Untitled
Abstract: No abstract text available
Text: ® . . . . . Engineered solutions for the transient environment DLZ-5 thru DLZ-30CA TVS DIODE ARRAY MIL-STD-461 COMPATIBLE APPLICATIONS ● ● ● ● ● RS-232 & RS-423 Data Lines Microprocessor Based Equipment Low Frequency I/O Ports Multiple Data & Power Bus Line Protection
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DLZ-30CA
RS-232
RS-423
MIL-STD-461
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marking code vishay SILICONIX to-39
Abstract: No abstract text available
Text: 2N6660JAN/JANTX/JANTXV Vishay Siliconix JAN Qualified N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D Military Applications
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2N6660JAN/JANTX/JANTXV
18-Jul-08
marking code vishay SILICONIX to-39
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jantx2n6661
Abstract: JANTX markings on diode
Text: 2N6661JAN/JANTX/JANTXV Vishay Siliconix JAN Qualified N-Channel 90-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D Military Applications
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2N6661JAN/JANTX/JANTXV
18-Jul-08
jantx2n6661
JANTX markings on diode
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JANTX markings on diode
Abstract: 2N6659 70223
Text: 2N6660JAN/JANTX/JANTXV Vishay Siliconix JAN Qualified N-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (Ω) VGS(th) (V) ID (A) 60 3 at VGS = 10 V 0.8 to 2 0.99 TO-205AD (TO-39) BENEFITS • Guaranteed Reliability • Low Offset Voltage
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2N6660JAN/JANTX/JANTXV
O-205AD
18-Jul-08
JANTX markings on diode
2N6659
70223
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JANTX markings on diode
Abstract: and/JANTX markings on diode
Text: 2N6661JAN/JANTX/JANTXV Vishay Siliconix JAN Qualified N-Channel 90-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (Ω) VGS(th) (V) ID (A) 90 4 at VGS = 10 V 0.8 to 2 0.86 TO-205AD (TO-39) BENEFITS • Guaranteed Reliability • Low Offset Voltage
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2N6661JAN/JANTX/JANTXV
O-205AD
18-Jul-08
JANTX markings on diode
and/JANTX markings on diode
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M83421
Abstract: M83421/01 RCR Resistor RCR07 resistor RCR07 military capacitor codes M83421 RNC Resistor military capacitor codes mica M8342 military part identification marking m83421
Text: UNSIGNED HARDCOPY NOT CONTROLLED Link Simulation & Training Instruction Hardware Engineering No. LMS 11-12 Subject: Electrical Component Identification APPROVED BY Manager, Hardware Engineering STATUS Maintenance Revision PURPOSE Defines and explains the techniques used for identifying the most common
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1N36
Abstract: 1N1199A 1N1200A 1N1201A 1N1202A 1N1203A 1N1204A 1N1205A 1N1206A DO-203AA
Text: 1N1.A, 1N36.A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V RoHS • High surge capability COMPLIANT • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in
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MIL-S-19500/260
DO-203AA
18-Jul-08
1N36
1N1199A
1N1200A
1N1201A
1N1202A
1N1203A
1N1204A
1N1205A
1N1206A
DO-203AA
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UNF-2A
Abstract: 1N36
Text: 1N1.A, 1N36.A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V RoHS • High surge capability COMPLIANT • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in
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MIL-S-19500/260
DO-203AA
11-Mar-11
UNF-2A
1N36
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1N1199A
Abstract: 1N1200A 1N1201A 1N1202A 1N1203A 1N1204A 1N1205A 1N1206A 1N36 DO-203AA
Text: 1N1.A, 1N36.A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V RoHS • High surge capability COMPLIANT • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in
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MIL-S-19500/260
DO-203AA
11-Mar-11
1N1199A
1N1200A
1N1201A
1N1202A
1N1203A
1N1204A
1N1205A
1N1206A
1N36
DO-203AA
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HP 3466A
Abstract: JANTX4N54DX JANTX4N51CX 4N51 OSRAM led JANTX4N54EX vqe 14 e led display 4n54 display driver 4N53 4N54
Text: INCH-POUND MIL-PRF-19500/708 1 April 2003 SUPERSEDING MIL-D-87157/1 19 May 1983 PERFORMANCE SPECIFICATION DISPLAYS, DIODE, LIGHT EMITTING, SOLID STATE, RED, NUMERIC AND HEXADECIMAL, WITH ON BOARD DECODER/DRIVER TYPES 4N51, 4N52, 4N53 AND 4N54 JAN AND JANTX
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MIL-PRF-19500/708
MIL-D-87157/1
MIL-PRF-19500.
HP 3466A
JANTX4N54DX
JANTX4N51CX
4N51
OSRAM led
JANTX4N54EX
vqe 14 e led display
4n54 display driver
4N53
4N54
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Untitled
Abstract: No abstract text available
Text: 1N1.A, 1N36.A Series www.vishay.com Vishay Semiconductors Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 V to 1000 V • High surge capability • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in
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MIL-S-19500/260
DO-203AA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: 1N1.A, 1N36.A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V RoHS • High surge capability COMPLIANT • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in
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MIL-S-19500/260
DO-203AA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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1N36
Abstract: 1n1199
Text: 1N1.A, 1N36.A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V RoHS • High surge capability COMPLIANT • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in
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MIL-S-19500/260
DO-203AA
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
1N36
1n1199
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Untitled
Abstract: No abstract text available
Text: 1N1.A, 1N36.A Series www.vishay.com Vishay Semiconductors Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 V to 1000 V • High surge capability • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in
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MIL-S-19500/260
DO-203AA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: VS-1N1.A, VS-1N36.A Series www.vishay.com Vishay Semiconductors Medium Power Silicon Rectifier Diodes, Stud Version , 12 A FEATURES • Voltage ratings from 50 V to 1000 V • High surge capability • Low thermal impedance • High temperature rating
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VS-1N36.
MIL-S-19500/260
DO-203AA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Diode LT 228
Abstract: No abstract text available
Text: «V PROÏËK DEVICES W Æl _: , : IEngineered solutions fo r the transient environment DLZ-5 th ru DLZ-3QCA TVS DIODE AR R A/ APPLICATIONS FEATURES • • • • • • MIL-STD-461 Compatible 500 Watts Peak Pulse Power Dissipation 8/20 jis Available in 8 Voltage Types Ranging from 5.0V to 30V
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RS-232
RS-423
MIL-STD-461
Z-30A
DLZ-13C
DLZ-13CA
DLZ-19C
DLZ-19CA
DLZ-30C
Diode LT 228
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DIODE 1N649
Abstract: diode 1N645 JANTX markings on diode marking 332 1N649 JANTX 1N647 military part marking symbols jan 1N647-1 JANTX 1N647-1 1N645-1 JANS
Text: MIL SPECS I C | 0 D D 0 1 2 S 0001574 4 | T-of-cy \ NOTICE I IOF VALIDATION ! INCH-POUND MIL-S-19500/240E NOTICE 1 24 August 1988 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, TYPES 1N645, 1N647, 1N649, JAN AND JANTX; 1N645-1, 1N647-1
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MIL-S-19500/240E
1N645,
1N647,
1N649,
1N645-1,
1N647-1
1N649-1,
MIL-S-19500/240E,
1N647-1,
DIODE 1N649
diode 1N645
JANTX markings on diode
marking 332
1N649 JANTX
1N647
military part marking symbols jan
JANTX 1N647-1
1N645-1 JANS
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1N6122A JANTX
Abstract: 1N6121 1N6116A JANTX JANTX1N5626 JANTX 1N4246 JANTX 1N5811 JAN 1N5811 1N5416 JANTX JANTX 1N647-1 "general instrument 1n4946
Text: GENERAL INSTRUMENT # 1 IN PRICE, # 1 IN SERVICE, # 1 IN MILITARY General Instrument Power Semiconductor Division , is the world’s largest manufacturer of rectifiers and bridges, supplying over 2 billion annually. We’re proud to be number one in quality and reliability as we are
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1N4245
1N4246
1N4247
1N4248
1N4249
1N4942
1N4944
1N4946
1N4947
1N4948
1N6122A JANTX
1N6121
1N6116A JANTX
JANTX1N5626
JANTX 1N4246
JANTX 1N5811
JAN 1N5811
1N5416 JANTX
JANTX 1N647-1
"general instrument 1n4946
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Diode SH-1
Abstract: se666 YHLZD-33 JANTX markings on diode LZD-32 L5386 YHLZD-40 SH-1 diode RLR20C YHLZR-47
Text: ENGINEERING REQUIREMENTS: NOTES: MATERIAL: 1. INTERPRET THIS DRAWING IN ACCORDANCE WITH AN5I Y14.5M-1982. BODY: Z Y T E L N0.151L OR EQUIVALENT 5ELF-EXTINGUI5HING ASTM D 6 35-56T NYLON, MIL-P-20693 AND FUNGUS RESISTANT. 1*1 34 H e sM SECTION 2-1 2. U N LE SS OTHERWISE SPECIFIED,
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35-56T
MIL-P-20693)
OQ-B-626)
MIL-G-45204.
QQ-C-533
5M-1982.
SE66604
SE66784)
ELECTRICA2349)
Diode SH-1
se666
YHLZD-33
JANTX markings on diode
LZD-32
L5386
YHLZD-40
SH-1 diode
RLR20C
YHLZR-47
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minor project proposal on electronics
Abstract: 436 diode MIL-S-19500/436 1N5466B JANTXV diode LN 4001 1N5476B 1N5461B 1N5461C 1N5462C 1N5463C
Text: MIL SPECS IC | D D D D i a S DQiattt. 4 | MIL-S-19500/436 USAF AMENDMENT 5 9 JANUARY 1984 suPEmunra- AMENDMENT 4 13 July 1972 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-VARIABLE CAPACITOR TYPES 1N5461B THRU 1N5476B AND 1N5461C THRU 1N5476C
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GD13ttt.
MIL-S-19500/436
1N5461B
1N5476B
1N5461C
1N5476C
DDD012S
0D13bÃ
minor project proposal on electronics
436 diode
1N5466B JANTXV
diode LN 4001
1N5462C
1N5463C
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97942
Abstract: RX147 rx174 X40FG 96214 RX135 RX107 C5001049-1 RX204 581r887h01
Text: 44E » MIL SPECS 0 G 0 0 12 S 0 0 3 3 3 ^ 2 S « N I L S |The documentation and process conversion | |measures necessary to comply with this | ¡revision shall be completed by 3 0 D e c 93J IINCH-POUNDI I_ I MIL-S-19500/576A 30 June 1993 SUPERSEDING
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0D001B5
D0333TS
MIL-S-19500/576A
MIL-S-19500/576
1N6520
1N6527,
1N6520US
1N6527US
1N6526
72A0036-4
97942
RX147
rx174
X40FG
96214
RX135
RX107
C5001049-1
RX204
581r887h01
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4A2 zener diode
Abstract: 1N4569 JAN 1N4570A JANTX 1n4573 20771 1N4565A 1N4565A-1 1N4565AUR-1 Zener do35 marking code 9 a2 1N4566A
Text: MIL S P E C S 44 E ]> • 0000125 0033734 7 ■MILS The documentation and process | conversion measures necessary to | comply with this amendment shall be | completed by 2 November 1993 j - 1 |[NCH-POUND] 1- J
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MIL-S-19500/452C
MIL-S-19500/452B
1N4565A
1N4584A,
1N4565A-1
1N4584A-1,
1N4565AUR-1
1N4584AUR-1,
CA4565A)
4A2 zener diode
1N4569 JAN
1N4570A JANTX
1n4573
20771
Zener do35 marking code 9 a2
1N4566A
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4001 1n diode
Abstract: 1N4801A 1N4801B 1N4815A 1N4815B 1N4808 1N4815
Text: MIL-S-19500/329C 4 October 1983 SUPERSEDING-MIL-S-19500/329B 4 March 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE SILICON, VOLTAGE-VARIABLE CAPACITOR TYPES 1N4801A THROUGH 1N4815A AND 1N4801B THROUGH 1N4815B JAN, JANTX AND JANTXV This specification 1s approved for use by all Depart
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MIL-S-19500/329C
MIL-S-19500/329B
1N4801A
1N4815A
1N4801B
1N4815B
MIL-S-19500.
4001 1n diode
1N4808
1N4815
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ta1938
Abstract: 1N5835 RAW MATERIAL INSPECTION procedure 1N5836 MR 4011
Text: MIL-S-19500/^ 9 March 1973 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, GENERAL PURPOSE TX AND NON-TX TYPES 1N5835 and 1N5836 1. SCOPE 1.1 Scope. This specification covers the detail requirements for silicon, general purpose semiconductor diodes for use as power rectifiers in equipment
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MIL-S-19500/UQU
1N5835
1N5836
MIL-S-19500,
MIL-S-19500.
MIL-S-19500
5961-A497
ta1938
RAW MATERIAL INSPECTION procedure
1N5836
MR 4011
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