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    IXTM42N20 Search Results

    IXTM42N20 Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTM42N20
    		IXYS MegaMOS FET Scan PDF 377.43KB 4
    IXTM42N20
    		IXYS MegaMOS Power MOSFETs Scan PDF 716.65KB 8
    IXTM42N20
    		Unknown Shortform Datasheet & Cross References Data Short Form PDF 77.08KB 1

    IXTM42N20 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    42N15

    Abstract: 079A 42N20
    Contextual Info: I X Y S CORP 10E D I D00D3b4 3 I /_ V -3 Ÿ -/S - □IXYS MegaMOS FETs IXTH42N20, 15 IXTM42N20, 15 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vd Drain-Gate Voltage (Rq s = 1.0MÎ1) (1) Vqqr Gate-Source Voltage Continuous


    OCR Scan     		D00D3b4 IXTH42N20, IXTM42N20, IXTH42N15 IXTM42N15 IXTH42N20 IXTM42N20 O-204 O-247 50-200V, 42N15 079A 42N20 PDF

    50N20

    Abstract: 42N20 IXTH42N20
    Contextual Info: J □ IXYS MegaMOS FET IXTH/IXTM42N20 IXTH/IXTM50N20 p V DSS ^D25 200 V 200 V 42 A 50 A DS on 60 mQ 45 mQ N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS T j = 25 °C to 150°C 200 V VDGR T j = 25 °C to 150°C; Ras = 1 M£2 200


    OCR Scan     		IXTH/IXTM42N20 IXTH/IXTM50N20 42N20 50N20 O-204 O-247 O-247 O-204 IXTH42N20 PDF

    42n20

    Abstract: 50n20 to-204ae ups 017 isolated nm 232
    Contextual Info: VDSS MegaMOSTMFET IXTH/IXTM42N20 IXTH/IXTM50N20 200 V 200 V ID25 RDS on 42 A 60 mΩ Ω Ω 50 A 45 mΩ N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		IXTH/IXTM42N20 IXTH/IXTM50N20 O-247 42N20 50N20 O-204 O-204 O-247 42n20 50n20 to-204ae ups 017 isolated nm 232 PDF