IXGH24N60 Search Results

24N60

Abstract: IXGH24N50B IXGH24N60B
Contextual Info: HiPerFASTTM IGBT IXGH24N50B IXGH24N60B VCES IC 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings 24N50 24N60 TO-247 AD VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

c2548

Abstract: IXGH24N50BU1 IXGH24N60BU1
Contextual Info: HiPerFASTTM IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 Combi Pack VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25°C to 150°C 500 VCGR TJ = 25°C to 150°C; RGE = 1 MW

W2515

Abstract: IXGH24N50BU1 IXGH24N60BU1
Contextual Info: HiPerFASTTM IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 Combi Pack VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25°C to 150°C 500 VCGR TJ = 25°C to 150°C; RGE = 1 MW

Contextual Info: Advance Technical Information High-Gain IGBTs VCES IC110 VCE sat tfi(typ) IXGP24N60C4 IXGH24N60C4 High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-220AB (IXGP) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

diode DSDI 9

Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A
Contextual Info: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B

6G E 2080 diode

Abstract: IXGH24N50BU1 IXGH24N60BU1 24n60
Contextual Info: v CES HiPerFAST IGBT with Diode Symbol IXGH24N50BU1/S IXGH24N60BU1/S Maximum Ratings Test Conditions 24N50 Tj = 25“C to 150°C 500 600 V vCGfl vGES vGEM Tj = 25°C to 150°C; RaE = 1 MQ 500 600 V Continuous ±20 V Transient ±30 V ^C25 *C90 ^CM T c = 25°C

Contextual Info: Advance Technical Information IXGP24N60C4 IXGH24N60C4 High-Gain IGBTs VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-220AB (IXGP) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IXGH24N60C4D1

Abstract: 24N60C4D1 G24N60
Contextual Info: High-Gain IGBT w/ Diode IXGH24N60C4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM

IC110

Abstract: IXGH24N60C4 IXGP24N60C4
Contextual Info: Advance Technical Information IXGP24N60C4 IXGH24N60C4 High-Gain IGBTs VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-220AB (IXGP) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

smd diode JC 0p

Abstract: DIODE SMD GEM IXGH24N60AU1S
Contextual Info: Hi Per FAST IGBT with Diode IXGH 24N60AU1 IXGH24N60AU1S CES ^C25 v CE sat Combi Pack tfi = = = = 600 V 48 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v*CGR ^ = 25°C to 150°C; RGE = 1 Mi2 600

GEM X 365

Abstract: IXGH24N60B 24N60 IXGH24N50B zr smd
Contextual Info: Prelim inary data HiPerFAST IGBT IXGH24N50B IXGH24N60B V CES ^C 25 VCE(sat) 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns TO-247 SMD (24N*BS) Znr Symbol Test Conditions Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C 500 600 V Vcon Tj = 25°C to 150°C; RGE = 1 MQ

.24n50

Abstract: xgh2 IXGH24N50BU1 IXGH24N60BU1
Contextual Info: Preliminary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES *C 25 VCE(sat) t. 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack T0-247 SMD (24N*BU1 S) Symbol TestConditions I C (TAB) Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C

24N50

Abstract: IXGH24N50B IXGH24N60B
Contextual Info: HiPerFAST IGBT V CES IXGH24N50B/S IXGH24N60B/S Maximum Ratings Symbol Test Conditions Vces Tj = 25°C to 150°C 500 600 V v CGfl Tj = 25°C to 150°C; Rge = 1 M fi 500 600 V v GES C ontinuous ±20 V v GEM T ransient ±30 V 'c25 T c = 25°C 48 A 'c90 T c = 90°C

IXGH24N60BU1

Abstract: 24N50 HIPERFAST IGBT WITH DIODE 24N60 IXGH24N50BU1
Contextual Info: DIXYS Prelim inary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES ^C 25 V CE(sat) t,i 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack TO-247 SMD (24N*BU1S) U Symbol Test Conditions 24N50 24N60 V CES ^ = 25 °C to 150°C 500 600

24N60

Abstract: IXGH24N50B IXGH24N60B ixgh24N60
Contextual Info: Preliminary data HiPerFAST IGBT IXGH24N50B IXGH24N60B VoES 'c 25| V CE(sat t« 500 V 48 A 2.3 V 80 ns 600 V 48 A 2.5 V 80 ns T0-247 SMD (24N*BS) f C (TAB) < Symbol Test C onditions > Maximum Ratings v CES Td = 25°C to 150°C VC3R T.J = 25°C to 150°C; RbE = 1

IXGH24N60C4

Abstract: IXGP24N60C4
Contextual Info: Advance Technical Information IXGA24N60C4 IXGP24N60C4 IXGH24N60C4 High-Gain IGBTs VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-263 (IXGA) G E C (Tab) TO-220 (IXGP) Symbol Test Conditions Maximum Ratings VCES VCGR

24N60

Abstract: IXGH24N60BU1
Contextual Info: □IXYS HiPerFAST IGBT w i t h Diode Combi Pack ix g h 2 4 n sobui IXGH24N60BU1 v CES ^C 25 V* CE(sat) 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns P re lim in a ry d a ta Symbol Test Conditions Maximum Ratings 24N50 24N60 G = Gate, C = Collector, E = Emitter,

24N60

Abstract: IXGH24N60B 24N5 IXGH24N50B 24N50
Contextual Info: HiPerFASTTM IGBT IXGH24N50B IXGH24N60B VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings 24N50 24N60 TO-247 AD VCES T J = 25°C to 150°C 500 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW

24N60C4D1

Abstract: G24N60
Contextual Info: High-Gain IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXGH24N60C4D1 High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM

igbt to247

Abstract: s9011 IXGH24N60AU1S ixgh24N60
Contextual Info: HiPerFAST IGBT with Diode IXGH24N60AU1 IXGH24N60AU1S v CES ^C25 v CE sat t- Symbol Test Conditions v CES v CGR T j = 2 5 °C to 1 5 0 °C 600 V Tj = 25°C to 150°C; RQE = 1 M il 600 V Maximum Ratings v GES Continuous ±20 V v GEM T ransient ±30 V ^C25

e5200

Abstract: IXGH24N50B IXGH24N60B
Contextual Info: OIXYS V CES ^C 25 V CE(sat) 500 V 48 A 2.3 V 80 ns 600 V 48 A 2.5 V 80 ns HiPerFAST IGBT IXGH24N50B IXGH24N60B Preliminary data Symbol TO-247 AD Test Conditions Maximum Ratings 24N50 24N60 V CES T j = 25°C to 150°C 500 600 V V CGR T,J = 25°C to 150°C; F be

IXGH24N60B

Abstract: RG10
Contextual Info: HiPerFASTTM IGBT IXGH 24N60B VCES IC25 VCE sat tfi = = = = 600 48 2.3 80 V A V ns Preliminary Data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30

931 diode smd

Abstract: g20n60
Contextual Info: □ IXYS V CES IXGH 24N60AU1 IXGH 24N60AU1S ^C25 V CE sat t fi HiPerFAST IGBT with Diode Combi Pack Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V vWGES Continuous ±20 V V* GEM Transient

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision