Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXTH4N150 Search Results

    SF Impression Pixel

    IXTH4N150 Price and Stock

    Littelfuse Inc IXTH4N150

    MOSFET N-CH 1500V 4A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH4N150 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.97863
    • 10000 $4.97863
    		Buy Now
    Newark IXTH4N150 Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $5.22
    • 10000 $5.22
    		Buy Now

    IXYS Corporation IXTH4N150

    MOSFETs High Voltage Power MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTH4N150 299
    • 1 $9.57
    • 10 $8.2
    • 100 $5.66
    • 1000 $4.97
    • 10000 $4.97
    		Buy Now
    TME IXTH4N150 1
    • 1 $8.3
    • 10 $6.6
    • 100 $5.93
    • 1000 $5.93
    • 10000 $5.93
    		Get Quote
    New Advantage Corporation IXTH4N150 280 1
    • 1 -
    • 10 -
    • 100 $15.28
    • 1000 $14.11
    • 10000 $14.11
    		Buy Now

    IXTH4N150 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    IXTH4N150
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1500V 4A TO-247 Original PDF 5

    IXTH4N150 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTH4N150

    Abstract: 4N150
    Contextual Info: Advance Technical Information IXTH4N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH4N150 O-247 100ms 4N150 0-26-10-A IXTH4N150 PDF

    IXTH4N150

    Abstract: 4n150
    Contextual Info: IXTH4N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH4N150 O-247 100ms 4N150 0-26-10-A IXTH4N150 PDF

    IXTH4N150

    Contextual Info: IXTH4N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH4N150 O-247 100ms 4N150 9-12-12-C IXTH4N150 PDF

    IXTH4N150

    Contextual Info: High Voltage Power MOSFET VDSS ID25 IXTH4N150 = = RDS on ≤ 1500V 4A 6Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH4N150 O-247 100ms 4N150 0-26-10-A IXTH4N150 PDF