1N1199 Search Results

1N1206RA

Abstract: i2t graph 1N1199A 1N1200A 1N1201A 1N1202A 1N1203A 1N1204A 1N1205A 1N5331
Contextual Info: 1 Silicon Rectifiers 1N1195 SE E PAG E 203 1N1199A-1N1206A 1N1199RA-1N1206RA 1N3670A-1N3673A 1N5331 These diffused junction rectifiers are designed specifically to provide high perform ance fo r ap p li­ cations up to 22 am peres A verage F orw ard C u rren t in single-phase applications w ith repetitive

Contextual Info: 1N1199A thru 1N1206AR Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 12 A Features • High Surge Capability • Types up to 1000 V VRRM DO-4 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

1N119

Abstract: 1N120
Contextual Info: 1N1199B thru 1N1206B MOTOROLA MEDIUM-CURRENT SILICON RECTIFIERS M E D IU M -C U R R E N T S ILIC O N RECTIFIERS Compact, hig h ly e ffic ie n t silicon re ctifie rs fo r m e diu m -curre n t a pp licatio n s requiring: 5 0 - 6 0 0 VOLTS 12 A M PERES • High C urrent Surge —

Contextual Info: DIGITRON SEMICONDUCTORS 1N1199 A,B -1N1206(A,B) SILICON POWER RECTIFIER MAXIMUM RATINGS Symbol 1N1199 Peak reverse voltage Parameter VR 50V Operating & storage temperature range TJ, Tstg -65 to +200°C RθJC 2.5°C/W junction to case Maximum thermal resistance

INI200A

Abstract: 10-32 UNF 1N1206A 1N1199A 1N1201A 1N1202A 1N1203A 1N1204A 1N1205A
Contextual Info: EDAL INDUSTRIES INC 4SE D • aO^S?]^ 000D27S T77 H E D L FLATS PIV SEE CHART *0 12A @ Js 240 AMPS Vf 1.3 V @ Zr 3.0 mA @ @ STYLE DQ4 FOR REVERSE POLARITY USE SUFFIX R PART NUMBER 1N1199A INI200A 1N1201A 1N1202A 1N1203A 1N1204A 1N1205A 1N1206A PIV 50 100 150

IN1190A diode

Abstract: an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 IN1190 DT93-1 HFA16PB120
Contextual Info: Revised 5/11/99 www.irf.com Rectifiers / Thyristors Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series

Contextual Info: INTERNATIONAL SEMICONDUCTOR, INC. 1N1199A thru 1N1206A M EDIUM CURRENT SILICO N RECTIFIERS V O L T A G E - 50 TO 600 Volts C U R R E N T - 12 Amperes • High Surge Current - 240 Amperes at T J= 2 0 0 °C ■ Peak Performance at Elevated Temperatures - 12 Amperes at T c = 1 5 0 °C

Contextual Info: MCC Features • • • • • 1N1199A thru 1N3673A
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 12 Amp Recovery Rectifier Low Cost Low Forward Voltage Drop High Current Capability High Surge Current Capability

1N1199A

Contextual Info: MCC 1N1199A thru 1N3673A
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • • 12 Amp Recovery Rectifier Low Cost Low Forward Voltage Drop High Current Capability High Surge Current Capability

SRA255

Contextual Info: MCC 12 AMPERE I DO-4 1N1199A 1N1200A 1N1202A 1N1204A 1N1206A 1N3671A 1N3673A 50 100 200 400 600 800 1000 Package Outline Pg. A-9 12 12 12 12 12 12 12 150 150 150 150 150 150 150 240 240 240 240 240 240 240 3000 2500 2000 1500 1000 1000 1000 1.35 1.35 1.35

DIODE 1N1206

Abstract: 1N1206 1N1199 1N1202 1N1200 1N1204 1N1199A 1N1206AR
Contextual Info: 1N1199A thru 1N1206AR Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 12 A Features • High Surge Capability • Types up to 1000 V VRRM DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage

IN1206A

Contextual Info: 1N1199A R THRU 1N3673A(R) DACO SEMICONDUCTOR CO., LTD. STANDARD RECOVERY DIODES STUD TYPE 12A Features 12Amp Rectifier 50-1000 Volts High Surge Capability Types up to 1000V V RRM DO-4 B Maximum Ratings N Operating Temperature: -65 C to +200 Storage Temperature: -65 C to +200

245A-02

Abstract: 1N1206A 1N1200A 1N1202A IN1204A diode 160a motorola 1N1199A 1N1202RA 1N1204A IN1206A
Contextual Info: M O TO RO LA SC D I O D E S / O P T O b3fc.7BSS aD Ab El A 703 • HOT? b4E D 1N1199A MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 1N1206A 1N1204A is a Motorola Preferred Device MEDIUM-CURRENT SILICON RECTIFIERS M E D IU M -C U R R E N T SILICO N RECTIFIERS

6F40

Abstract: 40fr10 40HF100 1N3209 1N3768
Contextual Info: International H i Rectifier Rectifiers Standard Recovery 6-40 Amps Part Number 'F AV @ Tc VRBM (V) 6F10 6F20 6F40 6F60 6F80 6F100 6F120 12F10 12F20 12F40 12F60 12F80 12F100 12F120 1N1199A 1N1200A 1N1201A 1N1202A 1N1203A 1N1204A 1N1205A 1N1206A 1N3670A 1N3671A

JANTX1N1202A

Contextual Info: Standard Recovery Rectifiers Part Number Microscml Division Package Typo Mil Outline .1. ! Spee • 1 REC 1N3925 1N1199 1N1199A 1N1199B 1N2598 UT8105 1N1200 1N1200A 1N1200B R20410 S20410 UT8110 1N1201 1N1201A 1N1201B 1N1202 1N1202A 1N1202B 1N4506

1N1199C

Abstract: diode lt 445 1N1199
Contextual Info: 1N1199C thru 1N1206C MOTOROLA M E D IU M -C U R R E N T SILIC O N RECTIFIERS MEDIUM-CURRENT SILICON RECTIFIERS Compact, highly efficien t silicon rectifiers for m edium -current application s requiring: 50-600 V O LT S 12 A M P E R E S • High Current S u rg e —

1N1206A

Abstract: 1N3671 PBY277 PBY274 1N1199A 1N1199AR 1N1200A 1N3673 PBY271 PBY272
Contextual Info: 1N1199A . 1N1206A, 1N3671, 1N3673, PBY271 . PB277 1N1199A . 1N1206A, 1N3671, 1N3673, PBY271 . PB277 Silicon-Power-Rectifiers Silizium-Leistungs-Gleichrichter Version 2006-04-26 Nominal Current Nennstrom 7 Repetitive peak reverse voltage Periodische Spitzensperrspannung

245A-02

Abstract: 1N1199 1N1202R 1N1204 1N1206 DO-203AA IN1206
Contextual Info: MO TO RO LA SC D IO DE S / O P T O » Lj 4 E • h 3 h 7 25 5 DDflbSl? &77 « M O T ? 1N1199 MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 1N1206 1N1204 is a Motorola Preferred Device MEDIUM-CURRENT SILICON RECTIFIERS M E D IU M -C U R R EN T SILICON RECTIFIERS

1N5171

Abstract: 1n5625 piv MR1215SL 1N5172 1N5198 1N5199 1N5201 1N5173 1M3886 1N3768
Contextual Info: o o GENERAL PURPOSE RECTIFIERS ADC CASE 1A 2A A 5us C 5us C 5us 1N5170: 1NS171 1N5172 D 5us 1N5197 1N4517 1N5199 1N5624 1N5550 SPD546A 1N4245 1N5614 1N5059 12A 35A 100A DO-4 5us 1N1199A DO-5 5us 1N1183 G 5us 1N1124A 1N1200A 1N1201A 1N1202A 1N1184 1N1185 1N1186

DIODE 1N1206A

Contextual Info: 1N1199A thru 1N1206AR Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 12 A Features • High Surge Capability • Types up to 1000 V VRRM DO-4 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

SCR gate drive circuit

Abstract: an 80771 IN1190 IN1190A IN1190A diode 20509 Diode 31DQ HFA25TB60 SD400N IR 31DQ 03
Contextual Info: Revised 8/27/98 www.irf.com Rectifiers / Thyristors Catalog of Availble Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series

MIL-S-19500

Abstract: 1N93A 2N78A 1N4148 JANTX 1N1206A JANTX 1N3713 1N4532 1N4148 JAN IN1614 1N1184
Contextual Info: SILICON RECTIFIERS MEDIUM CURRENT 5 TO 12 AM PERES 1N1612-16 1N1341A-48A 1N3987-90 JEDEC — GE T Y P E S — 1N3879-83 — 1N1199A-1206A 1M3670A-73A 1N3889-93 1N5331 1N4510-11 A28F-D A129E-PB 12 12 12 12 100 135 65 135 — — E LE C T R IC A L S P E C IFIC A T IO N S

Contextual Info: 1N1199A thru 1N1206AR Silicon Standard Recovery Diode VRRM = 50 V - 600 V IF = 12 A Features • High Surge Capability • Types from 50 V to 600 V VRRM DO-4 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.

1N1199B

Abstract: 245A-02 1204B 1206B 1N1202RB 1N1204B 1N1206B DO-203AA
Contextual Info: MOTOROLA SC DIODES/OPTO b3b72S5 DGflbSn b4T « H O T ? bME D 1N1199B MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 1N1206B 1N1204B 1« a Motorola Preferred Device MEDIUM-CURRENT SILICON RECTIFIERS MEDIUM-CURRENT SILICON RECTIFIERS Compact, highly efficient silicon rectifiers for medium-current