IXTW12N90 Search Results
IXTW12N90 Datasheets Context Search
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Contextual Info: n ix Y S MegaMOS FET IXTH/IXTM 12N90 VDSS = 900 V lD25 =12 A ^D S on ” ^ N-Channel Enhancement Mode Symbol Test Conditions V DSS T j =25°C to 150°C 900 V v DGR T j = 25° C to 150° C; RGS= 1 M£2 900 V VQS v GSM Continuous i2 0 V Transient ±30 V |
OCR Scan |
12N90 O-247 O-204 O-204 O-247 C2-72 IXTW12N90 C2-73 |