J3 DIODE Search Results

TE28F640J3C-120

Abstract: 28F64J3 28f256j3c SL894 RC28F128J3C-150 SL897 28F128j3c TE28F640J3C120 sl896 28F320J3C
Contextual Info: Intel StrataFlash Memory J3 256-Mbit J3 Family Specification Update June 2005 The 28F256J3, 28F128J3, 28F640J3, and 28F320J3 may contain design defects or errors known as errata that may cause the product to deviate from published specifications. Current

DP5Z1MM8NKH3

Abstract: 00FIH
Contextual Info: 1Mx8, 120 - 200ns, STACK/PGA 30A189-01 A 8 Megabit FLASH EEPROM DP5Z1MM8NKY/I3/H3/J3/DP5Z1MX8NKA3 PRELIMINARY DESCRIPTION: The DP5Z1MM8NKY/I3/H3/J3/DP5Z1MX8NKA3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’

DP5Z1MM16PH3

Abstract: DP5Z1MM16PI3 DP5Z1MM16PJ3 DP5Z1MM16PY DP5Z1MW16PA3
Contextual Info: 1Mx16, 120 - 200ns, STACK/PGA 30A162-21 A 16 Megabit FLASH EEPROM DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 PRELIMINARY DESCRIPTION: The DP5Z1MM16PY/I3/H3/J3/DP5Z1MW16PA3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’

100C1296

Contextual Info: F E AT U R E S MODEL NO. 100C1296 1 5 - 1 00 0 MHz High Isolation +40 dBm 3rd Order Intercept Non-Reflective CMOS Driver SMA Connectors SP6T High Isolation PIN Diode SP6T PART IDENTIFICATION 4.00 ± .03 3.836 0.8 J1 J2 J3 J4 J5 J6 .60 0.8 J1 1.586 J2 J3 J4

100C1286

Abstract: 836 DIODE
Contextual Info: F E AT U R E S MODEL NO. 100C1286 20 - 6 0 0 MHz High Isolation +40 dBm 3rd Order Intercept Non-Reflective TTL Driver SMA Connectors SP6T High Isolation PIN Diode SP6T PART IDENTIFICATION 4.00 ± .03 3.836 0.8 J1 J2 J3 J4 J5 J6 .60 0.8 J1 1.586 J2 J3 J4 J5

Contextual Info: F E AT U R E S MODEL NO. 100C12 95 15 - 1000 MHz 2.4 mA, +15 VDC High Isolation +38 dBm 3rd Order Intercept Non-Reflective CMOS Driver SMA Connectors SP5T High Isolation PIN Diode SP5T J1 J2 J3 J4 J5 3.50 ± 0.3 .08 .08 3.336 J1 J2 .093 DIA Thru 4 Holes J3

100C15

Abstract: J3 diode
Contextual Info: F E AT U R E S MODEL NO. 100C15 9 8 2 - 3 2 MHz 0.1 dB Insertion Loss 500 Watts CW TTL Driver Type N Connectors SP2T 3.00 ± .03 High Power PIN Diode SP2T CONNECTOR TYPE N, 3 PLACES J2 PART IDENTIFICATION J3 J1 1.687 .687 .25 J1 J3 • • J2 3.00 ± .03 2.500

Contextual Info: F E AT U R E S MODEL NO. 100C10 32 1 0 0 - 1 4 0 0 MHz 0.5 dB Insertion Loss 20 Watts CW TTL Driver SMA, BNC or TNC Connectors SP2T Medium Power PIN Diode SP2T 1.00±.03 2.75±.03 PART IDENTIFICATION 2.250 . 25 .50 J1 J3 J2 1.75 .06 . 25 J3 +5V CONT 1.250

1117 S Transistor

Abstract: TOSHIBA bat Transistor b 1117
Contextual Info: TOSHIBA TENTATIVE GT5J311,GT5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR G T5 J3 1 1 , SILICON N CHANNEL IGBT G T 5 J3 1 1 (S M ) Unit in mm HIGH POWER SWITCHING APPLICATIONS GT5J311 MOTOR CONTROL APPLICATIONS 10.3 MAX The 3rd Generation Enhancement-Mode

100C1032

Abstract: BNC T connectors INSERTION LOSS 100C10
Contextual Info: F E AT U R E S MODEL NO. 100C10 3 2 1 0 0 - 14 0 0 MHz 0.5 dB Insertion Loss 20 Watts CW TTL Driver SMA, BNC or TNC Connectors SP2T Medium Power PIN Diode SP2T 1.00±.03 2.75±.03 PART IDENTIFICATION 2.250 . 25 .50 J1 J3 J2 1.75 .06 . 25 J3 +5V CONT 1.250

GT10J312

Abstract: CP20A
Contextual Info: GT10J312,GT10J312 SM TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 1 0 J3 1 2 , G T 1 0 J3 1 2 ( S M ) Unit in mm HIGH POWER SWITCHING APPLICATIONS GT10J312 MOTOR CONTROL APPLICATIONS 1.32 The 3rd Generation Enhancement-Mode

100C15

Contextual Info: F E AT U R E S MODEL NO. 100C15 9 2 2 0 - 5 00 MHz 0.4 dB Insertion Loss 20 Watts CW TTL Driver SMA Connectors SP2T .19 .25 .375 Medium Power PIN Diode SP2T .156 DIA THRU 4 HOLES 2.500 +5V CONT J2 J3 -V GND 2.00 2.375 ± .03 2.75 ± .03 J1 J1 J3 • • J2

30A18

Contextual Info: 8 Megabit FLASH EEPROM D EN SE-PA C DP5Z1MM8NKY/Í3/H3/J3/DP5Z1MX8NKA3 M I C K OS V S T \í M S PRELIM INARY D E SC R IP T IO N : The D P5Z1MM8NKY/Í3/H3/J3/DP5Z1MX8NKA3 "S L C C " devices are a revolutionary new memory subsystem using Dense-Pac Microsystems'

Contextual Info: FEATURES • dc -150 MODEL NO. 100C0285 mhz tC ■ 0.35 dB Insertion Loss ■ 100 dB Isolation SP3T SP3T RELAY ■ Non-Reflective ■ SMA Connectors SOLDER TERMINAL -B 6 PLCS -1, 2 (5 PLCS) _ o)J3 3 5004 © J2 @J 2001 J2 J1 .37 TYP J3 .75 1 .03 50 FAILSAFE (J1 - J4)

Contextual Info: SDS20D Semiconductor Switching Diode HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection y Fast switching diode in case SOD-323 y For general purpose switching application 1 Ordering Information Device 2 Marking Code 1 Package J3 □ SDS20D 1. Anode

Contextual Info: OVAL SOLID STATE LAMP Part Number: WP5603SYDL/SD/J3 PRELIMINARY SPEC Super Bright Yellow Features Description zOutstanding material efficiency. The Super Bright Yellow device is based on light emitting zReliable and rugged. diode chip made from AlGaInP. zRoHS compliant.

Contextual Info: 3.5x2.8mm SURFACE MOUNT LED LAMP Part Number: AA3528SYS/J3 Super Bright Yellow Features Description z Single color. The Super Bright Yellow device is based on light emitting z Suitable for all SMT assembly and solder process. diode chip made from AlGaInP.

Contextual Info: OVAL SOLID STATE LAMP Part Number: WP5603SYDL/SD/J3 Super Bright Yellow Features Description z Outstanding material efficiency. The Super Bright Yellow device is based on light emitting z Reliable and rugged. diode chip made from AlGaInP. z RoHS compliant.

Contextual Info: OVAL SOLID STATE LAMP Part Number: WP5603SIDL/SD/J3 Hyper Red Features Description  Outstanding material efficiency. The Hyper Red device is based on light emitting diode chip  Reliable and rugged. made from AlGaInP.  RoHS compliant. Package Dimensions

Contextual Info: 3.5x2.8mm SURFACE MOUNT LED LAMP Part Number: AA3528SYSK/J3 Super Bright Yellow Features Description z Single color. The Super Bright Yellow device is based on light emitting z Suitable for all SMT assembly and solder process. diode chip made from AlGaInP.

Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: APT2012SYCK/J3-PRV Super Bright Yellow Features Description z 2.0mm x1.25mm SMT LED,0.75mm thickness. The Super Bright Yellow device is based on light emitting z Low power consumption. diode chip made from AlGaInP.

Contextual Info: T-1 3mm SOLID STATE LAMP PRELIMINARY SPEC Part Number: WP7104SEC/J3 Hyper Red Features Description zLow power consumption. The Hyper Red device is based on light emitting diode chip zPopular T-1 diameter package. made from AlGaInP. zGeneral purpose leads.

Contextual Info: OVAL SOLID STATE LAMP Part Number: L-5603SIDL/SD-J3 Hyper Red Features Description z Outstanding material efficiency. The Hyper Red device is based on light emitting diode chip z Reliable and rugged. made from AlGaInP. z RoHS compliant. Package Dimensions

Contextual Info: 3.1x1.4mm SURFACE MOUNT LED LAMP Part Number: AA3114SES/J3 Hyper Red Features Description z 3.1mm x 1.4mm, 1.2mm high, only minimum space required. The Hyper Red device is based on light emitting diode chip z Suitable for compact optoelectronic applications.