Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXTQ96N25T Search Results

    IXTQ96N25T Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTQ96N25T
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 96A TO-3P Original PDF 5
    SF Impression Pixel

    IXTQ96N25T Price and Stock

    Select Manufacturer

    Littelfuse Inc IXTQ96N25T

    MOSFET N-CH 250V 96A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTQ96N25T Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.42
    • 10000 $3.42
    		Buy Now
    Newark IXTQ96N25T Bulk 300
    • 1 -
    • 10 -
    • 100 $4.88
    • 1000 $3.92
    • 10000 $3.65
    		Buy Now

    IXYS Corporation IXTQ96N25T

    MOSFETs 96 Amps 250V 36 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTQ96N25T
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.70
    • 10000 $4.70
    		Get Quote
    TTI IXTQ96N25T Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.57
    • 10000 $4.57
    		Buy Now
    TME IXTQ96N25T 1
    • 1 $5.71
    • 10 $4.55
    • 100 $4.08
    • 1000 $4.08
    • 10000 $4.08
    		Get Quote

    IXTQ96N25T Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTH96N25T

    Abstract: IXTQ96N25T 96N25T 96N2
    Contextual Info: Preliminary Technical Information TrenchHVTM Power MOSFET IXTH96N25T IXTQ96N25T IXTV96N25T VDSS ID25 = 250V = 96A Ω ≤ 29mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXTH96N25T IXTQ96N25T IXTV96N25T O-247 96N25T IXTH96N25T IXTQ96N25T 96N25T 96N2 PDF

    Contextual Info: Preliminary Technical Information TrenchHVTM Power MOSFET IXTH96N25T IXTQ96N25T IXTV96N25T VDSS ID25 = 250V = 96A Ω ≤ 29mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXTH96N25T IXTQ96N25T IXTV96N25T O-247 96N25T PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 PDF