J112 ON Search Results

J113

Abstract: J112 Field Effect Transistors j112 ltd J111 VDS40 "igss 1 na"
Contextual Info: J111 J112 J113 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS TO-92 Jill, J112, J113 are N-channel silicon . junction field effect transistors designed for analog switching, choppers and commutators applications. ABSOLUTE MAXIMUM RATINGS Gate-Source Voltage

J112

Abstract: J112 equivalent J112 jfet J1-12 j112 on jfet j112
Contextual Info: J112 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J112 This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The TO-92 package is well suited for cost sensitive applications

Diode r4d

Abstract: j112 fet J112 J112 jfet application note jfet J111 transistor
Contextual Info: MOTOROLA Order this document by J112/D SEMICONDUCTOR TECHNICAL DATA JFET Chopper Transistor N–Channel — Depletion J112 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 35 Vdc Gate – Source Voltage VGS – 35

j112

Abstract: j112g J111
Contextual Info: J111, J112 JFET Chopper Transistors N−Channel — Depletion Features • Pb−Free Packages are Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain −Gate Voltage VDG −35 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current

J112

Abstract: Field Effect Transistors jill J113 j112 ltd J111 "igss 1 na"
Contextual Info: N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS [VHC3RO ELECTRONICS Jill, J112, J113 are N-channel silicon , junction field effect transistors designed for analog switching, choppers and commutators applications. TO-92 ABSOLUTE MAXIMUM RATINGS -35 V 50mA

J113 equivalent

Abstract: J112 J111 J113 "Field-Effect Transistors" J112 equivalent Field-Effect Transistors J-112
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product specification N-channel silicon field-effect transistors

Contextual Info: ON Semiconductort JFET Chopper Transistor J112 N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG –35 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C

J112 jfet

Abstract: J112G J113 equivalent datasheet jfet J111 transistor application note jfet J111 transistor J111 data sheet marking j112 j112 fet transistor J112 J112
Contextual Info: J111, J112 JFET Chopper Transistors N−Channel — Depletion Features • Pb−Free Packages are Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain −Gate Voltage VDG −35 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current

MMBFJ111

Abstract: J111 6R SOT23 J112 TO92
Contextual Info: J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 N-Channel Switch Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from Process 51. • Source & Drain are interchangeable.

Contextual Info: J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 N-Channel Switch Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from Process 51. • Source & Drain are interchangeable.

transistor j112

Abstract: J112 jfet j112
Contextual Info: ON Semiconductort JFET Chopper Transistor J112 N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG –35 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C

jfet j112

Abstract: J113 j111 transistor J112 J112 J112 TO92
Contextual Info: ON Semiconductort N–Channel — Depletion J111 J112 J113 1 DRAIN JFET Chopper Transistors 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG –35 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C

MJ-112

Contextual Info: FMMJ111 to FMMJ113 S0T23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FMMJ111 - C11 FM M J112 - C12 FM M J113 - C13 APPLICATION AREAS: * ANALOG SWITCHES * CHOPPERS * COMMUNICATORS ABSOLUTE MAXIMUM RATINGS at Tamb = 2 5 °C -3 5 V

J111

Abstract: J113 J112 transistor J112 IEC134 Vgsoff -6V J112 TO92 m8910 marking j112
Contextual Info: J111 J112 J113 Philips Components N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction field-effect transistors in plastic TO-92 envelopes. They are intended fo r applications such as analog switches, choppers, commutators etc.

J112

Abstract: J113 J111 transistor J112 Scans-00946
Contextual Info: 711002b □□b?c175 7^3 J111 J112 J113 IPHIN J V. N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended fo r applications such as analog switches, choppers, commutators etc. Features

J112

Abstract: J113 j111 J112 jfet J111/5
Contextual Info: ON Semiconductort N−Channel — Depletion J111 J112 J113 1 DRAIN JFET Chopper Transistors 3 GATE 2 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain −Gate Voltage Rating VDG −35 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C

J111

Abstract: j113 j112
Contextual Info: ON Semiconductort N–Channel — Depletion J111 J112 J113 1 DRAIN JFET Chopper Transistors 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG –35 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C

J112

Abstract: transistor J112 J112 equivalent J1-12 J112K
Contextual Info: J112 RoHS Compliant 20.2 x 5.3 x 12.8 mm E197851 Features • • • • Low power consumption .12W Ultra light weight Narrow width for high density mounting UL/CUL certified Dimensions shown in mm. Dimensions are shown for reference purposes only. Specifications and availability subject to change without notice.

J112

Abstract: transistor J112 J111 J113 MMBFJ111 MMBFJ112 MMBFJ113
Contextual Info: MMBFJ111 MMBFJ112 MMBFJ113 J111 J112 J113 G D G S TO-92 SOT-23 D S Mark: 6P / 6R / 6S N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 51. Absolute Maximum Ratings*

BSR58LT1

Contextual Info: Junctional Field−Effect Transistors JFETs Switches and Choppers N−Channel P−Channel RDS on Ω Max Ciss pF Max Crss pF Max VGSS VGDO Volts Min Min Max Min VGS(off) Volts IDSS mA Max ton ns Max toff ns Max J112 − 50 28 5.0 35 1.0 5.0 5.0 − − −

j111

Contextual Info: 711002b QGbV^VS 7 ci3 J111 J112 J113 IPHIN N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. Features • High speed switching

j111

Abstract: J112 J113 MMBFJ111 MMBFJ112 MMBFJ113
Contextual Info: MMBFJ111 MMBFJ112 MMBFJ113 J111 J112 J113 G D G S TO-92 SOT-23 D S Mark: 6P / 6R / 6S N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Absolute Maximum Ratings*

TO-236 MARKING CODE C3

Abstract: J112 equivalent vishay siliconix code marking to-92 TO226AA J112 TO92 j112 siliconix
Contextual Info: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number Vcs oft (V) J/SST111 J/SST112 -3 -1 J/SST113 r DS(on) Max (Q) lo(oft) Typ (pA) ton Typ (ns) to-10 to-5 30 5 4 50 5 4 < -3 100 5 4 FEATURES BENEFITS

motorola JFET 2N3819

Abstract: BF245 application note BC237 transistor TO-92 bc108 N CHANNEL JFET 2N3819
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper Transistor N–Channel — Depletion J112 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 35 Vdc Gate – Source Voltage VGS – 35 Vdc Gate Current IG 50 mAdc