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    IXSN80N60AU1 Search Results

    IXSN80N60AU1 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXSN80N60AU1
    		IXYS TRANS IGBT MODULE N-CH 600V 160A 4SOT-227B Original PDF 97.43KB 4
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    IXSN80N60AU1 Price and Stock

    IXYS Corporation

    IXYS Corporation IXSN80N60AU1

    IGBT MOD 600V 160A 500W SOT227B
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    IXSN80N60AU1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IGBT with Diode IXSN 80N60AU1 VCES IC25 VCE sat = 600 V = 160 A = 3V Short Circuit SOA Capability C G E Symbol Test Conditions VCES TJ = 25°C to 150°C E Maximum Ratings 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient


    Original     		80N60AU1 OT-227 E153432 PDF

    30n50 mosfet

    Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
    Contextual Info: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600


    OCR Scan     		O-263 O-263AA O-247 IXGA10N60A IXGA24N60A IXGH32N60B IXGH50N60AS IXGA10N60U1 30n50 mosfet DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel PDF

    80n60

    Abstract: IXSN80N60AU1
    Contextual Info: IGBT with Diode IXSN 80N60AU1 VCES IC25 VCE sat = 600 V = 160 A = 3V Short Circuit SOA Capability C G E Symbol Test Conditions VCES TJ = 25°C to 150°C E Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V VGEM Transient ±30


    Original     		80N60AU1 OT-227 E153432 80n60 IXSN80N60AU1 PDF