IXSN55N120A Search Results

Contextual Info: High Voltage IGBT IXSN 55N120A VCES = 1200 V IC25 = 110 A 4V VCE sat = 3 Short Circuit SOA Capability 2 Preliminary Data 4 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 A VGES Continuous ±20

IXSN55N120A

Abstract: on 3150
Contextual Info: High Voltage IGBT IXSN 55N120A VCES = 1200 V IC25 = 110 A 4V VCE sat = 3 Short Circuit SOA Capability 2 Preliminary Data 4 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 VCGR T J = 25°C to 150°C; RGE = 1 MW 1200 A VGES Continuous

T0263

Abstract: T0-263 IXSH25N120A IXSH30N60C IXSH15N120B
Contextual Info: Insulated Gate Bipolar Transistors IGBT S series with SCSOA capability v’ ces mln V *C(25» A V WCE(SAT) max V % typ ns T0-220 (P) PLUS247 (X) TO-268(T) T0263(A) TO-247(H) T0-204<M) IS0PLUS247T*I(R) SOT-227B(N) ♦ 4k ► Ne N TO-264<K) 4* LOW SATURATION VOLTAGE TYPES

Contextual Info: High Voltage IGBT IXSN 55N120A VCES = 1200 V IC25 = 110 A 4V VCE sat = 3 Short Circuit SOA Capability 2 Preliminary Data 4 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 VCGR T J = 25°C to 150°C; RGE = 1 MW 1200 A VGES Continuous

case style

Abstract: IXSH35N100A
Contextual Info: -^ Discrete IGBT 8 S series with SCSOA capability A ji> *C 2S) Vcss min V typ ns T O -2 4 7 (H )^ ^ ^ PLUS247 (X) Case style 6 ► New TO-268AA (T) _ TO-264 (K) SOT-227B (N) ISOPLUS247™ (R) Case style Case style Case style LOW SATl JRATION l/OLTA<3E TYPES