IXGP30N60B Search Results
IXGP30N60B Price and Stock
IXYS Corporation IXGP30N60B2IGBT 600V 70A TO-220-3 |
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IXGP30N60B2 | Tube | 50 |
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IXYS Corporation IXGP30N60B4D1IGBT PT 600V 56A TO-220-3 |
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IXGP30N60B4D1 | Tube |
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IXGP30N60B Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|---|
| IXGP30N60B2 |
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IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT | Original | 557.62KB | 5 | |||
| IXGP30N60B4D1 |
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IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 190W TO220 | Original | 2 |
IXGP30N60B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
IXGP30N60B4D1Contextual Info: Preliminary Technical Information High-Gain IGBT w/ Diode IXGP30N60B4D1 VCES = IC110 = VCE sat tfi(typ) = High-Speed PT Trench IGBT 600V 30A 1.7V 88ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M |
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IXGP30N60B4D1 IC110 O-220 IF110 338B2 IXGP30N60B4D1 | |
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Contextual Info: Preliminary Technical Information High-Gain IGBT w/ Diode IXGP30N60B4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 30A 1.7V 88ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ |
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IXGP30N60B4D1 IC110 O-220 IF110 338B2 | |
IXGP30N60B4D1
Abstract: 727 diode IF110 IXGP30N60B
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IXGP30N60B4D1 IC110 O-220 IF110 338B2 IXGP30N60B4D1 727 diode IF110 IXGP30N60B |