IXYS DSEI 2X61 Search Results

IXYS DSEI 2X121-02a

Abstract: ixys dsei 2x30-12b DSEI IXYS 2x31-12B ixys dsei 1x31-06c IXYS DSEI 2 DSEI 120-06A 1x31-06c dsei 2x60 IXYS DSEI 2X61-12B DSEI IXYS 2x31
Contextual Info: IXYS _ FRED Contents K Package style/Bauform Type Page ns 1b TO-252AA 1 TO-220 AC 1a TO-263AA 35 35 35 k \ 1a 2 TO-247 AD 2a TO-247 AD 2b ISOPLUS 247 3 SOT-227 B, miniBLOC new DSEI6-06AS DSEI 8-06A DSEI 8-06AS D1-2 D1-4 D1-4 35 50 50 40

Contextual Info: •_4bßb22b 0 0 0 1 Ö2 S 5^2 M I X Y □IXYS Fast Recovery Epitaxial Diodes DSEI 2x61 lFAV = 2x60 A V rrm trr = 600-1000 V < 50 ns miniBLOC, SOT-227 B V v*» V 640 800 1000 600 800 1000 Type p ° ! 3 •- — Symbol Test Conditions 'frms *FAV* 1 Ifmi

ixys dsei 2x61-06C

Contextual Info: Mt a b PZ b D D G i a S 3 7 1 T • I X Y D I X Y S DSEI 2x61 Fast Recovery Epitaxial Diodes lFAV = 2x60 A VRRM = 400-600 V tn < 35 ns miniBLOC, SOT-227 B V V 440 540 640 400 500 600 2 • DSEI 2x61-04C DSEI 2x61-05C DSEI 2x61-06C 1 1 o-J H Ho 3 -« 4

Dsei 2x101-12A

Abstract: ixys dsei 1x31-06c ixys dsei 2x31-06c IXYS DSEI 2X121-02a ixys dsei 2x30-06c DSEI IXYS 2x31-12B 2x61-06c 2x121-02a 2x31-12B 2x31-10b
Contextual Info: FRED Contents Package style/Bauform 1b TO-252 AA 1b 1 1a 1 TO-220 AC 1 1a TO-263 AA 1a 2 TO-247 AD 2 2a TO-247 AD 2b ISOPLUS 247 TM 2a/b 2a 2a 3 SOT-227 B, miniBLOC 3 1999 IXYS All rights reserved VRRM IFAV trr V A ns 600 600 600 6 8 8 35 35 35 600 1000

ixys dsei 2x61

Abstract: 2X61 SMPS 30 IXYS DSEI 2
Contextual Info: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 200 200 IFAVM = 2x71 A VRRM = 200 V trr = 35 ns Type DSEI 2x 61-02P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM

ixys dsei 2x61

Abstract: dsei 2x60 IXYS DSEI 2 IXYS DSEI 2X 2x61
Contextual Info: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 IFAVM = 2x60 A VRRM = 600 V trr = 35 ns Type DSEI 2x 61-06P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM

DSEI2*61-12

Abstract: dsei 2x60
Contextual Info: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 IFAVM = 2x60 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 61-10P D5 Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM

Contextual Info: DSEI 2x61 Fast Recovery Epitaxial Diode FRED V 200 VRRM miniBLOC, SOT-227 B E72873 Type V 200 DSEI 2x61-02A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by T VJM IFSM

dsei 2x60

Abstract: IXYS DSEI 2X61 IXYS DSEI 2 ixys dsei IXYS DSEI 2X
Contextual Info: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 IFAVM = 2x60 A VRRM = 1000 V trr = 35 ns Type DSEI 2x 61-10P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM

ixys dsei 2*61-10b

Abstract: ATS1000 ixys dsei 12 IXYS DSEI 2X61-06
Contextual Info: 4bfl b22b 0001025 5T2 *IXY □IXYS Fast Recovery Epitaxial Diodes DSEI 2x61 IFAV V t miniBLOC, SOT-227 B v RSM V 640 800 1000 Sym bol V RRM 600 800 1000 2 OSEI 2x61-06B OSEI 2x61-08B DSEI 2x61-10B Ho Maximum Ratings per diode j. t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine

IXYS DSEI 2X121

Abstract: IXYS DSEI 2X121-02a 2x121-02a IXYS DSEI 2X61 DO-205 2X61-10B 110-12F dsei 2x60 110-16F 6206 sot 89
Contextual Info: DS 75 DSA 75 Rectifier Diodes Avalanche Diodes VRSM V BR min ① VRRM DSI 75 DSAI 75 VRRM = 800 - 1800 V IF(RMS) = 160 A I F(AV)M = 110 A DO-203 AB Anode Cathode on stud on stud C A V V V 900 1300 - 800 1200 DS 75-08B DS 75-12B DSI 75-08B DSI 75-12B 1300 1700

IXYS DSEI 2x61-06C

Abstract: 2X61-04C
Contextual Info: 1 .7 DSEI 2x 61 Fast Recovery Epitaxial Diode FRED IFAVM V rrm tTr v RS*I V 440 640 Symbol ^FRMS ^FAVH ^FRM ^FSM l2t Vrrm Type V 400 600 DSEI 2X61-04C DSEI 2X61-06C Q I-— 1 >0 1 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 550 600 A A TVJ = 150°C; t = 10 ms (50 Hz), sine

2x61

Abstract: IXYS DSEI 2X61 6112P
Contextual Info: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 IFAVM = 2x52 A VRRM = 1200 V trr = 40 ns Type DSEI 2x 61-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM

Contextual Info: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 IFAVM = 2x52 A VRRM = 1200 V = 40 ns trr Type DSEI 2x 61-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM

FR 0169

Abstract: 2X61-06C
Contextual Info: Fast Recovery Epitaxial Diodes FRED DSEI 2x61 lFAVM = 2x60 A vRRM= 400/600 V trr vV RSM V rrm \_0 V 440 640 400 600 DSEI 2x61-04C DSEI 2x61-06C Test Conditions Maximum Ratings (per diode) V rm "*"vj = T/ jm T . = 70°C; rectangular, d = 0.5 tp < 10 us; rep. rating, pulse width limited by T vjm

ixys dsei 12-12

Abstract: ixys dsei 60-06 ixys dsei 60-12 ixys 60-02 DWEP ixys dsei 12-06 IXYS DSEI 2
Contextual Info: Fast Recovery Epitaxial Diodes FRED Chips Type TVJM = 150°C VF ¬ @ IF TJ = 25°C V A DWEP 27 - 02 DWEP 37 - 02 DWEP 77 - 02 1.15 1.10 1.20 32 100 125 DWEP 8 - 06 DWEP 12 - 06 DWEP 15 - 06 DWEP 23 - 06 DWEP 25 - 06 DWEP 35 - 06 DWEP 55 - 06 DWEP 75 - 06 1.7

Contextual Info: Fast Recovery Epitaxial Diodes FRED DSEI 2x61 IFAVM = 2x60 A vRRM= 1000 v trr — v RSM Type V rrm V V 1000 1000 Symbol 1 > miniBLOC, SOT-227 B 1 DSEI 2x61-10B Test Conditions Maximum Ratings (per diode) 'frm "^vj “ Tvjm Tc= 50°C; rectangular, d = 0.5

IXYS DSEI 2x61-06C

Abstract: 2x61-06c ixys dsei 2x61 dsei 2x60
Contextual Info: Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 440 640 400 600 DSEI 2x61 IFAVM = 2x60 A VRRM = 400/600 V = 35 ns trr miniBLOC, SOT-227 B Type DSEI 2x61-04C DSEI 2x61-06C Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM

Contextual Info: DSEI 2x 61 Fast Recovery Epitaxial Diode FRED VRRM V V 200 200 miniBLOC, SOT-227 B E72873 Type DSEI 2x 61-02A Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM

ixys dsei 2x61

Abstract: DSEI 2X61-10B ixys dsei 2*61-10b
Contextual Info: Fast Recovery Epitaxial Diodes FRED VRSM V 1000 VRRM DSEI 2x61 IFAVM = 2x60 A VRRM = 1000 V = 35 ns trr miniBLOC, SOT-227 B Type V 1000 DSEI 2x61-10B Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5

IXYS DSEI 2X61

Abstract: E72873
Contextual Info: DSEI 2x 61 Fast Recovery Epitaxial Diode FRED VRRM V V 200 200 miniBLOC, SOT-227 B E72873 Type DSEI 2x 61-02A Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM

Contextual Info: DSEI 2x61 Fast Recovery Epitaxial Diodes FRED V RSM V VRRM 0-4- - H — i- 0 i o - l- H -H> i—_ _ _ » Type V 1200 Symbol 1200 Ji2dt ICC 52 700 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 450 500 A A TVJ = 150°C; t = 10 ms (50 Hz), sine

Contextual Info: □IX YS Fast Recovery Epitaxial Diode FRED V RSM V V’ FIRM DSEI 2x61 V 200 200 1 W.— H' *I n ° 1 - W — *-» Test Conditions ^FRMS ' favm *FRU TVJ —"lyjM Tc = 85°C; rectangular, d = 0.5 tp < 10 jis; rep. rating, pulse width limited by T VJM

IXYS DSEI 2X61-12B

Abstract: "SOT-227 B" dimensions 2x61-12B ixys dsei 2x61 2X61
Contextual Info: Fast Recovery Epitaxial Diodes FRED VRSM V 1200 VRRM DSEI 2x61 IFAVM = 2x52 A VRRM = 1200 V = 40 ns trr miniBLOC, SOT-227 B Type V 1200 DSEI 2x61-12B Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5