Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXFN82N60P Search Results

    SF Impression Pixel

    IXFN82N60P Price and Stock

    Littelfuse Inc IXFN82N60P

    MOSFET N-CH 600V 72A SOT-227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFN82N60P Tube 358 1
    • 1 $35.98
    • 10 $27.642
    • 100 $35.98
    • 1000 $35.98
    • 10000 $35.98
    Buy Now
    RS IXFN82N60P Bulk 8 Weeks 10
    • 1 -
    • 10 $41.8
    • 100 $41.8
    • 1000 $41.8
    • 10000 $41.8
    Get Quote

    IXYS Corporation IXFN82N60P

    MOSFET Modules DIODE Id82 BVdass600
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFN82N60P 160
    • 1 $35.98
    • 10 $27.64
    • 100 $27.02
    • 1000 $27.02
    • 10000 $27.02
    Buy Now
    Newark IXFN82N60P Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now
    Future Electronics IXFN82N60P Tube 46 Weeks 300
    • 1 -
    • 10 $27.26
    • 100 $26.71
    • 1000 $26.5
    • 10000 $26.5
    Buy Now
    IXFN82N60P Tube 46 Weeks 10
    • 1 -
    • 10 $30.96
    • 100 $30.5
    • 1000 $30.11
    • 10000 $30.11
    Buy Now
    TTI IXFN82N60P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $27.02
    • 10000 $27.02
    Buy Now
    TME IXFN82N60P 1
    • 1 $41.91
    • 10 $33.25
    • 100 $33.25
    • 1000 $33.25
    • 10000 $33.25
    Get Quote

    IXYS Integrated Circuits Division IXFN82N60P

    MOSFET MOD.72A 600V N-CH SOT227B HIPERFET CHASSIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXFN82N60P
    • 1 $50.21564
    • 10 $46.9305
    • 100 $46.9305
    • 1000 $46.9305
    • 10000 $46.9305
    Get Quote

    IXFN82N60P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFN82N60P IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 600V 72A SOT-227B Original PDF

    IXFN82N60P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXFN82N60P

    Abstract: IXFN82N60 *2n60P IXFN 82N60P SOT227B package 82N60
    Text: IXFN82N60P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 600 V VGSS Continuous


    Original
    PDF IXFN82N60P 82N60P 7-17-12-A IXFN82N60P IXFN82N60 *2n60P IXFN 82N60P SOT227B package 82N60

    Ixfn82n60p

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFN82N60P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 600 V VGSS Continuous


    Original
    PDF IXFN82N60P 200ns E153432 82N60P 7-17-12-A Ixfn82n60p

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original
    PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

    IXFB100N50P

    Abstract: IXFN60N80P IXFK44N80P IXFK64N60P fast diode SOT-227 IXFN100N50P IXFB60N80P IXFK80N50P IXFX44N80P IXFN82N60P
    Text: HIGH CURRENT POLAR HIPERFET POWER MOSFETS N E W P R O D U C T B R I E F SUMMARY TABLE TM TM SIMPLIFY DESIGN, REDUCE COST AND IMPROVE RELIABILITY FOR HIGH CURRENT/HIGH POWER APPLICATIONS July 2006 Type B PLUS264 Description IXYS’ New High Current PolarHT™ and PolarHV™ Power MOSFETs bring many benefits to the


    Original
    PDF PLUS264 ISOPLUS247TM E153432) IXFB100N50P IXFN60N80P IXFK44N80P IXFK64N60P fast diode SOT-227 IXFN100N50P IXFB60N80P IXFK80N50P IXFX44N80P IXFN82N60P

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original
    PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250