRCUIT manual repair offline ups 600 va APC back UPS RS 800 APC Back ES 500 UPS
Contextual Info: Embedded Modem + Internet Applications MT5634SMI-IP Developer’s Guide ModemModule ModemModule IP Developer’s Guide Embedded Modem + Internet Applications MT5634SMI-IP PN S000241B, Revision B 6/25/02 Copyright This publication may not be reproduced, in whole or in part, without prior expressed written permission from MultiTech Systems, Inc. All rights reserved.