IXGH28N30 Search Results

ajw smd

Abstract: SMD ajw
Contextual Info: □ IXYS PRELIMINARY DATA SHEET IXGH28N30 IXGH28N30S HiPerFAST IGBT Symbol Test C onditions V CES Td = 25°C to 150°C V CGR « M aximum Ratings 300 V Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20 V v Transient ±30 V GEM ^C25 Tc = 25°C

Contextual Info: OIXYS PRELIMINARY DATA SHEET IXGH28N30A IXGH28N30AS HiPerFAST IGBT \ CES IC25 * CE sat typ. W) Symbol Test Conditions VCES ^ = 25°C to 150°C 300 V VCGR ^ = 25°C to 150°C; RGE = 1 MO 300 V v GES Continuous ±20 V VœM Transient ±30 V *C25 Tc = 25° C

SMD ajw

Abstract: ajw smd ajw 35
Contextual Info: □ IXYS PRELIM IN ARY DATA SHEET IXGH28N30A IXGH28N30AS HiPerFAST IGBT Symbol Test Conditions V CES Td = 25°C to 150°C V CGR « Maximum Ratings 300 V Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C

Contextual Info: OIXYS PRELIMINARY DATA SHEET IXGH28N30 IXGH28N30S HiPerFAST IGBT vCES ^C25 v* CE sat typ ^fi(typ) Symbol Test Conditions v CES ^ = 25°C to 150°C 300 V VCGR ^ = 25°C to 150°C; RGE = 1 MO 300 V VGES Continuous ±20 V VœM Transient ±30 V Tc = 25° C

Contextual Info: O IX Y S PRELIMINARY DATA SHEET IXGH28N30B IXGH28N30BS HiPerFAST IGBT vCES ^C25 vCE sat typ *fl(typ) Symbol Test Conditions V CES T j = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MO 300 V v GES Continuous ±20 V VœM Transient ±30 V Tc = 25° C

AJW SMD

Abstract: SMD ajw
Contextual Info: □ IXYS PRELIM INA RY DATA SHEET IXGH28N30B IXGH28N30BS HiPerFAST IGBT Symbol Test Conditions V CES Td = 25°C to 150°C V CGR « Maximum Ratings 300 V Td = 25°C to 150°C; RGE = 1 M£i 300 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

IXGD32N60B-5X

Abstract: ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B
Contextual Info: Insulated Gate Bipolar Transistors IGBT-Chips Type VCES VCE sat @ IC Cies typ. tfi typ. ns Chip type Chip size dimensions High Speed Low VCE(sat) TJM = 150°C mm Source bond wire recommend Equivalent device data sheet Dim. outline No. V V A pF mils IXGD28N30-43

IXGD40N60A

Abstract: 1XGH10N60 xgh10n60a IXGD30N60 IXGD10N60 IXGH40N60 IXGH50N60A 1X57 IXGD40N60 IXGH60N60
Contextual Info: IXYS Insulated Gate Bipolar Transistors IGBT-Chips Type e» High Speed Low T j. s is ir c £ tn typ 28°C ns C hip typ V V A S* IXGD28N30 IXGD40N30 300 1.8 1.45 20 20 1500 2500 180 220 1X43 1X57 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60

IXFd50n20

Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
Contextual Info: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type

IXGH24N50B

Abstract: IXGH50N60B IXGH32N60B IXGH50N60A ixgh24n60a equivalent IXGH24N60A IXGH17N100
Contextual Info: nixYS Insulated Gate Bipolar Transistors IGBT-Chips v Type •• c «V- Chip typ - tn » Chip s o b dbnemtons Source bm d wire »C Tj„ = l&O'C TO Equivalent device datasheet Dim. out­ line V V A pF IXGD28N30-43 IXGD40N30-5X 300 2.1 1.5 20 20 1500 2500