IXGH10N300 Search Results

IXGH10N300 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXGH10N300		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 18A 100W TO247AD	Original	PDF		5

IXGH10N300 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Advance Technical Information High Voltage IGBT VCES = 3000V IC90 = 10A VCE sat ≤ 3.5V IXGH10N300 For Capacitor Discharge Applications TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings VGES	Original	IXGH10N300 O-247 062in. 10N300	PDF
IXGH10N300 Abstract: 1200v 30A to247 20A400 ixys ixgh10n300 Contextual Info: Advance Technical Information IXGH10N300 High Voltage IGBT VCES = 3000V = 10A IC90 VCE sat ≤ 3.5V For Capacitor Discharge Applications TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings VGES	Original	IXGH10N300 O-247 062in. 10N300 IXGH10N300 1200v 30A to247 20A400 ixys ixgh10n300	PDF
IXGF30N400 Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 Contextual Info: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers	Original	O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: Advance Technical Information High Voltage IGBT VCES = 3000V IC90 = 10A VCE sat ≤ 3.5V IXGH10N300 For Capacitor Discharge Applications TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings VGES

Original

IXGH10N300 O-247 062in. 10N300

PDF

IXGH10N300

Abstract: 1200v 30A to247 20A400 ixys ixgh10n300
Contextual Info: Advance Technical Information IXGH10N300 High Voltage IGBT VCES = 3000V = 10A IC90 VCE sat ≤ 3.5V For Capacitor Discharge Applications TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings VGES

Original

IXGH10N300 O-247 062in. 10N300 IXGH10N300 1200v 30A to247 20A400 ixys ixgh10n300

PDF

IXGF30N400

Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
Contextual Info: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers

Original

O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250

PDF