Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXTF1N400 Search Results

    SF Impression Pixel

    IXTF1N400 Price and Stock

    IXYS Corporation IXTF1N400

    MOSFET N-CH 4000V 1A I4PAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTF1N400 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXTF1N400 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    IXTF1N400
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 4000V 1A ISOPLUS I4 Original PDF 4

    IXTF1N400 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    t1n-400

    Abstract: IXTF1N400
    Contextual Info: Preliminary Technical Information IXTF1N400 High Voltage Power MOSFET VDSS ID25 RDS on = 4000V = 1A Ω ≤ 60Ω N-Channel Enhancement Mode ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTF1N400 1N400 5-09-A t1n-400 IXTF1N400 PDF

    T1N400

    Abstract: IXTF1N400 1N400 diode diode 1n400 IXTF1N
    Contextual Info: IXTF1N400 High Voltage Power MOSFET VDSS ID25 = 4000V = 1A Ω ≤ 60Ω RDS on (Electrically Isolated Tab) N-Channel Enhancement Mode ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTF1N400 50/60Hz, 1N400 5-09-A T1N400 IXTF1N400 1N400 diode diode 1n400 IXTF1N PDF

    IXTF1N400

    Contextual Info: IXTF1N400 High Voltage Power MOSFET VDSS ID25 = 4000V = 1A Ω ≤ 60Ω RDS on (Electrically Isolated Tab) N-Channel Enhancement Mode ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 90°C 4000 V VDGR TJ = 25°C to 90°C, RGS = 1MΩ


    Original     		IXTF1N400 1N400 5-09-A IXTF1N400 PDF

    IXTF1N400

    Abstract: 1N400 diode 1N400 diode 1n400 T1N400 200v mosfet
    Contextual Info: Preliminary Technical Information IXTF1N400 High Voltage Power MOSFET VDSS ID25 = 4000V = 1A Ω ≤ 60Ω RDS on (Electrically Isolated Tab) N-Channel Enhancement Mode ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4000 V


    Original     		IXTF1N400 50/60Hz, 1N400 5-09-A IXTF1N400 1N400 diode diode 1n400 T1N400 200v mosfet PDF

    IXTF1N400

    Contextual Info: High Voltage Power MOSFET VDSS ID25 IXTF1N400 = 4000V = 1A Ω ≤ 60Ω RDS on (Electrically Isolated Tab) N-Channel Enhancement Mode ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTF1N400 1N400 5-09-A IXTF1N400 PDF

    IXGF30N400

    Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
    Contextual Info: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers


    Original     		O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 PDF