IXFN SOT227 Search Results

61N50

Abstract: 58N50 D-68623 92810G
Contextual Info: IXFN 58N50 IXFN 61N50 Preliminary Data Sheet VDSS IXFN 58N50 500V IXFN 61N50 500V High Current Power MOSFET N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 500 V V GS Continuous ±20

IXFK110N20

Abstract: 20n20 IXFN120N20 IXFK120N20
Contextual Info: •1IXYS_ ^ m ^ VDSS HiPerFET Power MOSFET IXFN 120N20 IXFN 110N20 IXFK 120N20 IXFK 110N20 Single MOSFET Die Symbol Test Conditions Maximum Ratings IXFK IXFN IXFN 120 110 120 IXFK 110 v DSS TO-264 AA IXFK ?D VoCR Tj = 25°C to 150°C

1xys

Contextual Info: □IXYS IXFN 58N50 IXFN 61N50 Preliminary Data Sheet V DSS IXFN 58N50 500V IXFN 61N50 500V High Current Power MOSFET p ^D25 DS on 58A 61A 85 m£2 75 mû N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS T j = 25°C to 150°C 500 V v DGR

S3 DIODE schottky

Abstract: 100N10S1
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 S2 4 D VDSS ID25 RDS(on) = 100 V = 100 A = 15 mW S3 4(D)

IXFN40N50

Contextual Info: DIXYS IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die rr Test Conditions Maximum Ratings IXFK IXFN IXFN 50 55 50 IXFK 55 Td = 25°C to 150°C T j = 25°C to 150°C 500 500 500 500 V V VGS v GSM Continuous Transient ±20 ¿30 ±20 ±30 V V »D25

S3 DIODE schottky

Abstract: 100N1
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 Parallel, Buck & Boost Configurations for SMPS, PFC & Motor Control Circuits S1 S2 4 D VDSS ID25 RDS(on) = 100 V = 100 A = 15 mW S3 4(D)

200N07

Abstract: 200N06 180N07 IXFN180
Contextual Info: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 Maximum Ratings TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC= 25°C; Chip capability

IXFN180

Abstract: 200N06
Contextual Info: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 Maximum Ratings TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC= 25°C; Chip capability

Contextual Info: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol IXFN 200 N06 IXFN 180 N07 IXFN 200 N07 Maximum Ratings TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient I D25 TC= 25°C; Chip capability

Contextual Info: HiPerFETTM Power MOSFETs IXFN 120N20 VDSS ID25 = 200 V = 120 A = 17 mW Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Preliminary data sheet Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol

Contextual Info: HiPerFETTM Power MOSFETs IXFN 120N20 VDSS ID25 = 200 V = 120 A = 17 mW Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Preliminary data sheet Maximum Ratings miniBLOC, SOT-227 B (IXFN) E153432 Symbol

43N60

Abstract: 40n60 IXFN40N60 IXFK40N60 IXFK43N60 IXFN43N60
Contextual Info: ADVANCE INFORMATION HiPerFETTM Power MOSFET IXFN 43N60 IXFN 40N60 IXFK 43N60 IXFK 40N60 Single MOSFET Die VDSS I D25 RDS on trr 600V 600V 600V 600V 43A 40A 43A 40A 0.13W 0.15W 0.13W 0.15W 200ns 200ns 200ns 200ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings

50n80

Abstract: 50N80Q2 IXFN50N80Q2
Contextual Info: HiPerFETTM Power MOSFET IXFN 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions

80N50Q2

Abstract: 0169E 123B16
Contextual Info: Advance Technical Information HiPerFETTM Power MOSFET IXFN 80N50Q2 VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol

Contextual Info: Advance Technical Information HiPerFETTM Power MOSFET IXFN 80N50Q2 VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV /dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol

IXYS CS 30-12

Abstract: 36N100
Contextual Info: IXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 36N100 1000 V 36 A 0.24 Q VDSS I D25 R DS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions v DSS

106N20

Abstract: 90N20 IXFN 360 D-68623
Contextual Info: IXFK 90N20 IXFN 106N20 Preliminary Data VDSS TM HiPerFET Power MOSFET ID25 RDS on trr IXFK 90N20 200V 90A 23mΩ 200ns IXFN 106N20 200V 106A 20mΩ 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions

Contextual Info: HiPerFETTM Power MOSFETs IXFN 100N10S1 IXFN 100N10S2 with Schottky Diodes IXFN 100N10S3 m~ê~ääÉäI=_ìÅâ=C=_ççëí=`çåÑáÖìê~íáçåë Ñçê=pjmpI=mc`=C=jçíçê=`çåíêçä=`áêÅìáíë S1 VDSS ID25 RDS on S2 QEaF = 100 V = 100 A Ω

Contextual Info: HiPerFETTM Power MOSFET IXFN 72N55Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 550 V ID25 = 72 A Ω RDS on = 72 mΩ ≤ 250 ns trr Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions

ixys ixfn 55n50

Abstract: 50n50 IXFK50N50 IXFN50N50 IXFK55N50 IXFN55N50
Contextual Info: HiPerFETTM Power MOSFET IXFN IXFN IXFK IXFK Single Die MOSFET 55N50 50N50 55N50 50N50 VDSS ID25 RDS on 500V 500V 500V 500V 55A 50A 55A 50A 80mΩ 100mΩ 80mΩ 100mΩ trr 250ns 250ns 250ns 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK)

80N50P

Abstract: IXFN 80N50P E153432
Contextual Info: IXFN 80N50P Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 80N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

ixys ixfn 55n50

Abstract: ixys ixfn55n50 IXFK50N50
Contextual Info: HiPerFETTM Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die VDSS I D25 RDS on t rr 500V 500V 500V 500V 55A 80mW 250ns 50A 100mW 250ns 55A 80mW 250ns 50A 100mW 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings

Contextual Info: HiPerFETTM Power MOSFET IXFN 72N55Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 550 V ID25 = 72 A Ω RDS on = 72 mΩ ≤ 250 ns trr Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions

73N30

Abstract: 1M300 "SOT-227 B" dimensions 6206 sot 89 D-68623 ixfk73n30
Contextual Info: IXFK 73N30 IXFN 73N30 Preliminary Data VDSS = 300V ID25 = 73A HiPerFETTM Power MOSFET RDS on = 45mΩ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr ≤ 200ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C