IXTL2X220N075T Search Results

IXTL2x220N075T

Contextual Info: Advance Technical Information TrenchMVTM Power MOSFETs Common-Gate Pair 75 V VDSS = ID25 = 2x120 A Ω RDS on ≤ 5.5 mΩ IXTL2x220N075T (Electrically Isolated Back Surface) D D N-Channel Enhancement Mode Avalanche Rated RG RG ISOPLUS i5-PakTM (IXTL) S Symbol

Contextual Info: Advance Technical Information TrenchMVTM Power MOSFETs Common-Gate Pair 75 V VDSS = ID25 = 2x120 A Ω 5.5 mΩ RDS on ≤ IXTL2x220N075T (Electrically Isolated Back Surface) D D N-Channel Enhancement Mode Avalanche Rated RG RG ISOPLUS i5-PakTM (IXTL) S Symbol

1262-33

Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T
Contextual Info: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.

isoplus

Abstract: isoplus ixys mounting copper thermal SIL-PAD ISOPLUS247 IXFC14N60P IXFP14N60P IXTL2x240N055T IXTL2X200N085T
Contextual Info: H I G H C U R R E N T T R E N C H M V P O W E R M O S F E T S I N 5 - L E A D I S O P L U S I 5 - PA K S ™ N E W P R O D U C T B R I E F SUMMARY TABLE Part Number High Current TrenchMVTM Power MOSFETs in 5-lead ISOPLUS i5-PaksTM 2 HUGE TRENCH MOSFETS IN 1 ISOLATED PACKAGE.