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    IXTM4N80 Search Results

    IXTM4N80 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTM4N80 IXYS High Voltage Power MOSFETs Scan PDF
    IXTM4N80 IXYS High Voltage Power MOSFETs Scan PDF
    IXTM4N80 Unknown FET Data Book Scan PDF
    IXTM4N80 Sharp 800 V, 4 A, sourse-drain diode Scan PDF
    IXTM4N80A IXYS High Voltage Power MOSFETs Scan PDF
    IXTM4N80A IXYS High Voltage Power MOSFETs Scan PDF
    IXTM4N80A Unknown FET Data Book Scan PDF

    IXTM4N80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SIEMENS 800

    Abstract: 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n
    Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) ros (on) (Ohms) Po Max ON) 9FS VGS(th) C|S8 •Oper Max Max tr Max tf Min Max Max W (V) (F) (8) (8) (°0 Package Style MOSFETs, N-Channel Enhancement-Type (Cont'd) . . .5 . .10 BUZ308 BUZ80


    Original     		PDF O-220AB O-218 O-204 204AC O-238AA SIEMENS 800 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n

    MJ1005

    Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007
    Text: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:


    Original     		PDF IXTM3N100A O-204AA/TO-3 IXTM3N70A IXTM3N70 O-204AA/TO-3: MJ13081 MJ13091 MJ1005 MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007

    4n90

    Abstract: 4N80A IXTM4N90
    Text: I X Y S CORP 1ÔE D • 4 taÖb E S ta GGGObG? 3 ■ IXTP4N80, IXTP4N90, IXTM4N80, IXTM4N90 'T '3 °l - 13 4 A M P S- 800-900 V, 2.4Q/3.0Q □ IX Y S MAXIMUM RATINGS Parameter Sym . Draln-Source Voltage 1 Drain-Gate Voltage (RQS =1.0 MQ) (1) Gate-Source Voltage Continuous


    OCR Scan     		PDF DG0DL07 IXTP4N80, IXTP4N90, IXTM4N80, IXTM4N90 IXTP4N80 IXTM4N80 IXTP4N90 IXTM4N90 EL420 4n90 4N80A

    4n90

    Abstract: 4N80 4N80A IXTM4N80 IXTM4N90 IXTP4N80 IXTP4N90 4N80R
    Text: I X Y S CORP □ IX Y S 1ÔE D • 4 ta Öb E S ta GGGObG? 3 ■ IXTP4N80, IXTP4N90, IXTM4N80, IXTM4N90 'T '3 °l - 13 4 AMPS- 800-900 V, 2.4Q/3.0Q MAXIMUM RATINGS Parameter Sym . IXTP4N80 IXTM4N80 IXTP4N90 IXTM4N90 Draln-Source Voltage 1 VDss 800 900 800


    OCR Scan     		PDF DG0DL07 IXTP4N80, IXTP4N90, IXTM4N80, IXTM4N90 IXTP4N80 IXTM4N80 IXTP4N90 IXTM4N90 O-220 4n90 4N80 4N80A IXTM4N80 4N80R

    Untitled

    Abstract: No abstract text available
    Text: DIXYS Standard Power MOSFET ix t h / ix tm 6N8O IX TH /IXTM 6N80A p v DSS ^D25 DS on 800 V 800 V 6A 6A 1.8 CÌ 1.4 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS Tj =25°C to150°C 800 V VD0H T j = 25°C to 150°C; RGS= 1 Mi2 800


    OCR Scan     		PDF 6N80A to150 O-247 O-204 O-204 O-247 C2-56 IXTM4N80A

    IRF250

    Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
    Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


    OCR Scan     		PDF 00V/12A IRF250 IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95

    IXTH13P20

    Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
    Text: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per­ formance and ruggedness in high voltage switching applications. In addition, they are directly com­


    OCR Scan     		PDF

    IXTM6N90A

    Abstract: No abstract text available
    Text: 4686226 03E 00145 I X Y S CORP I X Y S CORP □3 D D Ë T | 4bflbS2b DDODIMS 2 N-Channel MOSFETs Drain Current Id @ 25 °C C ase On R esistance Part Drain-Source Voltage Number V BR DSS l[>(Cont) lO(Pulsed) RDS(on) (Volts) (Amps) (Amps) (O hm s) 1000 1000


    OCR Scan     		PDF IXTM5N100A IXTM5N100 IXTM4N100A IXTM4N100 IXTM2N100A IXTM2N100 IXTM5N95A IXTM5N95 IXTM4N95A IXTM4N95 IXTM6N90A

    1800 IXYS

    Abstract: IXTM4N70A IXTM4N80 IXTM4N90 IXTM5N100 to-204
    Text: - m s it * f M t Vd s or € t JV £ Ta=25°C Vg s Ig s s Id s s Vg s th) F D s (on) Vd s = * /CH * /CH g fs lo (o n ) Ciss Coss C rss (*typ) (*typ) (*typ) (V) (W) (A) (nA) Vg s (V) < UA) Vd s (V) Id (mA) (max) (max) (max) (V) (V) (pF) (pF) (pF) 5^ m m %


    OCR Scan     		PDF M4N50 T0-204 1XTM4N50A O-204 1XTM4N70 IXTM4N70A IXTM10N90A 1800 IXYS IXTM4N80 IXTM4N90 IXTM5N100 to-204