J112 TO92 Search Results

J113

Abstract: J112 Field Effect Transistors j112 ltd J111 VDS40 "igss 1 na"
Contextual Info: J111 J112 J113 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS TO-92 Jill, J112, J113 are N-channel silicon . junction field effect transistors designed for analog switching, choppers and commutators applications. ABSOLUTE MAXIMUM RATINGS Gate-Source Voltage

J112

Abstract: J112 equivalent J112 jfet J1-12 j112 on jfet j112
Contextual Info: J112 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J112 This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The TO-92 package is well suited for cost sensitive applications

J112

Abstract: Field Effect Transistors jill J113 j112 ltd J111 "igss 1 na"
Contextual Info: N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS [VHC3RO ELECTRONICS Jill, J112, J113 are N-channel silicon , junction field effect transistors designed for analog switching, choppers and commutators applications. TO-92 ABSOLUTE MAXIMUM RATINGS -35 V 50mA

J113 equivalent

Abstract: J112 J111 J113 "Field-Effect Transistors" J112 equivalent Field-Effect Transistors J-112
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 July 1993 Philips Semiconductors Product specification N-channel silicon field-effect transistors

MMBFJ111

Abstract: J111 6R SOT23 J112 TO92
Contextual Info: J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 N-Channel Switch Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from Process 51. • Source & Drain are interchangeable.

Contextual Info: J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 N-Channel Switch Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from Process 51. • Source & Drain are interchangeable.

J111

Abstract: J113 J112 transistor J112 IEC134 Vgsoff -6V J112 TO92 m8910 marking j112
Contextual Info: J111 J112 J113 Philips Components N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction field-effect transistors in plastic TO-92 envelopes. They are intended fo r applications such as analog switches, choppers, commutators etc.

J112

Abstract: J113 J111 transistor J112 Scans-00946
Contextual Info: 711002b □□b?c175 7^3 J111 J112 J113 IPHIN J V. N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended fo r applications such as analog switches, choppers, commutators etc. Features

J112

Abstract: transistor J112 J111 J113 MMBFJ111 MMBFJ112 MMBFJ113
Contextual Info: MMBFJ111 MMBFJ112 MMBFJ113 J111 J112 J113 G D G S TO-92 SOT-23 D S Mark: 6P / 6R / 6S N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 51. Absolute Maximum Ratings*

j111

Contextual Info: 711002b QGbV^VS 7 ci3 J111 J112 J113 IPHIN N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. Features • High speed switching

j111

Abstract: J112 J113 MMBFJ111 MMBFJ112 MMBFJ113
Contextual Info: MMBFJ111 MMBFJ112 MMBFJ113 J111 J112 J113 G D G S TO-92 SOT-23 D S Mark: 6P / 6R / 6S N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Absolute Maximum Ratings*

motorola JFET 2N3819

Abstract: BF245 application note BC237 transistor TO-92 bc108 N CHANNEL JFET 2N3819
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper Transistor N–Channel — Depletion J112 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 35 Vdc Gate – Source Voltage VGS – 35 Vdc Gate Current IG 50 mAdc

Contextual Info: LSJ112 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J112 This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The TO-92 package is well suited for cost sensitive applications

Contextual Info: 7110flEb □ G b ? c17S 7T3 « P H I N J in J112 J113 y V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc.

J113

Abstract: J112 J111 DU240
Contextual Info: • 1^53=131 DÜ240Gb TTT « A P X J111 J112 J113 b7E T> N AMER PHILIPS/DIS CRET E N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended fo r applications such as analog switches, choppers, commutators etc.

J111

Abstract: J112 J113 SST111 SST112 SST113 j113 equivalent 4858a
Contextual Info: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 FEATURES

to236

Abstract: 37652 Siliconix N-Channel JFETs J/SST113 J113 equivalent marking j112 SST111 C1 AN105 J111 J112
Contextual Info: J/SST111 Series N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 J/SST111, For applications information see AN105, page 1.

SST113

Abstract: SST112 J111 J112 J113 SST111
Contextual Info: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 FEATURES

marking code J111

Abstract: J113 equivalent c3 marking J/SST113 SST111 C1 to236 J111 J112 J113 SST111
Contextual Info: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 FEATURES

J111

Abstract: J112 J113 SST111 SST112 SST113 marking code J111 device code J111
Contextual Info: J/SST111 Series N-Channel JFETs J111 J112 J113 SST111 SST112 SST113 Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 30 5 4 J/SST111 –3 to –10 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 Features Benefits Applications

SST111

Abstract: J111 J112 J113 SST112 SST113 device code J111
Contextual Info: J/SST111 Series N-Channel JFETs J111 J112 J113 SST111 SST112 SST113 Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 30 5 4 J/SST111 –3 to –10 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 Features Benefits Applications

c3 MARKING CODE

Abstract: c3 marking
Contextual Info: T e m ic J/SST lll Series Siliconix N-Channel JFETs J ill J112 J113 SST111 SST112 SST113 Product Summary P a r t N u m b er V g S o£F (V) r DS(on) M ax (Q ) ii)(ofr> i y p (pA) toN Typ (n s) J/S S T lll - 3 to - 1 0 30 5 4 J/SST112 - 1 to - 5 50 5 4 J/SST113

SST113

Contextual Info: Tem ic J/SST111 Series S e m i c o n d u c t o r s N-Channel JFETs J ill SST111 J112 SST112 J113 SST113 Product Summary Part Number VGS off (V ) J /S S T lll J/S S T H 2 J/SST113 t o N T y p (n s ) r DS<on) M a x ( Q ) IlXofD T y p (p A ) - 3 t o -1 0 30

Contextual Info: • bbS3=131 002400b TTT « A P X jm J112 b7E T> N APIER P H IL I P S/ D I SC R ET E ;v J113 N - C H A N N E L S IL IC O N F I E L D - E F F E C T T R A N S IS T O R S Symmetrical silicon n-channel junction F E T s in plastic TO-92 envelopes. They are intended for