IXFR140N30 Search Results

IXFR140N30 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFR140N30P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 70A ISOPLUS247	Original	PDF		5

IXFR140N30 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXFR140N30 Abstract: IXFR140N30P ISOPLUS247 1M300 Contextual Info: IXFR140N30P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 300V 70A Ω 26mΩ 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFR140N30P 200ns ISOPLUS247 E153432 140N30P 5-13-08-B IXFR140N30 IXFR140N30P ISOPLUS247 1M300	PDF
Contextual Info: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFR140N30P RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 300V 70A Ω 26mΩ 200ns N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXFR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFR140N30P 200ns ISOPLUS247 E153432 140N30P 5-13-08-B	PDF
IXFR140N30 Contextual Info: Preliminary Technical Information VDSS ID25 PolarHVTM HiPerFET IXFR 140N30P Power MOSFET RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = 300 V = 82 A ≤ 26 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode	Original	140N30P ISOPLUS247TM 405B2 IXFR140N30	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor	PDF
Contextual Info: VDSS ID25 PolarHVTM HiPerFET IXFR 140N30P Power MOSFET RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = 300 V = 70 A ≤ 26 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	140N30P ISOPLUS247TM IXFR140N30P	PDF
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p	PDF
IXFB100N50P Abstract: IXFN60N80P IXFK44N80P IXFK64N60P fast diode SOT-227 IXFN100N50P IXFB60N80P IXFK80N50P IXFX44N80P IXFN82N60P Contextual Info: HIGH CURRENT POLAR HIPERFET POWER MOSFETS N E W P R O D U C T B R I E F SUMMARY TABLE TM TM SIMPLIFY DESIGN, REDUCE COST AND IMPROVE RELIABILITY FOR HIGH CURRENT/HIGH POWER APPLICATIONS July 2006 Type B PLUS264 Description IXYS’ New High Current PolarHT™ and PolarHV™ Power MOSFETs bring many benefits to the	Original	PLUS264 ISOPLUS247TM E153432) IXFB100N50P IXFN60N80P IXFK44N80P IXFK64N60P fast diode SOT-227 IXFN100N50P IXFB60N80P IXFK80N50P IXFX44N80P IXFN82N60P	PDF