IXGB16N60R2 Search Results

Contextual Info: □IXYS IXGB16N60R2 Dual Independent IGBTs and Diodes in Power SIP VCES C25 VCE sat i J Advanced data = 600 V = 16 A = 2.5 V 'I I I1 ' •! i : I; ■ ' 1 2 3 4 5 6 7 8 9 10 11 12 Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR

IXGB16N60R2

Abstract: A2 082
Contextual Info: IXGB16N60R2 VC E S IC25 Dual Independent IGBTs and Diodes in Power SIP = 600 V = 16 A V CE sat = 2.5 V Power SIP Advanced data Symbol Maximum Ratings Test Conditions v CES Td = 25°C to 150°C 600 V V"CG R Tj = 25°C to 150°C; RGE = 1 MO 600 V v GES Continuous

SAA 1041

Contextual Info: IXGB16N60R2 VCES IC25 Dual Independent IGBTs and Diodes in Power SIP V CE sat = 600 V = 16 A = 2.5 V Power SIP Advanced data Maximum Ratings Symbol Test Conditions vCES vCGR vGES vGEM Tj = 25°C to 150°C *C25 ^C60 u ^CM Tc = 25°C 16 Tc = 60°C 12 SSOA (RBSOA)

30n50 mosfet

Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
Contextual Info: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600