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    IXTA14N60P Search Results

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    IXTA14N60P Price and Stock

    Littelfuse Inc IXTA14N60P

    MOSFET N-CH 600V 14A TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTA14N60P Tube 194 1
    • 1 $5.76
    • 10 $5.76
    • 100 $2.7687
    • 1000 $2.21475
    • 10000 $2.21475
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    Newark IXTA14N60P Bulk 300
    • 1 -
    • 10 -
    • 100 $3.16
    • 1000 $2.54
    • 10000 $2.36
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    IXYS Corporation IXTA14N60P

    MOSFETs 14.0 Amps 600 V 0.55 Ohm Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTA14N60P
    • 1 $5.62
    • 10 $5.46
    • 100 $2.76
    • 1000 $2.76
    • 10000 $2.76
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    Bristol Electronics IXTA14N60P 150 2
    • 1 -
    • 10 $2.5797
    • 100 $1.8522
    • 1000 $1.7197
    • 10000 $1.7197
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    Quest Components () IXTA14N60P 120
    • 1 $5.22
    • 10 $5.22
    • 100 $3.219
    • 1000 $3.219
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    IXTA14N60P 120
    • 1 $5.3154
    • 10 $2.6577
    • 100 $2.4805
    • 1000 $2.4805
    • 10000 $2.4805
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    TTI IXTA14N60P Tube 300
    • 1 -
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    • 100 -
    • 1000 $2.95
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    Chip 1 Exchange IXTA14N60P 4,886
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    New Advantage Corporation IXTA14N60P 3,059 1
    • 1 -
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    • 100 $4.13
    • 1000 $4.13
    • 10000 $3.82
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    IXTA14N60P Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    IXTA14N60P
    		IXYS PolarHV Power MOSFET N-Channel Enhancement Mode Original PDF 84.26KB 2
    IXTA14N60P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 14A D2-PAK Original PDF 5

    IXTA14N60P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PolarHVTM Power MOSFET VDSS ID25 IXTA14N60P IXTP14N60P IXTQ14N60P = = ≤ RDS on P-Channel Enhancement Mode Avalanche Rated 600V 14A Ω 550mΩ TO-263 G S (TAB) TO-220 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTA14N60P IXTP14N60P IXTQ14N60P O-263 O-220 IXTA14N60P 14N60P 12-22-08-G PDF

    14n60

    Abstract: 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET IXTA14N60P IXTP14N60P IXTQ14N60P
    Contextual Info: IXTA14N60P IXTP14N60P IXTQ14N60P PolarHVTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = ≤ RDS on 600V 14A Ω 550mΩ TO-263 G S (TAB) TO-220 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTA14N60P IXTP14N60P IXTQ14N60P O-263 O-220 062ombs IXTA14N60P 14N60P 14n60 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET IXTP14N60P IXTQ14N60P PDF