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Littelfuse Inc IXFR24N100Q3 MOSFET N-CH 1000V 18A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR24N100Q3	Tube	367		1	1 $31.52 10 $31.52 100 $20.61633 1000 $20.10025 10000 $20.10025	Buy Now
Newark	IXFR24N100Q3	Bulk			300	1 - 10 - 100 - 1000 $21.07 10000 $21.07	Buy Now
Littelfuse Inc IXFR200N10P MOSFET N-CH 100V 133A ISOPLUS247
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DigiKey	IXFR200N10P	Tube	308		1	1 $19.25 10 $19.25 100 $12.053 1000 $10.75733 10000 $10.75733	Buy Now
Littelfuse Inc IXFR32N80Q3 MOSFET N-CH 800V 24A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR32N80Q3	Tube	300		1	1 $23.63 10 $23.63 100 $22.72333 1000 $22.4825 10000 $22.4825	Buy Now
Littelfuse Inc IXFR15N100Q3 MOSFET N-CH 1000V 10A ISOPLUS247
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DigiKey	IXFR15N100Q3	Tube	300		1	1 $20.74 10 $20.74 100 $13.75967 1000 $13.10233 10000 $13.10233	Buy Now
RS	IXFR15N100Q3	Bulk		8 Weeks	300	1 - 10 - 100 - 1000 $19.26 10000 $18.65	Get Quote
Littelfuse Inc IXFR48N60P MOSFET N-CH 600V 32A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR48N60P	Tube	299		1	1 $20.33 10 $20.33 100 $12.79433 1000 $11.539 10000 $11.539	Buy Now

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IXFR Datasheets (96)

Part	Manufacturer	Description	Datasheet Type	PDF
IXFR100N25	IXYS	250V HiPerFET power MOSFET	Original	PDF
IXFR102N30P	IXYS	PolarHT HiPerFET Power MOSFET	Original	PDF
IXFR10N100F	IXYS	N-channel Power MOSFETs	Original	PDF
IXFR10N100Q	IXYS	1000V HiPerFET power MOSFET	Original	PDF
IXFR120N20	IXYS	200V HiPerFET power MOSFET	Original	PDF
IXFR120N25P	IXYS	PolarHT HiPerFET Power MOSFET	Original	PDF
IXFR12N100F	IXYS	N-channel Power MOSFETs	Original	PDF
IXFR12N100Q	IXYS	1000V HiPerFET power MOSFET	Original	PDF
IXFR140N20P	IXYS	PolarHT HiPerFET Power MOSFET ISOPLUS247	Original	PDF
IXFR140N30P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 70A ISOPLUS247	Original	PDF
IXFR14N100Q2	IXYS	Discrete MOSFETs: HiPerFET Power MOSFETS	Original	PDF
IXFR150N15	IXYS	150V HiPerFET power MOSFET	Original	PDF
IXFR15N100Q3	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 10A ISOPLUS247	Original	PDF
IXFR15N80Q	IXYS	800V HiPerFET power MOSFET	Original	PDF

IXFR16N120P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 9A ISOPLUS247	Original	PDF
IXFR180N06	IXYS	180V HiPerFET power MOSFET	Original	PDF
IXFR180N07	IXYS	100V HiPerFET power MOSFET	Original	PDF
IXFR180N07	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 70V 180A ISOPLUS247	Original	PDF
IXFR180N085	IXYS	85V HiPerFET power MOSFET	Original	PDF
IXFR180N10	IXYS	100V HiPerFET power MOSFET	Original	PDF

IXFR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
24N50 Abstract: 26N50 .24n50 IXFH26N50 IXFR24N50 IXFR26N50 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	26N50 ISOPLUS247TM 24N50 247TM IXFR26N50 IXFR24N50 IXFH26N50 24N50 26N50 .24n50 IXFR24N50 IXFR26N50	PDF
50n50 Abstract: 55N50 150N50 IXFK55N50 Contextual Info: VDSS HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 RDS(on) Ω 100 mΩ Ω 90 mΩ 500 V 43 A 500 V 48 A trr ≤ 250 ns Single Die MOSFET Maximum Ratings ISOPLUS 247TM Symbol Test Conditions VDSS VDGR	Original	ISOPLUS247TM 50N50 55N50 247TM IXFK55N50 50N50 55N50 150N50	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFR 58N20Q ISOPLUS247TM Q-Class Electrically Isolated Back Surface VDSS = = ID25 RDS(on) = 200 V 50 A Ω 40 mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet	Original	58N20Q ISOPLUS247TM 728B1	PDF
150N15 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 150N15 VDSS = 150 V ID25 = 105 A RDS on = 12.5 mW (Electrically Isolated Backside) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	ISOPLUS247TM 150N15	PDF
70N15 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 70N15 ISOPLUS247TM Electrically Isolated Backside trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	70N15 ISOPLUS247TM 250ns 70N15	PDF
ISOPLUS247 Contextual Info: Advanced Technical Information PolarHTTM HiPerFET IXFR 102N30P Power MOSFET VDSS ID25 RDS on trr = = = ≤ 300 V 60 A Ω 36 mΩ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	102N30P ISOPLUS247	PDF
4525G Abstract: ISOPLUS247 Contextual Info: PolarHTTM HiPerFET IXFR 120N25P Power MOSFET VDSS = 250 V ID25 = 61 A Ω RDS on = 27 mΩ Electrically Isolated Tab N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 250 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ	Original	120N25P 4525G ISOPLUS247	PDF
34N80 Abstract: 34N8 Contextual Info: IXFR 34N80 VDSS = 800 HiPerFETTM Power MOSFETs ISOPLUS247TM ID25 = 28 RDS on = 0.24 (Electrically Isolated Backside) V A Ω trr ≤ 250 ns Single MOSFET Die Avalanche Rated Preliminary Data Sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; R GS = 1 MΩ	Original	ISOPLUS247TM 34N80 247TM E153432 34N8	PDF
IXFR140N30 Contextual Info: Preliminary Technical Information VDSS ID25 PolarHVTM HiPerFET IXFR 140N30P Power MOSFET RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = 300 V = 82 A ≤ 26 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode	Original	140N30P ISOPLUS247TM 405B2 IXFR140N30	PDF
44N50 Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 44N50P VDSS ID25 RDS on ISOPLUS247TM trr N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode = 500 V = 24 A Ω < 150 mΩ < 200 ns (Electrically Isolated Back Surface) Symbol Test Conditions	Original	ISOPLUS247TM 44N50P 405B2 44N50	PDF
IXFR32N50 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 500 V 29 A 500 V 30 A trr ≤ 250 ns RDS(on) 0.16 Ω 0.15 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 32N50 247TM IXFR32N50	PDF
IXFR32N50 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 RDS(on) 0.16 Ω 0.15 Ω 500 V 29 A 500 V 30 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 32N50 125OC IXFR32N50	PDF
44N50P Abstract: ISOPLUS247 Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFR 44N50P VDSS ID25 RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = = ≤ ≤ 500 V 24 A 150 m Ω 200 ns N-Channel Enhancement Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS	Original	44N50P ISOPLUS247TM 03-21-06-B 44N50P ISOPLUS247	PDF
10N100 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS VDSS ID25 1000 V 10 A IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface trr £ 200 ns RDS(on) 1.05 W 1.20 W N-Channel Enhancement Mode Avalanche Rated, High dV/dt	Original	12N100Q ISOPLUS247TM 10N100Q 12N100 10N104 IXFR10N100 IXFR12N100 10N100	PDF

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR30N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXFR30N110P 300ns ISOPLUS247 E153432 30N110P	PDF
Contextual Info: □IXYS Advanced Technical Information HiPerFET Power MOSFETs ISOPLUS247™ Q CLASS ix f r DSS D 25 10 A 12N100Q 1000 V IXFR 10N100Q 1000 V 9A Electrically Isolated Back Surface t rr < 200 ns D S (on) 1.05 Q 1.20 Q N-Channel Enhancement Mode Avalanche Rated, HighdV/dt	OCR Scan	ISOPLUS247â 12N100Q 10N100Q 12N100 10N100 IXFR10N100	PDF
30N50 Abstract: IXFR32N50 Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 32N50 IXFR 30N50 Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 500 V 30 A 500 V 29 A trr £ 250 ns RDS(on) 0.15 W 0.16 W Preliminary data Symbol Test Conditions	Original	ISOPLUS247TM 32N50 30N50 30N50 IXFR32N50	PDF
80N60 Contextual Info: Advance Technical Information IXFR80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 48A Ω 76mΩ 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFR80N60P3 250ns ISOPLUS247 E153432 80N60P3 80N60	PDF
I 508 V Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 36N50P VDSS ID25 RDS on trr ISOPLUS247TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 24 A ≤ 200 mΩ Ω ≤ 250 ns (Electrically Isolated Back Surface) Symbol	Original	ISOPLUS247TM 36N50P I 508 V	PDF
Contextual Info: Advanced Technical Information IXFR 150N15 VDSS = 150 HiPerFETTM Power MOSFETs ISOPLUS247TM V ID25 = 105 A RDS on = 12.5 mW (Electrically Isolated Backside) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	ISOPLUS247TM 150N15 247TM	PDF
40N50Q2 Contextual Info: HiPerFETTM Power MOSFET Q2-Class VDSS ID25 IXFR40N50Q2 RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr = = ≤ ≤ 500V 29A Ω 170mΩ 250ns ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings	Original	IXFR40N50Q2 250ns ISOPLUS247 E153432 40N50Q2 05-28-08-C 40N50Q2	PDF
40n50 Abstract: ISOPLUS247 IXFR40N50Q2 40N50Q2 Contextual Info: HiPerFETTM Power MOSFET Q2-Class IXFR40N50Q2 VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr = = ≤ ≤ 500V 29A Ω 170mΩ 250ns ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings	Original	IXFR40N50Q2 250ns ISOPLUS247 E153432 40N50Q2 05-28-08-C 40n50 ISOPLUS247 IXFR40N50Q2 40N50Q2	PDF
64N50P Abstract: ISOPLUS247 IXFR64N50P 64N50 50NC50 Contextual Info: IXFR64N50P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 500V 37A Ω 95mΩ 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFR64N50P 200ns ISOPLUS247 E153432 64N50P ISOPLUS247 IXFR64N50P 64N50 50NC50	PDF
IXFR140N30 Abstract: IXFR140N30P ISOPLUS247 1M300 Contextual Info: IXFR140N30P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 300V 70A Ω 26mΩ 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFR140N30P 200ns ISOPLUS247 E153432 140N30P 5-13-08-B IXFR140N30 IXFR140N30P ISOPLUS247 1M300	PDF

IXFR Search Results

IXFR Price and Stock

Littelfuse Inc IXFR24N100Q3

Littelfuse Inc IXFR200N10P

Littelfuse Inc IXFR32N80Q3

Littelfuse Inc IXFR15N100Q3

Littelfuse Inc IXFR48N60P

IXFR Datasheets (96)

IXFR Datasheets Context Search

24N50

50n50

150N15

70N15

ISOPLUS247

4525G

34N80

IXFR140N30

44N50

IXFR32N50

IXFR32N50

44N50P

10N100

30N50

80N60

I 508 V

40N50Q2

40n50

64N50P

IXFR140N30