JAN201 Search Results

SPC10501A01

Abstract: iec61000-4-2 IEC-61000-4-2
Contextual Info: Products News No.: HR3TGF10006A01 Date: Jan2010 ESD Suppressor; RECTANGULAR TYPE / SPC10 Series SPC SERIES Features ESD Protection Device Low capacitance 0.1pF Max. Suitable for ESD protection of High Speed data lines. High ESD Withstand *IEC61000-4-2 8kV Contact Discharge

HSPC16701B

Abstract: IEC61000-4-2 15KV IEC-61000-4-2
Contextual Info: Products News No.: HR3TGF12012A01 Date: Jan2012 HSPC16 Series ESD Suppressor/High ESD Withstand 15kV ; RECTANGULAR TYPE HSPC SERIES Features High ESD protection performance(15kV) for automotive (Tight ESD spec requirement) IEC61000-4-2 Air Discharge: ±15kV

KBP308G

Abstract: KBP310G JAN201
Contextual Info: KBP304G~KBP310G GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE – 400 to 1000 Volts FORWARD CURRENT – 3.0 Ampere FEATURES KBP • Rating to 1000V PRV • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique

kbp208gl

Abstract: KBP206GL
Contextual Info: KBP204GL~KBP210GL GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE – 400 to 1000 Volts FORWARD CURRENT – 4.0 Ampere FEATURES KBP • Rating to 1000V PRV • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic KBP

Contextual Info: Ordering number : ENN7500 2SJ650 2SJ650 P-Channl Silicon MOSFET DC / DC Converter Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2063A [2SJ650] 4.5 2.8 5.6 18.1 16.0 3.2 3.5 7.2 10.0 2.4

Contextual Info: MCH3315 Ordering number : ENN8030 P-Channel Silicon MOSFET MCH3315 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage

Contextual Info: SVC203C Ordering number : EN2195H Diffused Junction Type Silicon Diode SVC203C Varactor Diode for FM Low-Voltage Electronic Tuning Use Features • • • Dual type with a good linearity of C-V characteristic. Excels in large input characteristics. Small-sized package CP usable in ultrasmall-sized sets (surface mount type).

Contextual Info: Ordering number : ENN7509 30A01C 30A01C PNP Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency power amplifier, muting circuit. unit : mm 2018B Features • • 0.4 0.5 •

Contextual Info: 2SA1415 / 2SC3645 Ordering number : EN1720B PNP / NPN Epitaxial Planar Silicon Transistors 2SA1415 / 2SC3645 High-Voltage Switching, Predriver Applications Features • • • • • Adoption of FBET process. High breakdown voltage VCEO=160V . Excellent linearity of hFE and small Cob.

2sc4423

Contextual Info: Ordering number : ENN2854 NPN Triple Diffused Planar Silicon Transistor 2SC4423 400V/12A Switching Regulator Applications Features Package Dimensions • High breakdown voltage, high reliability. · Fast switching speed tf : 0.1 s typ . · Wide ASO. · Adoption of MBIT process.

Contextual Info: FW232A Ordering number : ENN8361 N-Channel Silicon MOSFET FW232A General-Purpose Switching Device Applications Features • • 2.5V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage

Contextual Info: VEC2611 VEC2611 Ordering number : ENA0425 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The VEC2611 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance, thereby enabling high-density mounting.

Contextual Info: Ordering number : ENN3511A 2SA1785 : PNP Epitaxial Planar Silicon Transistor 2SC4645 : NPN Triple Diffused Planar Silicon Transistor 2SA1785/2SC4645 High Voltage Driver Applications Features Package Dimensions • Large current capacity IC=1A . · High breakdown voltage (VCEO≥400V).

Contextual Info: CPH5513 CPH5513 Ordering number : EN7311A Silicon Epitaxial Type Pin Diode for VHF, UHF, AGC Applications Features • • • Small interterminal capacitance C=0.23pF typ . Small forward series resistance (rs=2.5Ω typ). Composite type with 2 diodes contained in a CPH package currently in use, improving the mounting efficiency greatly.

Contextual Info: MCH3421 MCH3421 Ordering number : ENN7997 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage

Contextual Info: SVC707 SVC707 Ordering number : ENA0158 Silicon Diffused Junction Type FM Receiver Electronic Tuning Applications Features • • High capacitance ratio. Low voltage drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings

Contextual Info: Ordering number : ENN501I SVC201SPA Diffused Junction Type Silicon Diode SVC201SPA Varactor Diode IOCAP for FM Receiver Electronic Tuning Features Package Dimensions unit : mm 1184 [SVC201SPA] 2.2 3.0 4.0 1.8 0.4 0.5 15.0 The SVC201SPA, 201Y are varactor diodes of

Contextual Info: 3LN04CH Ordering number : ENA1193 N-Channel Silicon MOSFET 3LN04CH General-Purpose Switching Device Applications Features • 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current DC

Contextual Info: MCH3316 Ordering number : ENN8019 P-Channel Silicon MOSFET MCH3316 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage

Contextual Info: MCH3322 MCH3322 Ordering number : ENN7994 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage

Contextual Info: MCH3427 MCH3427 Ordering number : ENN7746 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage

Contextual Info: Ordering number : ENN2973 2SA1699 PNP Epitaxial Planar Silicon Transistors High-Voltage Driver Applications Features Package Dimensions • High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. unit:mm 2003B [2SA1699] 5.0 4.0 5.0

1N78

Abstract: tangential AEY29 Germanium Power Diodes Microwave detector diodes AEY29R JAN201 K1007
Contextual Info: M IC R O W A V E D ET EC TO R D IO D ES A EY 2 9 A EY 2 9 R G e rm an iu m bonded b a c k w a rd d io d e s p r i m a r il y in te n d e d f o r low le v e l d e te c ­ t o r a p p lic a tio n s a tJ - b a n d K u b a n d . T h e AEY29 an d A EY 29R a r e p ackaged

sot-363 2L

Abstract: MARKING CODE 2l MARKING CODE 2l SOT363
Contextual Info: MMDT5401 PNP/PNP Multi-Chip Transistor FEATURES • Ideal for Medium Power Amplification and Switching • Complementary NPN Type Available MMDT 5551 MECHANICAL DATA • Case: SOT-363 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI)