30N60B Search Results
30N60B Price and Stock
Rochester Electronics LLC HGTG30N60B3IGBT 600V 60A TO-247 |
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HGTG30N60B3 | Tube | 16,153 | 101 |
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IXYS Corporation IXXH30N60B3D1IGBT PT 600V 60A TO-247AD |
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IXXH30N60B3D1 | Tube | 638 | 1 |
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IXXH30N60B3D1 | 401 |
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IXXH30N60B3D1 | Bulk | 139 | 1 |
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IXXH30N60B3D1 | 86 | 1 |
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Rochester Electronics LLC HGT4E30N60B3SIGBT 60A, 600V, N CHANNEL, TO 26 |
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HGT4E30N60B3S | Bulk | 450 | 67 |
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IXYS Corporation IXXQ30N60B3MIGBT 600V 33A TO-3P |
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IXXQ30N60B3M | Tube | 298 | 1 |
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IXXQ30N60B3M |
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IXXQ30N60B3M | 1 |
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Rochester Electronics LLC HGTG30N60B3_NLIGBT NPT 600V 60A TO-247 |
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HGTG30N60B3_NL | Bulk | 51 | 51 |
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30N60B Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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30n60b
Abstract: 30N60 30N60C ic 931
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30N60B 30N60C O-268 O-247 30n60b 30N60 30N60C ic 931 | |
30n60
Abstract: 30N60B2
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30N60B2 IC110 O-220 30n60 30N60B2 | |
30N60B2Contextual Info: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 30N60B2 IXGT 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ |
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30N60B2 IC110 O-268 30N60B2 | |
30n60cContextual Info: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Preliminary Data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW |
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30N60B 30N60C O-247 O-268 | |
Contextual Info: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ |
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30N60B2D1 IC110 | |
Contextual Info: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous |
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30N60B 30N60C O-268 | |
1XYSContextual Info: a ix Y S 1 Preliminary Data Sheet v CES IXGH 30N60B IXGH 30N60BS ^C25 vv CE sat HiPerFAST IGBT = 600 V = 60 A = 1.8 V = 130 ns tfi TO-247 SMD (30N60BS) Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RQE= 1 M il |
OCR Scan |
30N60B 30N60BS 13/10Nm/lb O-247 1XYS | |
30n60b
Abstract: 30n60 TO-247AA 15a020
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30N60BU1 O-268 IC110 O-247 728B1 30n60b 30n60 TO-247AA 15a020 | |
Contextual Info: HiPerFASTTM IGBT with Diode IXGH 30N60BU1 VCES IXGT 30N60BU1 IC25 VCE sat tfi = 600 V = 60 A = 1.8 V = 100 ns TO-268 (IXGT) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous |
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30N60BU1 O-268 IC110 30N60BU1 | |
Contextual Info: I Z II X Y S HiPerFAST IGBT with Diode V.CES IXGH 30N60BD1 IXGT 30N60BD1 600 60 1.8 C25 CE sat V A V 100 ns tfi(typ) Preliminary data sheet Maximum Ratings Symbol TestC onditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i |
OCR Scan |
30N60BD1 O-268 O-247 | |
30N60B2D1
Abstract: ixgh30n60b2d1
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30N60B2D1 IC110 O-247 O-268 728B1 123B1 065B1 ixgh30n60b2d1 | |
Contextual Info: HiPerFASTTM IGBT with Diode VCES = 600 V IC25 = 60 A VCE sat = 1.8 V tfi(typ) = 100 ns IXGH 30N60BD1 IXGT 30N60BD1 Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V |
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30N60BD1 30N60BD1 O-247 O-268 O-268 | |
30N60B
Abstract: 30N60C
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30N60B 30N60C O-247 O-268 30N60C | |
4013V
Abstract: Siemens DIODE E 1220 30N60B2D1
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30N60B2D1 30N60B2D1 IC110 O-247 O-268 4013V Siemens DIODE E 1220 | |
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30N60Contextual Info: OIXYS Prelim inary Data Sheet HiPerFAST IGBT with Diode 30N60BU1 30N60BU1S v CES ^C25 vCE sat tfi 600 V 60 A 1.8 V 130 ns Combi Pack TO-247 SMD (30N60BU1S) Symbol Test Conditions VCES ^ VCGR Maximum Ratings C (TAB) = 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 MO |
OCR Scan |
IXGH30N60BU1 IXGH30N60BU1S O-247 30N60BU1S) IXGH3QN60BU1 IXGH30N6QBU1S 30N60 | |
Contextual Info: Advance Technical Data HiPerFASTTM IGBT IXGH 30N60B2 IXGT 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 |
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30N60B2 IC110 O-268 O-247 | |
30N60BDContextual Info: nixYS Advanced Technical Information HiPerFAST IGBT with Diode IXGH 30N60BD1 IXGT 30N60BD1 ^fi typ Symbol Test Conditions VCEs Tj = 25°Cto 150UC 600 V v CGB T,J = 25cC to 150°C ;R Cat =1 MU 600 V v G ES Continuous +20 V VG EM Transient ±30 V ^C25 Tc =25°C |
OCR Scan |
30N60BD1 30N60BD1 150UC O-268 O-247 15BSC~ 30N60BD | |
30n60Contextual Info: HiPerFASTTM IGBT with Diode IXGH 30N60BD1 VCES IXGT 30N60BD1 I C25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C |
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30N60BD1 O-247 O-268 O-268 30n60 | |
Contextual Info: Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions IXGH 30N60B2D1 VCES IXGT 30N60B2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ |
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30N60B2D1 IC110 O-247 728B1 123B1 728B1 065B1 | |
30N60BD1
Abstract: TO-264 Jedec package outline
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30N60BD1 30N60BD1 TO-264 Jedec package outline | |
30N60B2D1
Abstract: IXGH30N60B2D1 30N60B2D 30n60b 30N60B2 DSEP 12A
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30N60B2D1 IC110 O-247 728B1 123B1 728B1 065B1 IXGH30N60B2D1 30N60B2D 30n60b 30N60B2 DSEP 12A | |
30N60BSContextual Info: HiPerFAST IGBT VCES IXGH 30N60B IXGH 30N60BS ^C25 VCE sat = 600 V = 60 A = 1.8V = 130 ns P relim in ary data Symbol Test Conditions V CES T j = 25°C to 150°C Maximum Ratings 600 V vCGR T j = 25°C to 150“C; RGE = 1 MD 600 V v GES vGEM Continuous ±20 |
OCR Scan |
30N60B 30N60BS O-247 30N60BS) 30N60BS | |
30n60Contextual Info: High Speed IGBT with Diode IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 |
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30N60BD1 30N60BD1 O-247AD O-268 O-264 30n60 | |
30N60BD1
Abstract: ICP-F50
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30N60BD1 O-268 O-247 ICP-F50 |