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    IXFN170N10 Search Results

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    IXFN170N10 Price and Stock

    IXYS Corporation IXFN170N10

    MOSFET N-CH 100V 170A SOT-227B
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    Quest Components IXFN170N10 32
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    IXFN170N10 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFN170N10 IXYS HiPerFET Power MOSFET Original PDF
    IXFN170N10 IXYS 100V HiPerFET power MOSFET Original PDF

    IXFN170N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFN170N10 IXFK170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 200ns 200ns IXFN170N10 IXFK170N10 O-264 170N10 ID125 OT-227 E153432

    IXFN170N10

    Abstract: 170N10 125OC IXFK170N10
    Text: HiPerFETTM Power MOSFET IXFN170N10 IXFK170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR T J = 25°C to 150°C


    Original     		PDF IXFN170N10 IXFK170N10 200ns O-264 170N10 ID125 Figure10. IXFN170N10 170N10 125OC IXFK170N10

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFN170N10 IXFK170N10 VDSS I D25 RDS on trr 100V 100V 170A 170A 10mW 10mW 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 VDSS VDGR T J = 25°C to 150°C


    Original     		PDF IXFN170N10 IXFK170N10 200ns O-264 170N10 ID125Â Figure10.

    BHRH

    Abstract: SOT-227 Package IXFK170N10 IXFN170N10 "SOT-227 B" dimensions 125OC 170N10 D125
    Text: ADVANCE INFORMATION HiPerFETTM Power MOSFET VDSS IXFN170N10 IXFK170N10 10mΩ 10mΩ trr 200ns 200ns TO-264 AA IXFK Test Conditions Maximum Ratings IXFK IXFN 170N10 170N10 V DSS V DGR TJ = 25°C to 150°C TJ = 25°C to 150°C 100 100 100 100 V V V GS V GSM


    Original     		PDF IXFN170N10 IXFK170N10 200ns O-264 170N10 BHRH SOT-227 Package IXFK170N10 IXFN170N10 "SOT-227 B" dimensions 125OC 170N10 D125

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    D2562

    Abstract: EE-SS3
    Text: HiPerFET Power MOSFET IXFN170N10 IXFK170N10 vDSS Joîs R 100V 100V 170A 170A 10mQ 10mQ DS on 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Symbol Maximum Ratings IXFK IXFN 170N10 170N10 Test Conditions V V DGfi Ü) Tj = 25°C to 150°C TJ = 25°C to 150°C


    OCR Scan     		PDF IXFN170N10 IXFK170N10 200ns 200ns O-264 170N10 OT-227 D2562 EE-SS3

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS ADVANCE INFORMATION ^D25 100V 100V 170A 170A trr DS on a a IXFN170N10 IXFK170N10 D v DSS E E o o HiPerFET Power MOSFET 200ns 200ns Single MOSFET Die TO-264 AA (IXFK) Symbol v Maximum Ratings IXFK IXFN 170N10 170N10 Test Conditions Td = 25°C to 150°C


    OCR Scan     		PDF IXFN170N10 IXFK170N10 200ns O-264 170N10

    IXTN79N20

    Abstract: IXFN48N50 IXFN120N20 IXFN27N80 IXFN36N60 IXFN73N30 IXTN21N100 IXFN106N20 IXFN130N30 IXFN150N15
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 CunoBbie TpaH3MCTopbi MOSFET b K o p n y c e SOT-227B (ISOTOP) $ M pM bi IXYS C # e p a npM M eH eH M a: n p e o 6 p a 3 0 B a ie n M D C-DC, n po M biw ne rn-ib ie MMnynbCHbie 6jiokm nMTaHMfl, cucTeM bi


    OCR Scan     		PDF OT-227B npe06pa30Baienm flMana30H ot-55Â IXTN21N100 IXFN27N80 IXFN36N60 IXFN48N50 IXFN55N50 IXFN130N30 IXTN79N20 IXFN120N20 IXFN73N30 IXFN106N20 IXFN150N15

    ixfh26n60q

    Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY


    OCR Scan     		PDF SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 T0220AB IRF7319 IRF7413 IRF7455 IRL2203N ixfh26n60q 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671

    170n10

    Abstract: vestas 185H10 197-IX
    Text: ADVANCE INFORMATION v DSS H iP e rF E T Pow er M O SFET 100V 100V 100V IXFK 170N10 100V Single MOSFET Die D ^D 25 185A 170A 185A 170A 1* D S o n 8m£2 10mi2 8mn 10mß 200ns 200ns 200ns 200ns TO-264 AA (IXFK) Symbol v DSS Test Conditions T j = 25°C to 150°C


    OCR Scan     		PDF 185N10 200ns 170N10 200ns 185H10 170H10 vestas 197-IX

    IXFD14N80

    Abstract: CMP 3.48 ixfh50n20 1XFH12N90 IXFN170N10 diode 348 IXFD110N20 IXFD76N07-12 IXFD21N50 IXFH21N50
    Text: OIXYS HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type v c * D6S tN BL tn CMp max *yp * Chip elze Source 3 b e n tlw li« Equivalent device dutaahaet T * * tS O * G out­ line NO PF na 70 0.012 5 4400 200 IX77 8 .8 4 x 7 .1 9


    OCR Scan     		PDF IXFD76N07-12 XFD67N10 IXFD75N10 IXFD170N10 IXFD42N20 IXFD50N20 IXFD68N20 1XFD90N20Q IXFD110N20 IXFD35N30 IXFD14N80 CMP 3.48 ixfh50n20 1XFH12N90 IXFN170N10 diode 348 IXFD76N07-12 IXFD21N50 IXFH21N50

    Untitled

    Abstract: No abstract text available
    Text: n ix Y S HiPerFET Power MOSFET IXFN 170N10 IXFK170N10 VDSS ^D25 100 V 100 V 170 A 170 A p DS on 10 mQ 10 mil Single M O S FE T Die Symbol Test Conditions VDSS v TCB Tj Tj VGS v GSM Continuous Transient Us ® u ® Ur Tc Tc Tc Tc Maximum Ratings IXFK IXFN


    OCR Scan     		PDF IXFN170N10 IXFK170N10 O-264 OT-227 IXFN170N10 100ms

    sot23 BS170

    Abstract: 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET (copTMpoBKa no TOKy lD) Kofl: BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 IRFD320 2N7002 IRFD220 IRFL210 IRFD110 IRLD110 IRFD120


    OCR Scan     		PDF BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 sot23 BS170 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100