JANUARY1998 Search Results

SLMA002

Abstract: TPA301 TPA301D TPA301DGN TPA301DR
Contextual Info: TPA301 350-mW MONO AUDIO POWER AMPLIFIER SLOS208D – JANUARY1998 – REVISED APRIL 2003 D Fully Specified for 3.3-V and 5-V Operation D Wide Power Supply Compatibility D OR DGN PACKAGE TOP VIEW 2.5 V – 5.5 V Output Power for RL = 8 Ω – 350 mW at VDD = 5 V, BTL

TPA301

Contextual Info: TPA301 350-mW MONO AUDIO POWER AMPLIFIER SLOS208B – JANUARY1998 – REVISED MARCH 2000 D D Fully Specified for 3.3-V and 5-V Operation Wide Power Supply Compatibility 2.5 V – 5.5 V Output Power for RL = 8 Ω – 350 mW at VDD = 5 V, BTL – 250 mW at VDD = 3.3 V, BTL

TPA301

Abstract: 2000 watts audio amplifier schematics Audio Power Amplifier Series High-Performance 200 watt audio amplifier MO-187 SLMA002 TPA301D TPA301DGN TPA301DR
Contextual Info: TPA301 350-mW MONO AUDIO POWER AMPLIFIER SLOS208C – JANUARY1998 – REVISED MARCH 2000 D D D OR DGN PACKAGE TOP VIEW Fully Specified for 3.3-V and 5-V Operation Wide Power Supply Compatibility 2.5 V – 5.5 V Output Power for RL = 8 Ω – 350 mW at VDD = 5 V, BTL

power amplifier circuit diagram with pcb layout

Abstract: TPA301 Audio Power Amplifier Series High-Performance 150 watts power amplifier layout 200 watt audio amplifier 800 watt audio amplifier power transistor audio amplifier 500 watts MO-187 SLMA002 TPA301D
Contextual Info: TPA301 350-mW LOW-VOLTAGE AUDIO POWER AMPLIFIER SLOS208B – JANUARY1998 – REVISED OCTOBER 1998 D D Fully Specified for 3.3-V and 5-V Operation Wide Power Supply Compatibility 2 V – 5.5 V Output Power for RL = 8 Ω – 350 mW at VDD = 5 V, BTL – 250 mW at VDD = 3.3 V, BTL

Contextual Info: SGT10S10, 1 HARRIS S E M I C O N D U C T O R January1998 Gate Controlled Unidirectional Transient Surge Suppressors Features Description • Blocking Voltage 100V and 270V Surgector transient surge protectors are designed to protect telecommunication equipment, data links, alarm systems,

Contextual Info: SN54LVC646A, SN74LVC646A OCTAL BUS TRANSCEIVERS AND REGISTERS WITH 3-STATE OUTPUTS SCAS302F-JANUARY 1993-REVISED JANUARY1998 EPIC Enhanced-Performance Implanted CMOS Submicron Process SN74LVC646A . . . DB, DW, OR PW PACKAGE (TOP VIEW ) Typical V q l p (Output Ground Bounce)

TPA301

Abstract: 500 watts audio amplifier diagram 150 watts power amplifier layout MO-187 SLMA002 TPA301D TPA301DGN TPA301DR
Contextual Info: TPA301 350-mW MONO AUDIO POWER AMPLIFIER SLOS208C – JANUARY1998 – REVISED MARCH 2000 D D D OR DGN PACKAGE TOP VIEW Fully Specified for 3.3-V and 5-V Operation Wide Power Supply Compatibility 2.5 V – 5.5 V Output Power for RL = 8 Ω – 350 mW at VDD = 5 V, BTL

Contextual Info: MOSEL VITELIC V 4 3642 R 02V T G 3 .3 VO LT 2 M x 6 4 H IG H P E R F O R M A N C E U N B U F F E R E D D IM M S D R A M M O D U L E P R E L IM IN A R Y Features Description • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line SDRAM Module ■ 2 banks 2M x 64 bit organization

70914S

Contextual Info: HIGH-SPEED 36K 4K x 9 SYNCHRONOUS DUAL-PORT RAM Integrated Device Technology, Inc. FEATURES: • H igh-speed clock-to-data output tim es — M ilitary: 20/25ns (max.) — C om m ercial: 12/15/20ns (max.) • Low -power operation — IDT70914S Active: 800 mW (typ.)

Contextual Info: TISP5070H3BJ, TISF5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS JANUARY 1998-REVISED SEPTEMBER 1998 TELECOMMUNICATION SYSTEM HIGH CURRENT OVERVOLTAGE PROTECTORS

Contextual Info: STW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STW34NB20 200 V < 0.075 Ω 34 A ) s ( ct FEATURES SUMMARY • TYPICAL RDS(on) = 0.062 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY

D20NE06

Abstract: D20NE STD20NE06T4
Contextual Info: STD20NE06 N-CHANNEL 60V - 0.032 Ω - 20A DPAK "SINGLE FEATURE SIZE " POWER MOSFET Table 1. General Features Figure 1. Package Type VDSS RDS on ID STD20NE06 60 V < 0.040 Ω 20 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.032 Ω ■ EXCEPTIONAL dv/dt CAPABILITY

PDSO-G8

Contextual Info: TISPL758LF3D INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES JANUARY 1998 - REVISED OCTOBER 1998 OVERVOLTAGE PROTECTION FOR LUCENT TECHNOLOGIES LCAS Symmetrical and Asymmetrical

TPA301

Contextual Info: TPA301 350-mW LOW-VOLTAGE AUDIO POWER AMPLIFIER SLQ S 208 - JA N U A R Y 1998 • Fully Specified fo r 3.3-V and 5-V Operation • Wide Power Supply C om patibility 2 V - 5.5 V • O utput Power fo r R|_ = 8 Q - 350 mW at VDD = 5 V, BTL - 250 mW at VDD = 3.3 V, BTL

D20NE

Abstract: d20ne06 STD20NE06 STD20NE06T4
Contextual Info: STD20NE06 N-CHANNEL 60V - 0.032 Ω - 20A DPAK "SINGLE FEATURE SIZE " POWER MOSFET Table 1. General Features Figure 1. Package Type VDSS RDS on ID STD20NE06 60 V < 0.040 Ω 20 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.032 Ω ■ EXCEPTIONAL dv/dt CAPABILITY

P55NE06

Abstract: P55NE P55NE06FP STP55NE06FP p55ne0 aval morocco P55NE06 schematic diagram dc-dc stp55ne06 Part Marking TO-220 STMicroelectronics
Contextual Info: STP55NE06 STP55NE06FP N-CHANNEL 60V - 0.019 Ω - 55A TO-220/TO-220FP "SINGLE FEATURE SIZE " POWER MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STP55NE06 60 V < 0.022 Ω 55 A STP55NE06FP 60 V < 0.022 Ω 30 A FEATURES SUMMARY

IDT70914

Abstract: IDT70914S pn80 70914S25 70914S
Contextual Info: HIGH-SPEED 36K 4K x 9 SYNCHRONOUS DUAL-PORT RAM PRELIMINARY IDT70914S Integrated Device Technology, Inc. FEATURES: • High-speed clock-to-data output times — Military: 20/25ns (max.) — Commercial: 12/15/20ns (max.) • Low-power operation — IDT70914S

Contextual Info: TMS28F200BZT, TMS28F200BZB 262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES SMJS200E - JUNE 1994 - REVISED JANUARY 1998 Organization. 262144 by 8 bits 131072 by 16 bits Array-Blocking Architecture - Two 8K-Byte Parameter Blocks - One 96K-Byte Main Block

Contextual Info: STW38NB20 N-CHANNEL 200V - 0.052 Ω - 38A TO-247 PowerMESH MOSFET PRELIMINARY DATA Figure 1. Package Table 1. General Features Type VDSS RDS on ID STW38NB20 200 V < 0.065 Ω 38 A ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s (

Contextual Info: STW34NB20 N-CHANNEL 200V - 0.062  - 34A TO-247 PowerMESH MOSFET Table 1. General Features Figure 1. Package Type VDSS RDS on ID STW34NB20 200 V < 0.075  34 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.062  ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED

W34NB20

Abstract: STW34NB20
Contextual Info: STW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STW34NB20 200 V < 0.075 Ω 34 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.062 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■

W38NB20

Abstract: STW38NB20 JANUARY1998
Contextual Info: STW38NB20 N-CHANNEL 200V - 0.052 Ω - 38A TO-247 PowerMESH MOSFET PRELIMINARY DATA Figure 1. Package Table 1. General Features Type VDSS RDS on ID STW38NB20 200 V < 0.065 Ω 38 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.052 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY

P55NE

Abstract: p55ne0 P55NE06 P55NE06FP STP55NE06 P55n STP55NE06FP C3921 stp55ne
Contextual Info: STP55NE06 STP55NE06FP N-CHANNEL 60V - 0.019 Ω - 55A TO-220/TO-220FP "SINGLE FEATURE SIZE " POWER MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS on ID STP55NE06 60 V < 0.022 Ω 55 A STP55NE06FP 60 V < 0.022 Ω 30 A FEATURES SUMMARY