JANSR2N7398
Abstract: 2E12 3E12 FSL430R4 Rad Hard in Fairchild for MOSFET
Text: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N73 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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JANSR2N7398
FSL430R4
JANSR2N7398
2E12
3E12
FSL430R4
Rad Hard in Fairchild for MOSFET
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Untitled
Abstract: No abstract text available
Text: JANSR2N7398 S E M I C O N D U C T O R August 1997 Formerly Available As FSL430R4 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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JANSR2N7398
1-800-4-HARRIS
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2E12
Abstract: 3E12 FSL430R4 JANSR2N7398
Text: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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Original
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PDF
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JANSR2N7398
FSL430R4
2E12
3E12
FSL430R4
JANSR2N7398
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Untitled
Abstract: No abstract text available
Text: JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
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JANSR2N7398
FSL430R4
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E102h
Abstract: No abstract text available
Text: JANSR2N7398 S MAEESS August 1997 Formerly Available As FSL430R4 Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Features Description • 2A, 500V, ros ON = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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JANSR2N7398
1-800-4-HARRIS
E102h
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43721
Abstract: No abstract text available
Text: JANSR2N7398 EB Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description • 2A, 500V, ros O N = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSL430R4
JANSR2N7398
MIL-STD-750,
MIL-S-19500,
500ms;
43721
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500V 25A Mosfet
Abstract: Power MOSFET Selection Guide MOSFET 500V 15A n-channel 250V power mosfet 500v 2A mosfet p-channel 250V power mosfet 200v 5A mosfet rad hard Power Mosfet P-channel mosfet 500V
Text: RAD HARD MOSFET& JANS RAD HARD MOSFETs PAGE JANS Rad Hard Power MOSFET Selection Guide. 2-2 Rad Hard Data Packages - Harris Power Transistors.
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JANSR2N7272
JANSR2N7275
JANSR2N7278
JANSR2N7292
JANSR2N7294
JANSR2N7395
JANSR2N7396
JANSR2N7397
JANSR2N7398
JANSR2N7399
500V 25A Mosfet
Power MOSFET Selection Guide
MOSFET 500V 15A
n-channel 250V power mosfet
500v 2A mosfet
p-channel 250V power mosfet
200v 5A mosfet
rad hard
Power Mosfet
P-channel mosfet 500V
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