JANS Search Results

1N6642UB

Contextual Info: Silicon Switching Diode Series 1N6642UB Features • JAN, JANTX, JANTXV and JANS qualification is available per MIL-PRF-19500/578. See part nomenclature for all available options. • Surface mount equivalent of popular JEDEC registered 1N6642 number. •

DIODE 1N1206A

Abstract: 1n1124r 1N1124A 1N1126A 1N1128A 1N1202A 1N1204A 1N1206A 1N3649 1N3671A
Contextual Info: INCH-POUND MIL-PRF-19500/260F 10 December 1999 SUPERSEDING MIL-PRF-19500/260E 6 August 1999 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A AND AR VERSIONS JAN, JANTX, JANTXV, JANS, JANHC AND JANKC

2N5004

Abstract: 2N5002
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/534 DEVICES LEVELS 2N5002 2N5004 JAN JANTX JANTXV JANS

2N7268

Abstract: IRHM7150 IRHM8150 h206 h208 IRHM7150U
Contextual Info: Data Sheet No. PD-9.675A INTERNATIONAL RECTIFIER l I O R REPETITIVE AVALANCHE AND dv/dt RATED IRHM7150 IRHM8150 HEXFET TRANSISTORS N-CHANNEL SN7868 JANSRSN7S68 JANSHSN7S68 MEGA RAD HARD 100 Volt, 0.065Q, MEGA RAD HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology HEXFETs

1N4614UR-1

Abstract: 1N4627UR-1 CDLL4614 CDLL4615 CDLL4616 CDLL4617 CDLL4618 CDLL4619 CDLL4620 CDLL4627
Contextual Info: • 1N4614UR-1 THRU 1N4627UR-1 AVAILABLE IN JAN. JANTX. JANTXV AND JANS • LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW CURRENT OPERATION AT 250 1N4614UR-1 thru 1N4627UR-1 A and • DOUBLE PLUG CONSTRUCTION

hxo 36

Abstract: 1N4099UR-1 1N4135UR-1 CDLL4099 CDLL4100 CDLL4101 CDLL4102 CDLL4103 CDLL4104 CDLL4105
Contextual Info: • 1N4099UR-1 THRU 1N4135UR-1 AVAILABLE IN JAN, JANTX. JANTXV AND JANS 1N4099UR-1 thru 1N4135UR-1 and • LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • LOW CURRENT OPERATION AT 250 //A CDLL4099 thru CDLL4135

1N5614

Contextual Info: 1N5614/US thru 1N5622/US Standard STANDARD RECOVERY RECTIFIERS TECHNICAL DATA AV AI L AB L E AS DATA SHEET 874, REV. C.3 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT *

1N4570A JANTX

Abstract: 1N4572A JANTX 100-C 1N4565 1N4565A 1N4565A-1 1N4566 1N4566A 1N4567 1N4567A
Contextual Info: JAN, JANTX, JANTXV AND JANS • 1N4565ATHRU 1N4584A AVAILABLE IN JAN, JANTX AND JANTXV • 1N4565A-1 THRU 1N4584A-1 AVAILABLE IN • 6.4 VOLT NOMINAL ZENER VOLTAGE + 5% 1N4565 thru 1N4584A and 1N4565A-1 thru 1N4584A-1 •TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

n530

Abstract: 1N5314 1N5283 1N5297-1 1N52B 1N530b 1N5283-1 1N5284 1N5285 1N5286
Contextual Info: • 1N5283-1 THRU 1N5314-1 AVAILABLE IN JAN. JANTX. JANTXV AND JANS 1N5283 thru 1N5314 and • CURRENT REGULATOR DIODES 1N5283-1 thru 1N5314-1 • CONSTANT CURRENT OVER WIDE VOLTAGE RANGE • HIGH SOURCE IMPEDANCE • METALLURGICALLY BONDED -1 . DOUBLE PLUG CONSTRUCTION

L02A20

Abstract: 1N6677UR 1N6677UR-1 2A20 2A30 5A30 CDLL6675 CDLL6676 CDLL6677
Contextual Info: • 1N6677UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS • 0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED •LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED -1 • DOUBLE PLUG CONSTRUCTION 1N6677UR-1 and CDLL6675 thru CDLL6677

2N3811L

Abstract: 2N3811LJ 2N3811LJS 2N3811LJV 2N3811LJX
Contextual Info: • JAN level 2N3811LJ • JANTX level (2N3811LJX) 2N3811L • JANTXV level (2N3811LJV) Silicon PNP Transistor • JANS level (2N3811LJS) Data Sheet Description Applications Semicoa Corporation offers: • General purpose • Matched Dual transistors • PNP silicon transistor

IRHN9150

Abstract: IRHN93150 JANSF2N7422U JANSR2N7422U
Contextual Info: PD - 90885E IRHN9150 JANSR2N7422U 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 REF: MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN9150 100K Rads (Si) IRHN93150 300K Rads (Si) RDS(on)

Contextual Info: JANSR2N7272 Semiconductor Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 100V, rDS ON = 0.180Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

JANSR2N7422

Abstract: IRHM9150 IRHM93150 JANSF2N7422
Contextual Info: PD - 90889C IRHM9150 JANSR2N7422 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA REF: MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9150 100K Rads (Si) 0.080Ω ID -22A QPL Part Number

IRHM8450

Abstract: 2N7270 IRHM7450 JANSH2N7270 JANSR2N7270
Contextual Info: PD - 90673A IRHM7450 IRHM8450 JANSR2N7270 JANSH2N7270 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 500Volt, 0.45Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage

IRHN3054

Abstract: IRHN4054 IRHN7054 IRHN8054 JANSR2N7394U
Contextual Info: PD - 90884B IRHN7054 JANSR2N7394U 60V, N-CHANNEL REF: MIL-PRF-19500/603 RADIATION HARDENED POWER MOSFET S URFACE MOUNT SMD-1 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN7054 100K Rads (Si) IRHN3054 300K Rads (Si) IRHN4054

JANSR2N7473U2

Abstract: IRHNA57260SE
Contextual Info: PD - 91839H RADIATION HARDENED POWER MOSFET THRU-HOLE SMD-2 IRHNA57260SE JANSR2N7473U2 200V, N CHANNEL REF:MIL-PRF-19500/684 4# c TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNA57260SE 100K Rads (Si) 0.038Ω 53.5A JANSR2N7473U2

IRHM7264SE

Abstract: JANSR2N7434
Contextual Info: PD - 91393E IRHM7264SE JANSR2N7434 250V, N-CHANNEL REF: MIL-PRF-19500/661 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7264SE Radiation Level 100K Rads (Si) RDS(on) 0.11Ω ID 31A QPL Part Number

IRHNA9064

Abstract: IRHNA93064 JANSF2N7424U JANSR2N7424U
Contextual Info: PD - 91447B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA9064 JANSR2N7424U 60V, P-CHANNEL REF: MIL-PRF-19500/655 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA9064 100K Rads (Si) IRHNA93064 300K Rads (Si)

IRHNJ7330SE

Abstract: JANSR2N7465U3
Contextual Info: PD - 93829A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ7330SE JANSR2N7465U3 400V, N-CHANNEL REF: MIL-PRF-19500/676 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ7330SE 100K Rads (Si) RDS(on) ID QPL Part Number

IRHF7430SE

Abstract: JANSR2N7464T2 400V to 12V DC Regulator 500V 25A Mosfet
Contextual Info: PD - 91863C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF7430SE JANSR2N7464T2 500V, N-CHANNEL REF: MIL-PRF-19500/675 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHF7430SE Radiation Level RDS(on) 100K Rads (Si) 1.77Ω ID QPL Part Number

Contextual Info: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 4A, 250V, rDS ON = 0.700Ω The Fairchild Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings

Contextual Info: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 8A, 100V, rDS ON = 0.180Ω The Fairchild Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings

Contextual Info: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs