JIANGSU Search Results

2SC3243

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC3243 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM: 0.9 W (Tamb=25℃) 3. BASE Collector current 1 A ICM: Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SD1899 TRANSISTOR NPN TO – 252 FEATURES z Low VCE(sat) z High Transition Frequency 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SC2236

Abstract: transistor 2sC2236 2SA966
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SC2236 TRANSISTOR NPN 1. EMITTER FEATURE 2. COLLECTOR Complementary to 2SA966 and 3 Watts output Applications. 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

bc639

Abstract: BC635 BC637 transistor bc635 bc635 datasheet transistor BC639 BC639-16 BC639-10 transistor 639
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 BC635/637/639 Plastic-Encapsulate Transistors TRANSISTOR NPN TO-92 FEATURES High current transistors 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

3CA1837

Abstract: 3DA4793
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F 3DA4793 Plastic-Encapsulate Transistors TO-220F TRANSISTOR NPN FEATURES z Complementary to 3CA1837 z Collector Power Dissipation PCM : 2W (Tamb=25℃) 20 W (Tcase=25℃) 1. BASE 2. COLLECTOR 3. EMITTE

MBR10100CT

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Diodes MBR10100CT TO-220 SCHOTTKY BARRIER RECTIFIER 1. ANODE FEATURES • Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency

2SD2470

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S 2SD2470 TRANSISTOR Plastic-Encapsulate Transistors TO-92S NPN 1. EMITTER FEATURES z Low saturation voltage 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 3. BASE Value

s9013 transistor

Abstract: J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SA940

Abstract: 2SC2703
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SA940 TRANSISTOR PNP TO-220 1. BASE FEATURES z Wide safe Operating Area. z Complementary to 2SC2703 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

transistor 649A

Abstract: 649A transistor 2sb649 2SB649 2SB649A TO 126 FEATURES JIANGSU CHANGJIANG TO-126
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126 FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SB1197K

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SB1197K TRANSISTOR PNP Unit : mm 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Power amplifier z MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter

TRANSISTOR bd436

Abstract: BD436 BD434
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD434,436 TRANSISTOR PNP TO-126 FEATURES Amplifier and switching applications 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter

br b772

Abstract: TRANSISTOR b772 B772 TRANSISTOR br b772 b772 transistor B772 datasheet B772 equivalent B772 PNP transistors b772 b772 to 126
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-126 FEATURES •Low speed switching 1. EMITTER 2.COLLECTOR 3.BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

bt136 triac

Abstract: TRIAC bt136 Thyristor BT136 BT136 BT136 motor equivalent for TRIAC BT136 bt136triac Thyristor to220 triac to-220
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Thyristor BT136 TRIAC TO-220 MAIN FEATURES Symbol value IT RMS 6 VDRM/VRRM 600 and 800 ITSM 25 1. ANODE unit A V A 2. ANODE 3. GATE 123 GENERAL DESCRIPTION . Glass passivated triacs in a plastic envelope ,

DIODE A7

Abstract: A7 diode marking A7 diode free diode marking a7 a7 surface mount diode A7 marking diode
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate DIODE DK4448CLLD03 - WBFBP-03D SWITCHING DIODE TOP 1.0x1.0×0.5 unit: mm DESCRIPTION Epitaxial planar Silicon diode + - 1. ANODE 2. ANODE 3. CATHODE FEATURES Fast Switching Speed

transistor equivalent book

Abstract: transistor ic equivalent book TSA114ENND03 marking 14
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSA114ENND03 TRANSISTOR WBFBP-03B 1.2x1.2×0.5 unit: mm DESCRIPTION PNP Digital Transistor TOP I FEATURES 1) Built-in bias resistors enable the configuration of an

SOT523

Abstract: SOT-523
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diode BZX84C2V4T-BZX84C39T ZENER DIODE FEATURES： ∙ 150mW power dissipation rating. Maximum Ratings @TA=25℃ unless otherwise specified SOT-523 Electrical Characteristics @ TA= 25°C unless otherwise specified

1220A TRANSISTOR

Abstract: KSA1220 equivalent transistor KSC2690A KSA1220A ksc2690
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors KSA1220/1220A TRANSISTOR PNP TO-126 FEATURES • Audio frequency power amplifier · High frequency power amplifier · Complement to KSC2690/KSC2690A 1. EMITTER 2. COLLECTOR

2SA934

Abstract: 2SA934 transistor 2sc2060
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SC2060 TRANSISTOR NPN 1. EMITTER FEATURE 2. COLLECTOR z Power dissipation PCM: 0.75 W (Tamb=25℃) z Low saturation voltage (VCE(sat)=0.15V at 500mA) z Complementary pair with 2SA934

SOT R23

Abstract: marking R24 2SC3356 SOT R25 r25 q
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR

2SC2412

Abstract: marking FQ 2SA1037 transistor marking fq
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1037 SOT-23 TRANSISTOR PNP FEATURES ∙ Excellent hFE linearity. ∙ Complments the 2SC2412 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

transistor S9014

Abstract: s9014 s9014 equivalent transistor -s9014 s9014 transistor transistor TO-92 S9015 S9014 TO92 S9015
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9014 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z High total power dissipation.(PC=0.45W) z High hFE and good linearity z Complementary to S9015 2. BASE 3. COLLECTOR

transistor 2n3904

Abstract: transistor 2N3906 2N3906 TRANSISTOR 2N3906 2N3906 PNP transistor 2n3906 TRANSISTOR pnp 2n3906 PNP transistor DC current gain PNP switching transistor 2N3906 mhz 2n3906 equivalent transistor 2N3904
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR PNP TO-92 FEATURE z PNP silicon epitaxial planar transistor for switching and Amplifier applications z As complementary type, the NPN transistor 2N3904 is

SD106WS

Abstract: marking TC SOD-323
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD106WS FAST SCHOTTKY DIODES SOD-323 + FEATURES • Low turn-on voltage • Fast switching • Microminiature plastic package • This device is protected by a PN junction guard ring