IXYS DIODE HIGH POWER Search Results

EVLD02

Abstract: IXDD415SI PUSH PULL MOSFET DRIVER dip IXLD02SI IXDD DEIC420 IXDD414CI RF MOSFETs 10mhz mosfet EVDN404
Contextual Info: MOSFET DRIVER IC'S SWITCH MODE POWER SUPPLIES & RF GENERATORS January 2003 These ultra-fast high current drivers are optimized to drive IXYS RF MOSFETs and IXYS IGBTs for high efficiency performance in RF generators, laser diode drivers, pulse generators, motor drive and power conversion applications. They

bod ixys

Abstract: IXYS IXBOD
Contextual Info: Breakover Diodes Applications ● Transient voltage protection High-voltage switches ● Crowbar ● Lasers ● Pulse generators ● i IH IBO V VH VBO H 1999 IXYS All rights reserved H-1 IXBOD 1 -06.10 Single Breakover Diode VBO Standard V Types VBO = 600-1000V

IXYS IXBOD

Abstract: lt 747 bod ixys
Contextual Info: D IX Y S Breakover Diodes Applications • Transient voltage protection • High-voltage switches • Crowbar • Lasers • Pulse generators o- 1998 IXYS All rights reserved H -1 mmm IXBOD 1 -06.10 1A. X U Single Breakover Diode =600 - 1000V ^AVM ”

Contextual Info: □ IXYS Preliminary Data Sheet High Voltage IGBT with Diode IXSX35N120AU1 V IXSX35N120All 1S I Combi Pack Short Circuit SOA Capability CES 1200 V 70 A C25 V 4V CE SAT PLUS TO-247 SMD (IXSX35N120AU1S) Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C

Contextual Info: □ IXYS Low VCE sal IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 V CES ^C25 V CE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions vw CES T, = 25°C to 150°C 1000 V V CGR Tj = 25°C to 150°C; RaE = 1 M£2

Contextual Info: □ IXYS Preliminary Data Sheet High Voltage IGBT with Diode IXSK35N120AU1 VCES I Maximum Ratings Symbol Test Conditions VCES VCGR v GES vGEM Td = 25°C to 150°C 1200 V Td = 25°C to 150°C; RGE = 1 M£i 1200 V Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C

jvv diode

Abstract: IXDN 50N120AU1 50N120AU1 IXDN50N120AU1 0504N
Contextual Info: □ IXYS High Voltage IGBT with Diode IXDN 50N120AU1 V CES 1200 V ^C25 70 A V CE sat typ 2.5 V Short Circuit SOA Capability Preliminary Data Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 1200 V V CGR Td = 25°C to 150°C; RGE = 1 M£i

0504N

Contextual Info: □ IXYS High Voltage IGBT with Diode IXDN 55N120AU1 Short Circuit SOA Capability V CES 1200 V ^C25 85 A V C E sat typ 2.5 V Preliminary Data Maximum Ratings Symbol Test Conditions v CES VCGR T j = 25°C to 150°C 1200 V T j = 25°C to 150°C; RGE = 1 M£i

55N120D1

Abstract: ixdn 30 n 120 d1
Contextual Info: □ IXYS IXDN 55N120 IXDN 55N120 D1 High Voltage IGBT with optional Diode V CES 1200 V 100 A 2.3 V ^C25 V CE sat typ S hort C ircuit SO A Capability Square RBSOA IX D N 5 5 N 1 2 0 Preliminary Data IX D N 5 5 N 1 2 0 D1 miniBLOC, SOT-227 B E153432 E Symbol

IXYS Colorado Introduces EVLD02-II Evaluation Board for the IXLD02SI Laser Diode Driver IC

Abstract: EVLD02-II IXLD02SI laser diode driver ic Directed Energy industrial pulse generators schematic EVLD02 Laser Diode driver
Contextual Info: FOR IMMEDIATE RELEASE Contact: Yvonne Clark IXYS Colorado Directed Energy, Inc. Tel: (970) 493-1901 ext. 26 IXYS Colorado Introduces EVLD02-II Evaluation Board for the IXLD02SI Laser Diode Driver IC Fort Collins, CO. July 13, 2010. IXYS Corporation (NASDAQ IXYS), a leader in power

40N60SCD1

Abstract: ixkf40n60scd1 IXYS DS 145
Contextual Info: IXKF 40N60SCD1 CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 41 A RDS on) typ. = 60 mΩ trr = 70 ns with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PAC™ ISOPLUS i4-PAC™ 5 DS Preliminary data 1 DF 1 T 2 5 E72873

IXYS CORPORATION

Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
Contextual Info: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS

Contextual Info: IXKF 40N60SCD1 CoolMOS 1 Power MOSFET VDSS ID25 RDS on) typ. trr with Series Schottky Diode and Ultra Fast Antiparallel Diode = 600 V = 41 A = 60 m = 70 ns in High Voltage ISOPLUS i4-PAC™ ISOPLUS i4-PAC™ 5 DS DF Preliminary data 1 1 2 T 5 E72873 2

SOT227B package

Abstract: DSA300 SMPS Solar Battery chargers ixys DSA300I100NA DSA300I200NA DSA300I45NA ups over smps advantages
Contextual Info: FOR IMMEDIATE RELEASE Contacts: Bradley Green, IXYS Switzerland, Tel: +41 32 374 4020 Ronnie Ganitano, IXYS Corporation, Tel: 408-457-9000 IXYS Introduces Its Largest Single Die Schottky Diode For Increased Efficiency In Power Rectification Biel, Switzerland, October 14, 2010 – IXYS Corporation NASDAQ: IXYS , a leader in power

Q817C

Abstract: q817 DSS2-60AT2 IPS18 IPS-DK18 FERRITE core ee TRANSFORMER dss2 IPS18C 1N4148 1N4743A
Contextual Info: D E S I G N K I T / E VA L U AT I O N S Y S T E M – A P P L I C AT I O N T O O L B R I E F N E W A P P L I C A T I O N T O O L B R I E F IPS-DK18 / EVPS001 Schematic EI/EE CORE FERRITE TRANSFORMER 13MM L1 Design Kit and Evaluation System: 5W to 10W Ultra-Green Power Supply

VUM33-06PH

Abstract: 33-06PH vum33 Fast Recovery Bridge Rectifier, 60A, 600V
Contextual Info: VUM 33-06PH Power MOSFET Stage for Boost Converters Single Phase Rectifier Boost Diode MOSFET VRRM = 1600 V VRRM = 600 V VDSS = 600 V IDAV = 106 A IF25 Module for Power Factor Correction = 60 A ID25 = 50 A IFSM = 300 A VF 30A = 2.24 V RDS(on) = 120 mΩ Part name (Marking on product)

IXAN0065

Abstract: IXTQ130N10T mosfet ixys
Contextual Info: IXYS Power MOSFET Datasheet Parameters Definition Abdus Sattar, IXYS Corporation IXAN0065 IXYS provides datasheets with parameters that are essential and useful for selecting the appropriate device as well as for predetecting its performance in an application. The graphs included in the datasheet represent typical performance

single phase UPS 230V

Abstract: 230v ac dc smps circuit
Contextual Info: VUM 85-05A Advanced Technical Information VDSS = 500 V ID25 = 140 A Ω RDS on = 33 mΩ Rectifier Module for Three Phase Power Factor Correction VRRM (Diode) VDSS V V 500 500 Symbol Type VUM 85-05A Conditions Maximum Ratings Features MOSFET T 1 VDSS VGSM

UL758

Contextual Info: VMM 650-01F VDSS Dual Power HiPerFETTM Module ID25 RDS on = 100 V = 680 A Ω = 1.8 mΩ Phaseleg Configuration Preliminary Data Features MOSFET T1 + T2 Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 100 V ±20 V ID25 ID80 TC = 25°C TC = 80°C

ZY180L

Abstract: ZY180R
Contextual Info: VMM 1500-0075T2 VDSS = 75 V ID25 = 1500 A Ω RDS on = 0.5 mΩ Dual Power MOSFET Module Phaseleg Configuration Gate Control Pins 8 9 1 11 2 10 Features MOSFET T1 + T2 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 75 V ±20 V ID25 ID80 TC = 25°C

Contextual Info: DSS25-0025B V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 25 V 25 A 0.45 V Part number DSS25-0025B 3 1 Backside: cathode Applications: Features / Advantages: Rectifiers in switch mode power supplies SMPS

Contextual Info: VUM 33-06PH Power MOSFET Stage for Boost Converters Single Phase Rectiier Boost Diode VRRM = 1600 V VRRM Module for Power Factor Correction MOSFET = 600 V VDSS 60 A ID25 = 600 V = A IDAV = 106 A IF25 IFSM = 300 A VF 30A = 2.24 V RDS(on) = 120 m = 50 Part name (Marking on product)

Contextual Info: VUM 33-06PH Power MOSFET Stage for Boost Converters Single Phase Rectifier Boost Diode MOSFET VRRM = 1600 V VRRM = 600 V VDSS = 600 V IDAV = 106 A IF25 Module for Power Factor Correction = 60 A ID25 = 50 A IFSM = 300 A VF 30A = 1.9 V RDS(on) = 120 mΩ Part name (Marking on product)

Contextual Info: DSSK18-0025BS preliminary V RRM = 25 V I FAV = 2x 10 A V F = 0.37 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Rectifiers in switch mode power