IXTQ130N10T Search Results

IXTQ130N10T Price and Stock

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Littelfuse Inc IXTQ130N10T MOSFET N-CH 100V 130A TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTQ130N10T	Tube	300		1	1 $6.33 10 $6.33 100 $3.60733 1000 $2.56829 10000 $2.51263	Buy Now
Newark	IXTQ130N10T	Bulk			300	1 - 10 - 100 $3.58 1000 $2.88 10000 $2.68	Buy Now
IXYS Corporation IXTQ130N10T MOSFETs 130 Amps 100V 8.5 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTQ130N10T					1 $5.54 10 $5.05 100 $3.61 1000 $2.56 10000 $2.51	Get Quote
TTI	IXTQ130N10T	Tube			300	1 - 10 - 100 - 1000 $3.42 10000 $3.35	Buy Now
New Advantage Corporation	IXTQ130N10T		301		1	1 - 10 - 100 $7.71 1000 $7.12 10000 $7.12	Buy Now

IXTQ130N10T Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
IXTQ130N10T		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 130A TO-3P		Original	PDF		5

IXTQ130N10T Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TrenchMVTM Power MOSFET VDSS ID25 IXTH130N10T IXTQ130N10T RDS on N-Channel Enhancement Mode Avalanche Rated = 100V = 130A Ω ≤ 9.1mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 175°C 100 V VDGR T J = 25°C to 175°C, RGS = 1MΩ	Original	IXTH130N10T IXTQ130N10T O-247 130N10T 7-29-08-A	PDF
IXTH130N10T Abstract: IXTQ130N10T 130N10T 130n10 TO-3P weight Contextual Info: TrenchMVTM Power MOSFET IXTH130N10T IXTQ130N10T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 100V = 130A Ω ≤ 9.1mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 175°C 100 V VDGR T J = 25°C to 175°C, RGS = 1MΩ	Original	IXTH130N10T IXTQ130N10T O-247 130N10T 7-29-08-A IXTH130N10T IXTQ130N10T 130n10 TO-3P weight	PDF
130N10T Abstract: 130n10 IXTP130N10 Contextual Info: Preliminary Technical Information IXTH130N10T IXTQ130N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on = 100 V = 130 A Ω ≤ 8.5 mΩ TO-247 (IXTH) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	IXTH130N10T IXTQ130N10T O-247 130N10T 130N10T 130n10 IXTP130N10	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS	PDF
1262-33 Abstract: IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T Contextual Info: TrenchMV 55V-100V Power MOSFETs The ISOPLUS™ Advantage All IXYS ISOPLUS packages are manufactured with an internal direct-copper-bonded (DCB) isolated substrate, are UL certified and provide integral backside case isolation. These packages provide high isolation capability (up to 2500V), improve creepage distance and dramatically reduce total thermal resistance.	Original	5V-100V) O-247 PLUS220 ISOPLUS220TM PLUS220SMD O-252 O-220 O-263 1262-33 IXTP44N10T IXTH200N10T ixtp76n075 IXTA60N10T IXTQ130N10T IXTP98N075T IXTP130N10T IXTP240N055T IXTP64N055T	PDF
IXAN0065 Abstract: IXTQ130N10T mosfet ixys Contextual Info: IXYS Power MOSFET Datasheet Parameters Definition Abdus Sattar, IXYS Corporation IXAN0065 IXYS provides datasheets with parameters that are essential and useful for selecting the appropriate device as well as for predetecting its performance in an application. The graphs included in the datasheet represent typical performance	Original	IXAN0065 IXTH/IXTQ130N10T" IXAN0065 IXTQ130N10T mosfet ixys	PDF